NXP Semiconductors BGY587B Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

M3D252

BGY587B

550 MHz, 27 dB gain push-pull
amplifier

Product specification
Supersedes data of 1997 Apr 10

2001 Oct 22

NXP Semiconductors Product specification

Fig.1 Simplified outline.

789

2

351

Side view

MSA319

550 MHz, 27 dB gain push-pull amplifier BGY587B

FEATURES

 Excellent linearity
 Extremely low noise
 Silicon nitride passivation
 Rugged construction
 TiPtAu metallized crystals ensure

optimal reliability.

PINNING - SOT115J PIN CONFIGURATION

PIN DESCRIPTION

1 input
2 common
3 common
5+V

B

7 common
8 common

DESCRIPTION

9 output

Hybrid amplifier module for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of +24 V (DC).

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f = 50 MHz 26.2 27.8 dB

f = 550 MHz 27.5  dB

I

tot

total current consumption (DC) VB=+24V  340 mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 601 34).

SYMBOL PARAMETER MIN. MAX. UNIT

V

i

T

stg

T

mb

V

B

RF input voltage  55 dBmV
storage temperature 40 +100 C
operating mounting base temperature 20 +100 C
DC supply voltage  +28 V

2001 Oct 22 2

NXP Semiconductors Product specification

550 MHz, 27 dB gain push-pull amplifier BGY587B

CHARACTERISTICS
Table 1 Bandwidth 40 to 550 MHz; T

=30C; ZS=ZL=75

case

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f = 50 MHz 26.2 27.8 dB

f = 550 MHz 27.5 dB
SL slope cable equivalent f = 40 to 550 MHz 0.5 2.5 dB
FL flatness of frequ ency response f = 40 to 550 MHz 0.4 dB
S

11

input return losses f=40to80MHz 20  dB

f = 80 to 160 MHz 19  dB

f=160to550MHz 18  dB
S

22

output return losses f = 40 to 80 MHz 20  dB

f = 80 to 160 MHz 19  dB

f=160to550MHz 18  dB
CTB composite triple beat 77 channels flat; V

=44dBmV;

o

57 dB

measured at 547.25 MHz
X

mod

cross modulation 77 channels flat; Vo=44dBmV;

60 dB

measured at 55.25 MHz
CSO composite second order

distortion

d

2

V

o

second order distortion note 1 68 dB
output voltage dim= 60 dB; note 2 61  dBmV

77 channels flat; V

=44dBmV;

o

measured at 548.5 MHz

57 dB

F noise figure f = 550 MHz  6.5 dB
I

tot

total current consumption DC value; VB= +24 V; note 3  340 mA

Notes

= 55.25 MHz; Vp= 44 dBmV;

1. f

p

=493.25MHz; Vq= 44 dBmV;

f

q

measured at f

= 548.5 MHz.

p+fq

2. Measured according to DIN45004B;
=540.25MHz; Vp=Vo= 66.5 dBmV;

f

p

f

=547.25MHz; Vq=Vo6dB;

q

= 549.25 MHz; Vr=Vo6dB;

f

r

measured at f

 fr=538.25MHz.

p+fq

3. The module normally operates at V

= +24 V, but is able to withstand supply transients up to +30 V.

B

2001 Oct 22 3