NXP PZU10B, PZU10B1, PZU10B2, PZU10B3, PZU11B Schematic [ru]

...
PZUxB series
Single Zener diodes in a SOD323F package
Rev. 02 — 15 November 2009 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface Mounted Device (SMD) plastic package.

1.2 Features

Total power dissipation: 310 mWTolerance series: B: approximately ±5 %; B1, B2, B3: sequential, approximately ±2%Small plastic package suitable for surface mounted designWide working voltage range: nominal 2.4 V to 36 V

1.3 Applications

General regulation functions

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
F
P
tot
[1] Pulse test: tp≤ 300 μs; δ≤0.02 [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
forward voltage IF=100mA total power dissipation T
amb
25 °C
[1]
--1.1V
[2]
--310mW
[3]
--550mW
2
.
NXP Semiconductors
8

2. Pinning information

Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode 2 anode
[1] The marking bar indicates the cathode

3. Ordering information

Table 3. Ordering information
Type number Package
PZU2.4B to PZU36B
[1]
PZUxB series
Single Zener diodes in a SOD323F package
[1]
21
1
Name Description Version
SC-90 plastic surface mounted package; 2 leads SOD323F
2
sym06

4. Marking

[1] The series consists of 97 types with nominal working voltages from 2.4 V to 36 V.
Table 4. Marking codes
Type number Marking code Type number Marking code
B B1 B2 B3 B B1 B2 B3
PZU2.4 G3 - - - PZU10 GJ FH HF KB PZU2.7 G4 F3 H1 - PZU11 GK FJ HG KC PZU3.0 G5 F4 H2 - PZU12 GL FK HH KD PZU3.3 G6 F5 H3 - PZU13 GM FL HJ KE PZU3.6 G7F6H4-PZU14 --HK­PZU3.9 G8 F7 H5 - PZU15 GN FM HL KF PZU4.3 G9 F8 H6 HS PZU16 GP FN HM KG PZU4.7 GA F9 H7 HT PZU18 GQ FP HN KH PZU5.1 GB FA H8 HU PZU20 GR FQ HP KJ PZU5.6 GC FB H9 HV PZU22 GS FR HQ KK PZU6.2 GD FC HA HW PZU24 GT FS HR KL PZU6.8 GE FD HB HX PZU27 GU - - ­PZU7.5 GF FE HC HY PZU30 GV - - ­PZU8.2 GG FF HD HZ PZU33 GW - - ­PZU9.1 GH FG HE KA PZU36 GX - - -
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 2 of 12
NXP Semiconductors

5. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1] tp=100μs; square wave; Tj=25°C prior to surge [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm
PZUxB series
Single Zener diodes in a SOD323F package
forward current - 200 mA non-repetitive peak reverse
current non-repetitive peak reverse
power dissipation total power dissipation T
amb
25 °C
junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C
- see Table 8 and 9
[1]
-40W
[2]
- 310 mW
[3]
- 550 mW
2
.

6. Thermal characteristics

Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to ambient
R
th(j-sp)
thermal resistance from junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm [3] Soldering point of cathode tab

7. Characteristics

Table 7. Characteristics
Tj=25°C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
F
[1] Pulse test: tp≤ 300 μs; δ≤0.02
forward voltage IF=10mA
=100mA
I
F
in free air
[1]
--400K/W
[2]
--230K/W
[3]
--55K/W
2
.
[1]
--0.9V
[1]
--1.1V
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 3 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 8. Characteristics per type; PZU2.4B to PZU5.6B3
=25°C unless otherwise specified
T
j
PZU
Sel Working
xxx
voltage
(V);
V
Z
=5mA
I
Z
Maximum differential resistance
(Ω)
r
dif
Reverse current
(μA)
I
R
T emperature coefficient
(mV/K);
S
Z
=5mA
I
Z
Diode capacitance
[1]
(pF)
C
d
Non-repetitive peak reverse current I
Min Max IZ=0.5mA IZ=5mA Max VR(V) Typ Max Max
2.4 B 2.3 2.6 1000 100 50 1 1.6 450 8
2.7 B 2.5 2.9 1000 100 20 1 2.0 440 8 B1 2.5 2.75 B2 2.65 2.9
3.0 B 2.80 3.20 1000 95 10 1 2.1 425 8 B1 2.80 3.05 B2 2.95 3.20
3.3 B 3.10 3.50 1000 95 5 1 2.4 410 8 B1 3.10 3.35 B2 3.25 3.50
3.6 B 3.40 3.80 1000 90 5 1 2.4 390 8 B1 3.40 3.65 B2 3.55 3.80
3.9 B 3.70 4.10 1000 90 3 1 2.5 370 8 B1 3.70 3.97 B2 3.87 4.10
4.3 B 4.01 4.48 1000 90 3 1 2.5 350 8 B1 4.01 4.21 B2 4.15 4.34 B3 4.28 4.48
4.7 B 4.42 4.90 800 80 2 1 1.4 325 8 B1 4.42 4.61 B2 4.55 4.75 B3 4.69 4.90
5.1 B 4.84 5.37 250 60 2 1.5 0.3 300 5.5 B1 4.84 5.04 B2 4.98 5.20 B3 5.14 5.37
5.6 B 5.31 5.92 100 40 1 2.5 1.9 275 5.5 B1 5.31 5.55 B2 5.49 5.73 B3 5.67 5.92
ZSM
(A)
[2]
[1] f = 1 MHz; VR=0V
= 100 μs; square wave; Tj=25°C prior to surge
[2] t
p
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 4 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 9. Characteristics per type; PZU6.2B to PZU36B
=25°C unless otherwise specified
T
j
PZU
Sel Working
xxx
voltage
(V);
V
Z
=5mA
I
Z
Maximum differential resistance
(Ω)
r
dif
Reverse current
(nA)
I
R
T emperature coefficient
(mV/K);
S
Z
=5mA
I
Z
Diode capacitance
[1]
(pF)
C
d
Non-repetitive peak reverse current I
Min Max IZ=0.5mA IZ=5mA Max VR(V) Typ Max Max
6.2 B 5.86 6.53 80 30 500 3 2.7 250 5.5 B1 5.86 6.12 B2 6.06 6.33 B3 6.26 6.53
6.8 B 6.47 7.14 60 20 500 3.5 3.4 215 5.5 B1 6.47 6.73 B2 6.65 6.93 B3 6.86 7.14
7.5 B 7.06 7.84 60 10 500 4 4.0 170 3.5 B1 7.06 7.36 B2 7.28 7.60 B3 7.52 7.84
8.2 B 7.76 8.64 60 10 500 5 4.6 150 3.5 B1 7.76 8.10 B2 8.02 8.36 B3 8.28 8.64
9.1 B 8.56 9.55 60 10 500 6 5.5 120 3.5 B1 8.56 8.93 B2 8.85 9.23 B3 9.15 9.55
10 B 9.45 10.55 60 10 100 7 6.4 110 3.5
B1 9.45 9.87 B2 9.77 10.21 B3 10.11 10.55
11 B 10.44 11.56 60 10 100 8 7.4 108 3
B1 10.44 10.88 B2 10.76 11.22 B3 11.10 11.56
12 B 1 1.42 12.60 80 10 100 9 8.4 105 3
B1 11.42 11.90 B2 11.74 12.24 B3 12.08 12.60
13 B 12.47 13.96 80 10 100 10 9.4 103 2.5
B1 12.47 13.03 B2 12.91 13.49 B3 13.37 13.96
14 B2 13.70 14.30 80 10 100 11 10.4 101 2
ZSM
(A)
[2]
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 5 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package
Table 9. Characteristics per type; PZU6.2B to PZU36B
…continued
Tj=25°C unless otherwise specified
PZU xxx
Sel Working
voltage
(V);
V
Z
=5mA
I
Z
Maximum differential resistance
(Ω)
r
dif
Reverse current
(nA)
I
R
T emperature coefficient
(mV/K);
S
Z
=5mA
I
Z
Diode capacitance
[1]
(pF)
C
d
Non-repetitive peak reverse current I
Min Max IZ=0.5mA IZ=5mA Max VR(V) Typ Max Max
15 B 13.84 15.52 80 15 50 11 11.4 99 2
B1 13.84 14.46 B2 14.34 14.98 B3 14.85 15.52
16 B 15.37 17.09 80 20 50 12 12.4 97 1.5
B1 15.37 16.01 B2 15.85 16.51 B3 16.35 17.09
18 B 16.94 19.03 80 20 50 13 14.4 93 1.5
B1 16.94 17.70 B2 17.56 18.35 B3 18.21 19.03
20 B 18.86 21.08 100 20 50 15 16.4 88 1.5
B1 18.86 19.70 B2 19.52 20.39 B3 20.21 21.08
22 B 20.88 23.17 100 25 50 17 18.4 84 1.3
B1 20.88 21.77 B2 21.54 22.47 B3 22.23 23.17
24 B 22.93 25.57 120 30 50 19 20.4 80 1.3
B1 22.93 23.96 B2 23.72 24.78 B3 24.54 25.57
27 B 25.1 28.9 150 40 50 21 23.4 73 1 30 B 28 32 200 40 50 23 26.6 66 1 33 B 31 35 250 40 50 25 29.7 60 0.9 36 B 34 38 300 60 50 27 33.0 59 0.8
ZSM
(A)
[2]
[1] f = 1 MHz; VR=0V
= 100 μs; square wave; Tj=25°C prior to surge
[2] t
p
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 6 of 12
NXP Semiconductors
mbg781
mgl273
PZUxB series
Single Zener diodes in a SOD323F package
300
I
F
(mA)
200
100
0
0.6 10.8 VF (V)
Tj=25°C PZU2.4B to PZU4.3B
Fig 1. Forward current as a function of forward
voltage; typical values
mgl274
S
Z
(mV/K)
10
12
11
10
5
0
9.1
8.2
7.5
6.8
6.2
5.6
5.1
4.7
0
S
Z
(mV/K)
1
2
3
060
=25°C to 150 °C
T
j
20 40
4.3
3.9
2.4
2.7
3.3
I
3.6
Z
3.0
(mA)
Fig 2. Temperature coefficient as a function of
working current; typical values
006aaa687
P
tot
(mW)
400
300
200
100
5 02016
4812
I
Z
(mA)
PZU4.7B to PZU12B
=25°C to 150 °C
T
j
Fig 3. Temperature coefficient as a function of
Fig 4. Power derating curve
0
0 20015050 100
FR4 PCB, standard footprint
T
(°C)
amb
working current; typical values
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 7 of 12
NXP Semiconductors

8. Package outline

PZUxB series
Single Zener diodes in a SOD323F package
Fig 5. Package outline SOD323F (SC-90)

9. Packing information

Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PZU2.4B to PZU36B
0.5
0.3
0.80
0.65
0.25
0.10
04-09-13Dimensions in mm
[1]
2.7
2.3
1.8
1.6
1.35
1.15
1
2
0.40
0.25
3000 10000
SOD323F 4 mm pitch, 8 mm tape and reel -115 -135
[1] For further information and the availability of packing methods, see Section 14.

10. Soldering

3.05
2.80
2.10
1.60
1.65
0.50 (2×)
0.500.95
001aab169
0.60
Reflow soldering is the only recommended soldering method. Dimensions in mm
Fig 6. Reflow soldering footprint SOD323F (SC-90)
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 8 of 12
solder lands
solder resist
occupied area
solder paste
NXP Semiconductors
8

11. Mounting

PZUxB series
Single Zener diodes in a SOD323F package
0.6
Dimensions in mm
43.4
0.6
0.6
0.6
0.5
006aaa487
40
Dimensions in mm
0.6
43.4
10
0.6
10
0.5
PCB thickness = 1.6 mm PCB thickness = 1.6 mm
Fig 7. FR4 PCB, standard footprint Fig 8. FR4 PCB, mounting pad for
cathode 1cm
2
40
006aaa48
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 9 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package

12. Revision history

Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PZUXB_SER_2 200 91115 Product data sheet - PZUXB_SER_1 Modifications:
PZUXB_SER_1 200 60307 Product data sheet - -
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical content.
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 10 of 12
NXP Semiconductors
PZUxB series
Single Zener diodes in a SOD323F package

13. Legal information

13.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition

13.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permane nt damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.
, including those pertaining to warranty,

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PZUXB_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 15 November 2009 11 of 12
NXP Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Packing information . . . . . . . . . . . . . . . . . . . . . 8
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
PZUxB series
Single Zener diodes in a SOD323F package
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 November 2009
Document identifier: PZUXB_SER_2
Loading...