![](/html/ae/ae33/ae337fa63cbe716f5c85f249b3b911f4a235e1ce4c890690d6e4416e062daca9/bg1.png)
October 1, 2008
ODHKGA4163-02
KGA4163
10 Gbps Transimpedance Amplifier IC
GENERAL DESCRIPTION
Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical
communication. The IC has high sensitivity and overload performance.
FEATURES
Transimpedance : 1.4kOhm (Differential)
Sensitvity : -20.5dBm
Overload : +2dBm
Chip Size : 0.80×1.09mm2
+3.3V Single Power Supply
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameters Symbol Units Rating
Supply Voltage V
Input Current I(IN) mA +4
Storage Temperature Range TST °C –40 to +125
RECOMMENDED OPERATING CONDITIONS
Parameters Symbol Units Min. Typ. Max.
Supply Voltage Vd V +3.05 +3.30 +3.55
Operating Temperature Range *1)
*1) At backside of die.
Ts °C -10 — +90
V 0 to +4
d
1/8
![](/html/ae/ae33/ae337fa63cbe716f5c85f249b3b911f4a235e1ce4c890690d6e4416e062daca9/bg2.png)
ODHKGA4163-02
KGA4163
ELECTRICAL CHARACTERISTICS
(Ta= 25°C, Vd= +3.30V, C(diode) 0.15pF, unless otherwise noted )
Parameters Units Min. Typ. Max.
Transimpedance (Differential Output, I
Transimpedance (Single Ended Output, I
Maximum Single Ended Output Swing mVpp 300 450 570
Small Signal Bandwidth (–3 dB) GHz 9.0 11.0 —
Optical Sensitivity *1)
Optical Overload *1)
Output Return Loss ( f < 10 GHz ) dB — — -10
Input Bias Voltage (I
= 0 mA) *2), *3)
(IN)
Supply Current *2)
Power Consumption *2)
*1) Measured at 10
ratio of transmitter of 13dB.
*2) Under the recommended operating conditions (-10°C < Ta < 90°C, 3.05V < Vd < 3.55V)
*3) The input bias voltage will increase in the value, according to the input current. At I
1.0V.
-12
BER with a 231-1 PRBS at 10Gbps, assuming responsivity of photo diode of 1.0 A/W and extinction
<50 µA) 750 1400 1900
(IN)
<50 µA)
(IN)
375 700 950
dBm — -20.5 -19.8
dBm +1.0 +2.0 —
V +0.58 +0.75 +0.92
mA — 64 79
W — 0.20 0.28
= 2.5mA, the value is about
(IN)
2/8
![](/html/ae/ae33/ae337fa63cbe716f5c85f249b3b911f4a235e1ce4c890690d6e4416e062daca9/bg3.png)
FREQUENCY RESPONSE (TYP.)
(Ta= 25°C, C(diode) 0.15 pF)
65
ODHKGA4163-02
KGA4163
Vd = 3.30V
Vd = 3.55V
60
55
Vd = 3.05V
50
Pin = -20dBm
45
OUTP
OUTN
Transim pedance [ dB]
40
0.13 20
0.5 1 5 10
Frequency [GHz]
OUTPUT VOLTAGE VS. INPUT CURRENT (TYP.)
(Ta= 25°C, Extinction ratio of optical input signal: 13dB)
600
500
400
300
200
Vd=3.05 V
100
Vd=3.30 V
Vd=3.55 V
Output Amplitude [mVpp]
0
0 0.5 1.0 1.5 2.0
Inpu t DC Current [mA]
3/8