NXP Semiconductors CGD942C User Manual

CGD942C

870 MHz, 23 dB gain power doubler amplifier

Rev. 01 — 7 June 2007 Product data sheet

1. Product profile

1.1 General description

Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
(DC), employing Hetero Field Effect Transistor (HFET) GaAs dies.

CAUTION

1.2 Features

n High output capability
n Excellent linearity
n Extremely low noise
n Excellent return loss properties
n Rugged construction
n Gold metallization ensures excellent reliability

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.3 Applications

n CATV systems operating in the 40 MHz to 870 MHz frequency range

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

G

p

I

tot

[1] Direct Current (DC)

power gain f = 870 MHz 22 23 24 dB
total current VB=24V

[1]

- 450 - mA

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 input
2, 3 common
5+V
7, 8 common
9 output

3. Ordering information

Table 3. Ordering information

Type number Package

CGD942C - rectangular single-ended package; aluminium flange;

CGD942C

870 MHz, 23 dB gain power doubler amplifier

91357

B

Name Description Version

2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads

5

2378

sym095

SOT115J

91

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

B

V

i(RF)

T

stg

T

mb

supply voltage - 30 V
RF input voltage single tone - 75 dBmV

132 channels flat - 45 dBmV
storage temperature −40 +100 °C
mounting base temperature −20 +100 °C

CGD942C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 7 June 2007 2 of 7

NXP Semiconductors

CGD942C

870 MHz, 23 dB gain power doubler amplifier

5. Characteristics

Table 5. Characteristics

Bandwidth to 870 MHz; VB= 24 V (DC); Tmb=35°C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

G

p

SL
FL flatness of frequency response f = 40 MHz to 870 MHz
CTB composite triple beat 79 + 53 flat NTSC channels

CSO composite second-order distortion 79 + 53 flat NTSC channels

Xmod cross modulation 79 + 53 flat NTSC channels
RL

RL

NF noise figure f = 50 MHz - 3.5 5.0 dB

I

tot

power gain f = 870 MHz 22 23 24 dB
slope straight line f = 40 MHz to 870 MHz

sl

98 flat PAL channels

98 flat PAL channels

input return loss f = 40 MHz to 80 MHz 20 - - dB

in

[1]

1- 2dB

[2]

- 0.5 - dB

[3]

- −68 −66 dB

[4]

- −66 - dB

[3]

- −70 −67 dB

[4]

- −66 - dB

[3]

- −66 −58 dB

f = 80 MHz to 160 MHz 19 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 18 - - dB

output return loss f = 40 MHz to 80 MHz 20 - - dB

out

f = 80 MHz to 160 MHz 19 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 18 - - dB

f = 870 MHz - 3.5 5.0 dB

total current VB=24V

[5]

- 450 - mA

[1] Gp at 870 MHz minus Gp at 40 MHz.
[2] Flatness straight line (peak to valley).
[3] 79 NTSC channels: 55.25 MHz to 547.25 MHz, 48 dBmV output level; + 53 NTSC channels 553.25 MHz to 997.25 MHz, 38 dBmV

output level.
[4] Vo= 48 dBmV.
[5] Direct Current (DC).

CGD942C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 7 June 2007 3 of 7