NXP PZU10B, PZU10B1, PZU10B2, PZU10B3, PZU11B Schematic [ru]
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PZUxB series
Single Zener diodes in a SOD323F package
Rev. 02 — 15 November 2009 Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface
Mounted Device (SMD) plastic package.
1.2 Features
Total power dissipation: ≤ 310 mW
Tolerance series: B: approximately ±5 %; B1, B2, B3: sequential, approximately ±2%
Small plastic package suitable for surface mounted design
Wide working voltage range: nominal 2.4 V to 36 V
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
F
P
tot
[1] Pulse test: tp≤ 300 μs; δ≤0.02
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
forward voltage IF=100mA
total power dissipation T
amb
≤ 25 °C
[1]
--1.1V
[2]
--310mW
[3]
--550mW
2
.
NXP Semiconductors
8
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode
2 anode
[1] The marking bar indicates the cathode
3. Ordering information
Table 3. Ordering information
Type number Package
PZU2.4B to
PZU36B
[1]
PZUxB series
Single Zener diodes in a SOD323F package
[1]
21
1
Name Description Version
SC-90 plastic surface mounted package; 2 leads SOD323F
2
sym06
4. Marking
[1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V.
Table 4. Marking codes
Type number Marking code Type number Marking code
B B1 B2 B3 B B1 B2 B3
PZU2.4 G3 - - - PZU10 GJ FH HF KB
PZU2.7 G4 F3 H1 - PZU11 GK FJ HG KC
PZU3.0 G5 F4 H2 - PZU12 GL FK HH KD
PZU3.3 G6 F5 H3 - PZU13 GM FL HJ KE
PZU3.6 G7F6H4-PZU14 --HKPZU3.9 G8 F7 H5 - PZU15 GN FM HL KF
PZU4.3 G9 F8 H6 HS PZU16 GP FN HM KG
PZU4.7 GA F9 H7 HT PZU18 GQ FP HN KH
PZU5.1 GB FA H8 HU PZU20 GR FQ HP KJ
PZU5.6 GC FB H9 HV PZU22 GS FR HQ KK
PZU6.2 GD FC HA HW PZU24 GT FS HR KL
PZU6.8 GE FD HB HX PZU27 GU - - PZU7.5 GF FE HC HY PZU30 GV - - PZU8.2 GG FF HD HZ PZU33 GW - - PZU9.1 GH FG HE KA PZU36 GX - - -
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 2 of 12
NXP Semiconductors
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1] tp=100μs; square wave; Tj=25°C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
PZUxB series
Single Zener diodes in a SOD323F package
forward current - 200 mA
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation T
amb
≤ 25 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
- see Table 8
and 9
[1]
-40W
[2]
- 310 mW
[3]
- 550 mW
2
.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
[3] Soldering point of cathode tab
7. Characteristics
Table 7. Characteristics
Tj=25°C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
F
[1] Pulse test: tp≤ 300 μs; δ≤0.02
forward voltage IF=10mA
=100mA
I
F
in free air
[1]
--400K/W
[2]
--230K/W
[3]
--55K/W
2
.
[1]
--0.9V
[1]
--1.1V
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 3 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 8. Characteristics per type; PZU2.4B to PZU5.6B3
=25°C unless otherwise specified
T
j
PZU
Sel Working
xxx
voltage
(V);
V
Z
=5mA
I
Z
Maximum differential
resistance
(Ω)
r
dif
Reverse
current
(μA)
I
R
T emperature
coefficient
(mV/K);
S
Z
=5mA
I
Z
Diode
capacitance
[1]
(pF)
C
d
Non-repetitive peak
reverse current
I
Min Max IZ=0.5mA IZ=5mA Max VR(V) Typ Max Max
2.4 B 2.3 2.6 1000 100 50 1 −1.6 450 8
2.7 B 2.5 2.9 1000 100 20 1 −2.0 440 8
B1 2.5 2.75
B2 2.65 2.9
3.0 B 2.80 3.20 1000 95 10 1 −2.1 425 8
B1 2.80 3.05
B2 2.95 3.20
3.3 B 3.10 3.50 1000 95 5 1 −2.4 410 8
B1 3.10 3.35
B2 3.25 3.50
3.6 B 3.40 3.80 1000 90 5 1 −2.4 390 8
B1 3.40 3.65
B2 3.55 3.80
3.9 B 3.70 4.10 1000 90 3 1 −2.5 370 8
B1 3.70 3.97
B2 3.87 4.10
4.3 B 4.01 4.48 1000 90 3 1 −2.5 350 8
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48
4.7 B 4.42 4.90 800 80 2 1 −1.4 325 8
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.90
5.1 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5
B1 4.84 5.04
B2 4.98 5.20
B3 5.14 5.37
5.6 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92
ZSM
(A)
[2]
[1] f = 1 MHz; VR=0V
= 100 μs; square wave; Tj=25°C prior to surge
[2] t
p
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 4 of 12
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