NXP Semiconductors BGA2748 Datasheet

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

MBD128

BGA2748

MMIC wideband amplifier

Product specification
Supersedes data of 2002 Jul 03

2010 Sep 13

NXP Semiconductors Product specification

3

T

MMIC wideband amplifier BGA2748

FEATURES

• Internally matched

• Wide frequency range

• Optimized for 900 MHz

• Excellent isolation

• Low noise

• Unconditionally stable.

APPLICATIONS

• Cable systems

• LNB IF amplifiers

• General purpose

• ISM.

DESCRIPTION

Silicon Monolitic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3RF out
4GND1
6RF in

4

56

6

132

op view

Marking code: G3* * = - : made in Hong Kong

MAM455

* = p : made in Hong Kong
* = t : made in Malaysia

1

Fig.1 Simplified outline (SOT363) and symbol.

2, 54

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

S

I

S

2

|

|s

21

DC supply voltage 3 4 V
DC supply current 5.7 − mA

insertion power gain f = 1 GHz 21.8 − dB
NF noise figure f = 1 GHz 1.9 − dB
P

L(sat)

saturated load power f = 1 GHz −2.3 − dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.

2010 Sep 13 2

NXP Semiconductors Product specification

MMIC wideband amplifier BGA2748

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

DC supply voltage RF input AC coupled − 4V

supply current − 15 mA

total power dissipation Ts≤ 80 °C − 200 mW

storage temperature −65 +150 °C

operating junction temperature − 150 °C

maximum drive power − 10 dBm

thermal resistance from junction to solder

P

= 200 mW; Ts≤ 80 °C300K/W

tot

point

CHARACTERISTICS

=3V; IS= 5.7 mA; f = 1 GHz; Tj=25°C; unless otherwise specified.

V

S

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2

|

|s

21

supply current 4.5 5.7 8 mA

insertion power gain f = 1 GHz − 21.8 − dB

f=2GHz − 18.5 − dB

R

L IN

return losses input f = 1 GHz − 18 − dB

f=2GHz − 14 − dB

R

L OUT

return losses output f = 1 GHz − 7 − dB

f=2GHz − 8 − dB

NF noise figure f = 1 GHz − 1.9 − dB

f=2GHz − 2.4 − dB
BW bandwidth at |s
P

L(sat)

saturated load power f = 1 GHz −−2.3 − dBm

2

|

−3 dB below flat gain at 1 GHz − 1.9 − GHz

21

f=2GHz −−3.3 − dBm
P

L 1 dB

load power at 1 dB gain compression; f = 1 GHz −−9.2 − dBm

at 1 dB gain compression; f = 2 GHz −−10.9 − dBm
IP3

(in)

input intercept point f = 1 GHz −−23.7 − dBm

f=2GHz −−19.9 − dBm
IP3

(out)

output intercept point f = 1 GHz −−1.9 − dBm

f=2GHz −−1.4 − dBm

2010 Sep 13 3

NXP Semiconductors Product specification

MMIC wideband amplifier BGA2748

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the
BGA2748 MMIC. The device is internally matched to 50 Ω,
and therefore does not need any external matching. The
value of the input and output DC blocking capacitors C2,
C3 should be not more than 100 pF for applications above
100 MHz . How ev er, when the device is operated below
100 MHz , the ca pacitor value should be increased.

The 22 nF sup ply decoupling capacitor, C1 should be
located as closely as possible to the MMIC.

Separate paths must be used for the ground planes of the
ground pins GND1, GND2, and these paths must be as
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.

V

handbook, halfpage

s

C1

V

s

RF input

C2 C3

RF outRF in

GND2GND1

RF output

MGU435

handbook, halfpage

DC-block

100 pF

input output

Fig.3 Easy cascading application circuit.

handbook, halfpage

from RF

circuit

oscillator

Fig.4 Application as IF amplifier.

mixer

DC-block

100 pF

wideband

amplifier

DC-block

100 pF

MGU437

to IF circuit
or demodulator

MGU438

Fig.2 Typical application circuit.

Figure 3 sho ws two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.

The excellent wideband characteristics of the MMIC make
it and ideal building block in IF amplifier applications such
as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).

In Fig.6 the MMIC is used as a driver to the power ampli fier
in part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.

handbook, halfpage

antenna

handbook, halfpage

from modulation

or IF circuit

Fig.6 Application as driver amplifier.

LNA

mixer

wideband

amplifier

oscillator

to IF circuit
or demodulator

Fig.5 Application as RF amplifier.

mixer

wideband

amplifier

oscillator

MGU439

to power
amplifier

MGU440

2010 Sep 13 4