NXP RB751CS40, RB751S40, RB751V40 Schematic [ru]
RB751 series
Schottky barrier single diodes
Rev. 01 — 21 May 2007 Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diodes with an integrated guard ring for stress protection,
encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Table 1. Product overview
Type number Package Package
RB751CS40 SOD882 - leadless ultra small
RB751S40 SOD523 SC-79 ultra small
RB751V40 SOD323 SC-76 very small
1.2 Features
NXP JEITA
configuration
n Low forward voltage
n Low capacitance
1.3 Applications
n Ultra high-speed switching
n Voltage clamping
n Line termination
n Reverse polarity protection
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
I
F
V
RRM
V
F
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward current - - 120 mA
repetitive peak reverse
voltage
forward voltage IF=1mA
--40V
[1]
- - 370 mV
NXP Semiconductors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOD882
1 cathode
2 anode
SOD323; SOD523
1 cathode
2 anode
[1] The marking bar indicates the cathode.
RB751 series
Schottky barrier single diodes
[1]
21
Transparent
top view
[1]
12
001aab540
12
sym001
12
sym001
3. Ordering information
Table 4. Ordering information
Type number Package
RB751CS40 - leadless ultra small plastic package; 2 terminals;
RB751S40 SC-79 plastic surface-mounted package; 2 leads SOD523
RB751V40 SC-76 plastic surface-mounted package; 2 leads SOD323
4. Marking
Table 5. Marking codes
Type number Marking code
RB751CS40 F6
RB751S40 G4
RB751V40 W8
Name Description Version
SOD882
body 1.0 × 0.6 × 0.5 mm
RB751_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 May 2007 2 of 10
NXP Semiconductors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
V
R
I
F
I
FSM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
RB751 series
Schottky barrier single diodes
repetitive peak reverse
voltage
reverse voltage - 40 V
forward current - 120 mA
non-repetitive peak forward
current
total power dissipation T
square wave;
t
<10ms
p
≤ 25 °C
amb
RB751CS40
RB751S40
RB751V40 - 280 mW
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
-40V
- 200 mA
[1]
[2]
- 250 mW
[2]
- 280 mW
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
RB751CS40
RB751S40
RB751V40 - - 450 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 8. Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
V
F
I
R
C
d
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
forward voltage IF=1mA
reverse current VR= 30 V - - 0.5 µA
diode capacitance VR= 1 V; f = 1 MHz - 2 - pF
in free air
[1]
[2]
- - 500 K/W
[2]
- - 450 K/W
[1]
- - 370 mV
RB751_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 May 2007 3 of 10
NXP Semiconductors
RB751 series
Schottky barrier single diodes
10
I
F
(mA)
10
−1
10
−2
10
(1) T
(2) T
(3) T
(4) T
2
1
0
amb
amb
amb
amb
= 125 °C
=85°C
=25°C
= −40 °C
(1) (2) (3) (4)
0.6 0.80.40.2 1
mlc361
V
F
(V)
Fig 1. Forward current as a function of forward
voltage; typical values
10
I
R
(µA)
10
10
−1
10
−2
10
(1) T
(2) T
(3) T
3
2
1
0
amb
amb
amb
(1)
(2)
(3)
2010 4030
= 125 °C
=85°C
=25°C
mlc362
VR (V)
Fig 2. Reverse current as a function of reverse
voltage; typical values
mlc363
VR (V)
f = 1 MHz; T
amb
=25°C
5
C
d
(pF)
4
3
2
1
0
01020 4030
Fig 3. Diode capacitance as a function of reverse voltage; typical values
RB751_SER_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 21 May 2007 4 of 10
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