The M54/74HC04 is a highspeed CMOS HEX INVERTERfabricated in silicon gate C2MOS technology. It has the same high speed performance of
LSTTL combined with true CMOS low power consumption.
The internal circuit is composedof 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped
with circuits against static discharge and transient
excess voltage.
Supply Voltage-0.5 to +7V
DC Input Voltage-0.5 to VCC+ 0.5V
I
DC Output Voltage-0.5 to VCC+ 0.5V
DC Input Diode Current± 20mA
DC Output Diode Current± 20mA
DC Output Source Sink Current Per Output Pin± 25mA
DC VCCor Ground Current± 50mA
GND
Power Dissipation500 (*)mW
Storage Temperature-65 to +150
Lead Temperature (10 sec)300
o
C
o
C
M54/M74HC04
RECO MM ENDED OPERATIN G C O NDITI ONS
SymbolParameterValueUnit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
SymbolParameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage2 to 6V
CC
Input Voltage0 to V
I
Output Voltage0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall TimeVCC= 2 V0 to 1000ns
V
= 4.5 V0 to 500
CC
V
= 6 V0 to 400
CC
Test ConditionsValue
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min.Typ.Max.Min.Max.Min.Max.
High Level Input
Voltage
2.01.51.51.5
4.53.153.153.15
6.04.24.24.2
Low Level Input
IL
Voltage
2.00.50.50.5
4.51.351.351.35
6.01.81.81.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.54.44.54.44.4
6.05.96.05.95.9
4.5I
6.0I
2.0
4.50.00.10.10.1
6.00.00.10.10.1
4.5I
6.0I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.184.314.134.10
O
=-5.2 mA 5.685.85.635.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA0.170.260.330.40
O
= 5.2 mA0.180.260.330.40
O
VI=VCCor GND±0.1±1±1µA
1.92.01.91.9
0.00.10.10.1
6.0 VI=VCCor GND11020µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
3/9
M54/M74HC04
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Inputtr=tf=6ns)
Test ConditionsValue
T
=25oC
SymbolParameter
t
t
TLH
THL
Output Transition
Time
V
CC
(V)
2.0307595110
4.58151922
A
54HC and 74HC
Min.Typ.Max.Min.Max.Min.Max.
6.07131619
t
PLH
t
PHL
Propagation
Delay Time
2.0277595110
4.59151922
6.08131619
C
C
PD
Input Capacitance5101010pF
IN
(*)Power Dissipation
22
Capacitance
(*) CPDisdefined asthe valueof the IC’s internalequivalent capacitance whichiscalculated from the operating current consumption withoutload.
(Referto TestCircuit).Average operting currentcan be obtained bythe followingequation. ICC(opr) = CPD•VCC•fIN+ICC/6(per Gate)
SWITCHING CHARACTERISTICS TEST CIRCUIT
-40 to 85oC
74HC
-55 to 125oC
54HC
Unit
ns
ns
pF
TEST CIRCUIT ICC(Opr.)
INPUTWAVEFORMIS THE SAMEASTHAT INCASE OF SWITCHINGCHARACTERISTICSTEST.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is grantedbyimplication or otherwise under any patent or patent rights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
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