NXP Z0103NN Schematic [ru]

S

O

T

2

2

3

Z0103NN

4Q Triac

26 August 2013 Product data sheet

1. General description

Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface­mountable plastic package intended for applications requiring direct interfacing to logic
level ICs and low power gate drivers.

2. Features and benefits

Direct interfacing to logic level ICs

•

Direct interfacing to low power gate drive circuits

•

High blocking voltage capability

•

Planar passivated for voltage ruggedness and reliability

•

Surface-mountable package

•

Triggering in all four quadrants

•

Very sensitive gate in four quadrants

•

3. Applications

General purpose low power motor control

•

Home appliances

•

Industrial process control

•

Low power AC Fan controllers

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DRM

I

TSM

I

T(RMS)

Static characteristics

GT

repetitive peak off­state voltage

non-repetitive peak on­state current

RMS on-state current full sine wave; Tsp ≤ 105 °C; Fig. 1;

gate trigger current

full sine wave; T

tp = 20 ms; Fig. 4; Fig. 5

Fig. 2; Fig. 3

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 9

j(init)

= 25 °C;

- - 800 V

- - 8 A

- - 1 A

- - 3 mAI

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 9

Scan or click this QR code to view the latest information for this product

- - 3 mA

NXP Semiconductors

1 32

4

sym051

T1

G

T2

Z0103NN

4Q Triac

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 9

- - 3 mA

VD = 12 V; IT = 0.1 A; T2- G+;

Tj = 25 °C; Fig. 9

- - 5 mA

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

4 T2 main terminal 2

SC-73 (SOT223)

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

Z0103NN SC-73 plastic surface-mounted package with increased heatsink; 4

leads

SOT223

Z0103NN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 26 August 2013 2 / 15

NXP Semiconductors

Z0103NN

4Q Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

I

T(RMS)

TSM

repetitive peak off-state voltage - 800 V

RMS on-state current full sine wave; Tsp ≤ 105 °C; Fig. 1;

- 1 A

Fig. 2; Fig. 3

non-repetitive peak on-state
current

full sine wave; T

tp = 20 ms; Fig. 4; Fig. 5

j(init)

= 25 °C;

- 8 AI

I2t

I2t for fusing tp = 10 ms; SIN - 0.32

dIT/dt rate of rise of on-state current

I

P

P

T

T

GM

GM

G(AV)

stg

j

peak gate current - 1 A

peak gate power - 2 W

average gate power over any 20 ms period - 0.1 W

storage temperature -40 150 °C

junction temperature - 125 °C

full sine wave; T

j(init)

= 25 °C;

tp = 16.7 ms

IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;

T2+ G+

IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;

T2+ G-

IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;

T2- G-

IT = 1 A; IG = 20 mA; dIG/dt = 0.1 A/µs;

T2- G+

- 8.5 A

A2s

- 50 A/µs

- 50 A/µs

- 50 A/µs

- 20 A/µs

Z0103NN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 26 August 2013 3 / 15

NXP Semiconductors

003aac269

0

2

4

6

8

10

-2

10

-1

1 10

surge du ration (s)

I

T(RMS)

(A)

003aac270

0

0.4

0.8

1.2

-50

0

50

100

150

T

s

p

(°C

)

I

T(RMS)

(A)

003aac259

0.

0

0.

4

0.

8

1.

2

1.

6

2.

0

0

0.2

0.4

0.

6

0.

8

1 1 .

2

I

T(RMS)

(

A)

P

tot

(W)

alpha=18

0

°

12

0

°

90

°

60

°

30

°

conduction

angle

(degrees)

form

factor

a

30
60

90
120
180

4

2.8

2.2

1.9

1.57

alpha

Z0103NN

4Q Triac

f = 50 Hz; Tsp = 105 °C

Fig. 1. RMS on-state current as a function of surge

Fig. 2. RMS on-state current as a function of solder

point temperature; maximum values

duration; maximum values

alpha = conduction angle
a = form factor = I

T(RMS)

/ I

T(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

Z0103NN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 26 August 2013 4 / 15

NXP Semiconductors

003aad318

0

2

4

6

8

1

0

1

1

0

1

0

2

1

0

3

numberofcycle

s

I

TSM

(A)

I

TSM

t

I

T

T

j(init)

= 25 °C max

1/f

003aad319

1

1

0

1

0

2

1

0

3

1

0

-

5

1

0

-

4

1

0

-

3

1

0

-

2

1

0

-

1

tp(s)

I

TSM

(

A)

(1)

(2)

I

TSM

t

I

T

T

j(init)

= 25 °C max

t

p

Z0103NN

4Q Triac

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

tp ≤ 20 ms

(1) dIT/dt limit

(2) T2- G+ quadrant limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

Z0103NN All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 26 August 2013 5 / 15