NXP PZU10B1A, PZU10B1A/DG, PZU10B2A, PZU10B2A/DG, PZU10B3A Schematic [ru]

PZUxBA series

Single Zener diodes

Rev. 01 — 19 September 2008 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD323 (SC-76) very small Surface-Mounted
Device (SMD) plastic package.

1.2 Features

n Non-repetitive peak reverse power

dissipation: P

n Total power dissipation: P

ZSM

≤ 40 W

≤ 320 mW n Small plastic package suitable for

tot

n Low reverse current IRrange

surface-mounted design

n Tolerance series:

n AEC-Q101 qualified

B: approximately ±5%;
B1, B2, B3: approximately ±2%

n Wide working voltage range:

nominal 2.4 V to 36 V (E24 range)

1.3 Applications

n General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

F

P

ZSM

P

tot

[1] Pulse test: tp≤ 300 µs; δ≤0.02.
[2] tp= 100 µs; square wave; Tj=25°C prior to surge
[3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

forward voltage IF= 100 mA
non-repetitivepeakreverse

power dissipation
total power dissipation T

footprint.

amb

≤ 25 °C

[1]

- - 1.1 V

[2]

--40W

[3]

- - 320 mW

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode
2 anode

[1] The marking bar indicates the cathode.

3. Ordering information

Table 3. Ordering information

Type number Package

PZU2.4BA to
PZU36BA

PZU2.4BA/DG to
PZU36BA/DG

[1]

PZUxBA series

Single Zener diodes

[1]

21

Name Description Version

SC-76 plastic surface-mounted package; 2 leads SOD323

[1][2]

1

2

006aaa152

[1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V.
[2] /DG: halogen-free

PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 19 September 2008 2 of 14

NXP Semiconductors

4. Marking

Table 4. Marking codes

Type number

PZU2.4*A X8 - - - PZU2.4*A/DG Y8 - - ­PZU2.7*A X9 XA XB - PZU2.7*A/DG Y9 YA YB ­PZU3.0*A XT XU XV - PZU3.0*A/DG YT YU YV ­PZU3.3*A XW XX XY - PZU3.3*A/DG YW YX YY ­PZU3.6*A XZ MC MD - PZU3.6*A/DG YZ NC ND ­PZU3.9*A ME MF MG - PZU3.9*A/DG NE NF NG ­PZU4.3*A MM MN MP MR PZU4.3*A/DG NM NN NP NR
PZU4.7*A MS MT MU MV PZU4.7*A/DG NS NT NU NV
PZU5.1*A MW MX MY MZ PZU5.1*A/DG NW NX NY NZ
PZU5.6*A LF LG LH LK PZU5.6*A/DG RF RG RH RK
PZU6.2*A LL LM LN LP PZU6.2*A/DG RL RM RN RP
PZU6.8*A LR LS LT LU PZU6.8*A/DG RR RS RT RU
PZU7.5*A LV LW LX LY PZU7.5*A/DG RV RW RX RY
PZU8.2*A LZ CR CS CT PZU8.2*A/DG RZ ER ES ET
PZU9.1*A CU CV CW CX PZU9.1*A/DG EU EV EW EX
PZU10*A VA VB VC VD PZU10*A/DG WA WB WC WD
PZU11*A VE VF VG VH PZU11*A/DG WE WF WG WH
PZU12*A VK VL VM VN PZU12*A/DG WK WL WM WN
PZU13*A VP VR VS VT PZU13*A/DG WP WR WS WT
PZU14*A - - VU - PZU14*A/DG - - WU ­PZU15*A VV VW VX VY PZU15*A/DG WV WW WX WY
PZU16*A VZ X1 X2 X3 PZU16*A/DG WZ Y1 Y2 Y3
PZU18*A X4 X5 X6 X7 PZU18*A/DG Y4 Y5 Y6 Y7
PZU20*A XC XD XE XF PZU20*A/DG YC YD YE YF
PZU22*A XG XH XK XL PZU22*A/DG YG YH YK YL
PZU24*A XM XN XP XR PZU24*A/DG YM YN YP YR
PZU27*A XS - - - PZU27*A/DG YS - - ­PZU30*A MH - - - PZU30*A/DG NH - - ­PZU33*A MK - - - PZU33*A/DG NK - - ­PZU36*A ML - - - PZU36*A/DG NL - - -

PZUxBA series

Single Zener diodes

[1]

Marking code Type number
B B1 B2 B3 B B1 B2 B3

[1]

Marking code

[1] * = B: tolerance series B, approximately ±5%

* = B1, B2, B3: tolerance series B1, B2, B3: approximately ±2%

PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 19 September 2008 3 of 14

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

I

F

I

ZSM

P

ZSM

P

tot

T

j

T

amb

T

stg

[1] tp= 100 µs; square wave; Tj=25°C prior to surge
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

PZUxBA series

Single Zener diodes

forward current - 200 mA
non-repetitive peak reverse

current

non-repetitive peak reverse
power dissipation

total power dissipation T

amb

≤ 25 °C

junction temperature - 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

[1]

- see

Table 8

and

9

[1]

-40W

[2]

- 320 mW

[3]

- 490 mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from
junction to ambient

R

th(j-sp)

thermal resistance from
junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

F

[1] Pulse test: tp≤ 300 µs; δ≤0.02.

forward voltage

in free air

[1]

- - 390 K/W

[2]

- - 255 K/W

[3]

--55K/W

[1]

IF= 10 mA - - 0.9 V

= 100 mA - - 1.1 V

I

F

PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 19 September 2008 4 of 14

NXP Semiconductors

PZUxBA series

Single Zener diodes

Table 8. Characteristics per type; PZU2.4BA to PZU5.6B3A and PZU2.4BA/DG to PZU5.6B3A/DG

Tj=25°C unless otherwise specified.

PZUxBA Sel Working

voltage
V

(V)

Z

IZ=5mA IZ= 0.5 mA IZ=5mA IZ=5mA
Min Max Max Max Max VR(V) Typ Max Max

2.4 B 2.3 2.6 1000 100 50 1 −1.6 450 8

2.7 B 2.5 2.9 1000 100 20 1 −2.0 440 8
B1 2.5 2.75
B2 2.65 2.9

3.0 B 2.8 3.2 1000 95 10 1 −2.1 425 8
B1 2.8 3.05
B2 2.95 3.2

3.3 B 3.1 3.5 1000 95 5 1 −2.4 410 8
B1 3.1 3.35
B2 3.25 3.5

3.6 B 3.4 3.8 1000 90 5 1 −2.4 390 8
B1 3.4 3.65
B2 3.55 3.8

3.9 B 3.7 4.1 1000 90 3 1 −2.5 370 8
B1 3.7 3.97
B2 3.87 4.10

4.3 B 4.01 4.48 1000 90 3 1 −2.5 350 8
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48

4.7 B 4.42 4.9 800 80 2 1 −1.4 325 8
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.9

5.1 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5
B1 4.84 5.04
B2 4.98 5.2
B3 5.14 5.37

5.6 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92

Differentialresistance
r

(Ω)

dif

Reverse
current
I

(µA)

R

Temperature
coefficient
S

(mV/K)

Z

Diode
capacitance

d

(pF)

[1]

C

Non-repetitive
peak reverse
current

ZSM

(A)

[2]

I

[1] f = 1 MHz; VR=0V
[2] tp= 100 µs; square wave; Tj=25°C prior to surge

PZUXBA_SER_1 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 01 — 19 September 2008 5 of 14