NXP Semiconductors BGA2714 User Manual

MMIC wideband amplifi er BGA2714
Best-in-class LNB performance
Improve the performance of your LNB design with our MMIC wideband amplifi er BGA2714. It delivers best-in-class performance at very low current, is small and needs very few external components. In short, it’s the ideal 1st stage IF amplifi er for LNBs and other low-noise wideband applications.
Key features
Ñ
Extremely fl at gain curve (21 dB ± 1 dB up to 2.5 GHz)
Ñ
Wide frequency range (up to 2.7 GHz @ 3 dB gain bandwidth)
Ñ
Ñ
Very low current (4.6 mA @ 3 V)
Ñ
Low supply voltage (3 V)
Ñ
Good linearity
Ñ
Low noise (2.2 dB @ 1 GHz)
Ñ
Excellent reverse isolation (> 50 dB up to 2 GHz)
Ñ
Unconditionally stable
Ñ
Very few external components required
Ñ
Compact SOT363 package
Key applications
Ñ
LNB IF amplifi er
Ñ
General-purpose low-noise wideband amplifi er for frequencies up to 2.7 GHz
Our MMIC wideband amplifi er BGA2714 is designed to meet the specifi c needs of LNB designs. It operates from a conveniently low supply voltage with a low supply current.
In addition, it delivers industry-leading performance with a wide frequency range, high and fl at power gain and low noise. Supplied in a compact, industry-standard SOT363 package, it simplifi es system integration.
MMICs like NXP Semiconductors’ BGA2714 are smart RF solutions that automatically compensate for temperature and process variations. They integrate transistors, resistors and capacitors into a single device, reducing component count and simplify design. In fact, with the BGA2714 you need just two coupling capacitors and an RF decoupling capacitor.
A demoboard is available to help further simplify your design-in process
30
25
20
15
10
5
0
1
2
3
0 500 1000 1500 2000 2500 3000
Gp
(dB)
f (MHz)
bra922
wideband
amplifier
to IF circuit or demodulator
oscillator
from RF circuit
mixer
T
= 25ºC; P
amb
= - 40 dBm; Z0 = 50 Ω
drive
1 Vs = 3.3 V; Is = 4.96 mA
2 Vs = 3.0 V; Is = 4.58 mA
3 Vs = 2.7 V; Is = 4.16 mA
Power gain as function of frequenc y; typical values
Application as IF amplifier
Quick reference data
Symbol Parameter Condition Typical value
V
s
I
s
G
p
NF noise figure 1 GHz 2.2 dB
PL
(sat)
supply voltage 3 V
supply current 4.58 mA
power gain 1 GHz 20 .4 dB
saturated load power 1 GHz - 3.4 dBm
www.nxp.com
© 2007 NXP B.V.
All rights reser ved. Reproduc tion i n who le or in part is p rohibited witho ut the prio r wri tten consent of t he co pyright owner.
The informat ion pre sented in thi s docu ment d oes not form part of an y quota tion o r contr act, is beli eved to be accurate and
reliab le an d may be change d wi thout notice. No liabilit y wi ll be acce pted by th e pu blisher for any conseque nce of it s us e.
Public ation there of does not conv ey nor imply any l icense unde r patent- or othe r industri al or intellec tual proper ty right s.
Date of rel ease: Februa ry 2007
Docum ent order num ber: 9397 750 15879
Printe d in the Nether lands
Loading...