
.HIGH SPEED
tPD= 6 ns (TYP.) AT VCC=5V
.LOWPOWER DISSIPATION
ICC=1 µA (MAX.) AT TA=25°C
.HIGH NOISEIMMUNITY
V
NIH=VNIL
=28%VCC(MIN.)
.OUTPUT DRIVE CAPABILITY
10 LSTTL LOADS
.SYMMETRICAL OUTPUT IMPEDANCE
IOH =IOL= 4 mA(MIN.)
.BALANCEDPROPAGATION DELAYS
t
PLH=tPHL
.WIDE OPERATINGVOLTAGERANGE
VCC(OPR)= 2 V TO 6 V
.PIN AND FUNCTION COMPATIBLE WITH
54/74LS04
M54HC04
M74HC04
HEX INVERTER
B1R
(PlasticPackage)
M1R
(MicroPackage)
ORDER CODES :
M54HC 04F1R M74H C04M1R
M74HC 04B1R M 74HC04C1R
(CeramicPackage)
(Chip Carrier)
F1R
C1R
DESCRIPTION
The M54/74HC04 is a highspeed CMOS HEX INVERTERfabricated in silicon gate C2MOS technology. It has the same high speed performance of
LSTTL combined with true CMOS low power consumption.
The internal circuit is composedof 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped
with circuits against static discharge and transient
excess voltage.
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN CONNECTIONS(top view)
NC =
No Internal
Connection
December1992
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M54/M74HC04
TRUTH TABLE
AY
LH
HL
PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 3, 5, 9,
1A to 6A Data Inputs
11, 13
2, 4, 6, 8,
1Y to 6Y Data Outputs
10, 12
7 GND Ground (0V)
14 V
CC
Positive Supply Voltage
LOGI C DI AG RAM (Pe r Gate)
IEC LOGIC SYMBOL
ABSOLU TE MAXI MU M RAT INGS
Symbol Parameter Value Unit
V
CC
V
V
O
I
IK
I
OK
I
O
or I
I
CC
P
D
T
stg
T
L
AbsoluteMaximumRatingsarethosevalues beyondwhichdamagetothedevicemayoccur. Functionaloperationunder theseconditionisnotimplied.
(*)500 mW: ≅ 65oC derate to300 mW by 10mW/oC: 65oCto85oC
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Supply Voltage -0.5 to +7 V
DC Input Voltage -0.5 to VCC+ 0.5 V
I
DC Output Voltage -0.5 to VCC+ 0.5 V
DC Input Diode Current ± 20 mA
DC Output Diode Current ± 20 mA
DC Output Source Sink Current Per Output Pin ± 25 mA
DC VCCor Ground Current ± 50 mA
GND
Power Dissipation 500 (*) mW
Storage Temperature -65 to +150
Lead Temperature (10 sec) 300
o
C
o
C

M54/M74HC04
RECO MM ENDED OPERATIN G C O NDITI ONS
Symbol Parameter Value Unit
V
V
V
T
t
r,tf
DC SPECIFICA TIONS
Symbol Parameter
V
IH
V
V
OH
V
OL
I
I
CC
Supply Voltage 2 to 6 V
CC
Input Voltage 0 to V
I
Output Voltage 0 to V
O
Operating Temperature: M54HC Series
op
M74HC Series
CC
CC
-55 to +125
-40 to +85
Input Rise and Fall Time VCC= 2 V 0 to 1000 ns
V
= 4.5 V 0 to 500
CC
V
= 6 V 0 to 400
CC
Test Conditions Value
V
(V)
CC
=25oC
T
A
54HC and 74HC
-40 to 85oC
74HC
-55 to 125oC
Min. Typ. Max. Min. Max. Min. Max.
High Level Input
Voltage
2.0 1.5 1.5 1.5
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
Low Level Input
IL
Voltage
2.0 0.5 0.5 0.5
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
High Level
Output Voltage
Low Level Output
Voltage
Input Leakage
I
Current
Quiescent Supply
2.0
V
=
I
4.5 4.4 4.5 4.4 4.4
6.0 5.9 6.0 5.9 5.9
4.5 I
6.0 I
2.0
4.5 0.0 0.1 0.1 0.1
6.0 0.0 0.1 0.1 0.1
4.5 I
6.0 I
6.0
IO=-20 µA
V
IH
or
V
IL
=-4.0 mA 4.18 4.31 4.13 4.10
O
=-5.2 mA 5.68 5.8 5.63 5.60
O
V
=
I
IO=20µA
V
IH
or
V
IL
= 4.0 mA 0.17 0.26 0.33 0.40
O
= 5.2 mA 0.18 0.26 0.33 0.40
O
VI=VCCor GND ±0.1 ±1 ±1 µA
1.9 2.0 1.9 1.9
0.0 0.1 0.1 0.1
6.0 VI=VCCor GND 1 10 20 µA
Current
54HC
V
V
o
C
o
C
Unit
V
V
V
V
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