OKI KGF1146 Datasheet
E2Q0011-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1146¡ electronic components
¡ electronic components
KGF1146
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current operation, high output power, and high isolation. The KGF1146 specifications are guaranteed to a fixed
matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required.
Because of the high isolation, the KGF1146 is an ideal part for a VCO-buffer amplifiers and an
intermediate-stage amplifier for personal handy phones, such as cellular phones.
FEATURES
• Low current operation: 2.5 mA (max.)
• High output power: 1.5 dBm (min.)
• High isolation: –40 dB
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
+0.1
0.6
–0.05
3.0±0.2
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 mm or more
1/7
MARKING
(4) (3)
X
XB
KGF1146¡ electronic components
(1)
(2)
ALPHABETICAL
NUMERICAL
PRODUCT TYPE
CIRCUIT
D (3)
(1)
G
(4) GND
APPLICATION EXAMPLE FOR PORTABLE PHONES
S (2)
LOT
NUMBER
100 pF
(1) Gate
(2) Source
(3) Drain
(4) GND
Antenna
Duplexer
KGF1175
Head amplifier
KGF1305 KGF1254/56
SAW
filter
Driver
amplifler
amplifier
KGF1155
GaAs device
SAW
filter
amplifier
KGL2115
KGL2115
Mixer
Receiving
system
intermediate
frequency
KGF1165
Wide-band
amplifier
Prescaler
Prescaler
Transmission system
intermediate frequency
KGF1145/46
Buffer amplifier. OscillatorPower
Divider
1
n
Divider
1
n
Buffer amplifier. Oscillator
KGF1145/46
VCO
Filter
Filter
VCO
2/7
KGF1146¡ electronic components
ABSOLUTE MAXIMUM RATINGS
Item Symbol Unit Min. Max.
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
V
DS
V
GS
I
DS
Ptot
Tch
Tstg
ELECTRICAL CHARACTERISTICS
Item Symbol Condition Unit Min. Max.
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Drain current
Operating current
Gate-source cut-off voltage
Transconductance
Output power
Isolation
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
g
P
ISO
I
D
m
O
V
= –3 V
GS
= –6 V
V
GDO
= 3 V, VGS = –2.0 V
V
DS
= 3 V, VGS = 0 V
V
DS
(*1), P
V
V
(*1), P
(*1), P
= –10 dBm
IN
= 3 V, IDS = 120 mA
DS
= 3 V, IDS = 2.0 mA
DS
= –10 dBm
IN
= –10 dBm
IN
V
V
mA
mW
°C
°C
mA
mA
mA
mA
mA
V
mS
dBm
dB
—
–3
—
—
—
–45
—
—
—
15
—
–1.5
8
1.5
40
(Ta = 25°C)
6
0.4
60
200
150
125
(Ta = 25°C)
12
60
120
—
2.5
–0.5
—
—
—
*1 Self-bias condition: V
= 5.0 ± 0.25 V, V
DD
= 0 V, f = 850 MHz
G
3/7
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