PNP high-voltage transistor in a medium power and flat lead SOT89 (SC-62)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PXTA42.
1.2Features and benefits
High breakdown voltage
AEC-Q101 qualified
Medium power and flat lead SMD plastic package
1.3Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4Quick reference data
Table 1.Quick reference data
SymbolParameterConditionsMinTypMaxUnit
V
I
I
h
CEO
C
CM
FE
collector-emitter voltageopen base--300V
collector current--100mA
peak collector current--200mA
DC current gainVCE= 10 V;
= 10 mA
I
C
40--
NXP Semiconductors
321
sym079
1
2
3
2. Pinning information
Table 2.Pinning
PinDescriptionSimplified outlineGraphic symbol
1emitter
2collector
3base
3. Ordering information
Table 3.Ordering information
Type numberPackage
PXT A92SC-62plastic surface-mounted package; exposed die pad
PXTA92
300 V, 100 mA PNP high-voltage transistor
NameDescriptionVersion
SOT89
for good heat transfer; 3 leads
4. Marking
Table 4.Marking codes
Type numberMarking code
PXTA92*2D
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 5.Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
SymbolParameterConditionsMinMaxUnit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 6 cm
[1]
collector-base voltageopen emitter-300V
collector-emitter voltageopen base-300V
emitter-base voltageopen collector-5V
collector current-100mA
peak collector current-200mA
peak base current-100mA
total power dissipationT
Product data sheetRev. 6 — 27 September 2011 2 of 9
NXP Semiconductors
6. Thermal characteristics
Table 6.Thermal characteristics
SymbolParameterConditionsMinTypMaxUnit
R
th(j-a)
thermal resistance from
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
7. Characteristics
Table 7.Characteristics
T
=25C unless otherwise specified.
amb
SymbolParameterConditionsMinTypMaxUnit
I
CBO
I
EBO
h
V
V
f
T
C
FE
CEsat
BEsat
c
collector-base cut-off
current
emitter-base cut-off
current
DC current gainVCE= 10 V; IC= 1mA25--
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequencyVCE= 20 V;
collector capacitance VCB= 20 V;
PXTA92
300 V, 100 mA PNP high-voltage transistor
in free air
VCB= 200 V; IE=0A--250nA
VEB= 3V; IC=0A--100nA
= 10 V;
V
CE
IC= 10 mA
= 10 V;
V
CE
= 30 mA
I
C
IC= 20 mA; IB= 2mA--500mV
IC= 20 mA; IB= 2mA--900mV
= 10 mA;
I
C
f = 100 MHz
IE=ie=0A; f=1MHz
[1]
--96K/W
--16K/W
40--
25--
50--MHz
--6pF
8. Test information
8.1Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Product data sheetRev. 6 — 27 September 2011 6 of 9
NXP Semiconductors
PXTA92
300 V, 100 mA PNP high-voltage transistor
13. Legal information
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Document status
Objective [short] data sheetDevelopmentThis document contains data from the objective specification for product development.
Preliminary [short] data sheet QualificationThis document contains data from the preliminary specification.
Product [short] data sheetProductionThis document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition
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