1Oki Semiconductor
10-GHz GaAs Family
High-Speed Optical Communications Systems
INTRODUCTION
Oki’s 10-GHz logic devices are manufactured using a 0.2-µm, ion-implanted process, which is similar to
Oki’s familiar 0.5-µm telecommunications process. However, the 0.2-µm process uses a phase-shifting
edge line (PEL) masking method for gate fabrication. Gold-based, three-level metal interconnections are
used for high density and shorter wiring paths. Layers 1 and 2 are signal lines. Layer 3, which is formed
by electroplating, is used for ground or power supply lines because of its lower resistance. An optional
buried “p” channel structure is adopted for reducing short channel effects.
The following table shows the digital GaAs logic processes of the 10-GHz GaAs family.
The key to operating reliably at 10 Gbps is logic circuitry that can easily manipulate data at over 13 Gbps.
The higher frequency overhead is required to meet the different clock skews encountered when designing and routing 10-Gbps data management hardware.
The logic is either direct-coupled FET logic (DCFL) or source-coupled FET logic (SCFL). The low-drive
disadvantage of DCFL can be improved by using super-buffer FET logic (SBFL). The basic speed of SBFL
is slower than DCFL, but SBFL is faster with higher fanouts and longer metal runs. A designer selects the
best performing logic for each logic element application. SBFLs used for clock distribution, output buffers, etc. Typical gate delays of 9 ps and power of 2 mW per gate are achieved. Register logic elements like
D-flip flops are assembled using memory cell flip flops (MCFF) as shown in Figure 1 .The operation speed
of a MCFF, which is about twice that of a conventional 6 NOR-gate circuit, operates at very low power.
To simplify device interconnections, AC-coupled clock and data input lines are created using the circuit
shown in Figure 2 .
FEATURES
GaAs Logic Processes
Basic FET Process
Basic Gate
Circuit
Photo Masking
Gate Length
(µm)
fT (GHz)
Gate Delays
(ps)
Application
MESFET DCFL or SBFL I-line printing 0.5 30 25 < 2.4 Gbps standard cell
MESFET DCFL or SBFL PEL < 0.2 60 9 >12-Gbps hand-routed logic
Pseudomorphic-inverted HEMT DCFL or SBFL PEL 0.2 > 60 7 > 20-Gbps low-density logic
Pseudomorphic BP--MESFET Analog Deep UV 0.2 > 60 – Analog amplifier
• 10-Gbps operation: highest speed available
• ECL level logic swings: easy interface to other
logic
• Inputs internally terminated: reduces noise and
phase jitter
• 50-Ω I/Os: easy to interconnect hardware