NXP Semiconductors BGY687 Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D252

BGY687

600 MHz, 21.5 dB gain push-pull
amplifier

Product specification
Supersedes data of 1995 Sep 11

2001 Nov 08

NXP Semiconductors Product specification

Fig.1 Simplified outline.

handbook, halfpage

789

2

351

Side view

MSA319

600 MHz, 21.5 dB gain push-pull amplifier BGY687

FEATURES

 Excellent linearity
 Extremely low noise
 Silicon nitride passivation
 Rugged construction
 Gold metallization ensures excellent reliability.

DESCRIPTION

Hybrid high dynamic range amplifier module designed for
CATV systems operating over a frequency range of
40 to 600 MHz at a voltage supply of 24 V (DC).

QUICK REFERENCE DATA

PINNING - SOT115J

PIN DESCRIPTION

1 input
2 common
3 common
5+V
7 common
8 common
9 output

B

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f = 50 MHz 21 22 dB

f = 600 MHz 22  dB

I

tot

total current consumption (DC) VB=24V  240 mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 601 34).

SYMBOL PARAMETER MIN. MAX. UNIT

V

i

T

stg

T

mb

RF input voltage  65 dBmV
storage temperature 40 +100 C
operating mounting base temperature 20 +100 C

2001 Nov 08 2

NXP Semiconductors Product specification

600 MHz, 21.5 dB gain push-pull amplifier BGY687

CHARACTERISTICS

Bandwidth 40 to 600 MHz; T

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f =50 MHz 21 22 dB

SL slope cable equivalent f = 40 to 600 MHz 0.8 2.2 dB
FL flatness of frequency response f = 40 to 600 MHz 0.2 dB
S

11

S

22

S

21

input return losses f = 40 to 80 MHz 20  dB

output return losses f = 40 to 80 MHz 20  dB

phase response f = 50 MHz 45 +45 deg

CTB composite triple beat 85 channels flat;

X

mod

cross modulation 85 channels flat;

CSO composite second order distortion 85 channels flat;

d

2

V

o

second order distortion note 1 66 dB

output voltage dim= 60 dB; note 2 58  dBmV
NF noise figure f = 600 MHz  6.5 dB
I

tot

total current consumption (DC) note 3  240 mA

=30C; ZS=ZL=75.

case

f = 600 MHz 22  dB

f = 80 to 160 MHz 19  dB
f=160to600MHz 18  dB

f = 80 to 160 MHz 19  dB
f=160to550MHz 18  dB
f=550to600MHz 16  dB

54 dB

=44dBmV;

V

o

measured at 595.25 MHz

54 dB

=44dBmV;

V

o

measured at 55.25 MHz

52 dB

V

=44dBmV;

o

measured at 596.5 MHz

Notes

1. f

= 55.25 MHz; Vp= 44 dBmV; fq= 541.25 MHz; Vq= 44 dBmV; measured at fp+fq=596.5MHz.

p

=590.25MHz; Vp=Vo; fq=597.25MHz; Vq=Vo 6dB; fr= 599.25 MHz; Vr=Vo 6 dB; measured at

2. f

p

 fr=588.25MHz.

f

p+fq

3. The module normally operates at V

= 24 V, but is able to withstand supply transients up to 30 V.

B

2001 Nov 08 3