NXP PXTA92 Schematic [ru]
SOT89
PXTA92
300 V, 100 mA PNP high-voltage transistor
Rev. 6 — 27 September 2011 Product data sheet
1. Product profile
1.1 General description
PNP high-voltage transistor in a medium power and flat lead SOT89 (SC-62)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PXTA42.
1.2 Features and benefits
High breakdown voltage
AEC-Q101 qualified
Medium power and flat lead SMD plastic package
1.3 Applications
Electronic ballast for fluorescent lighting
LED driver for LED chain module
High Intensity Discharge (HID) front lighting
Automotive motor management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
I
I
h
CEO
C
CM
FE
collector-emitter voltage open base - - 300 V
collector current - - 100 mA
peak collector current - - 200 mA
DC current gain VCE= 10 V;
= 10 mA
I
C
40 - -
NXP Semiconductors
321
sym079
1
2
3
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1emitter
2 collector
3base
3. Ordering information
Table 3. Ordering information
Type number Package
PXT A92 SC-62 plastic surface-mounted package; exposed die pad
PXTA92
300 V, 100 mA PNP high-voltage transistor
Name Description Version
SOT89
for good heat transfer; 3 leads
4. Marking
Table 4. Marking codes
Type number Marking code
PXTA92 *2D
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
j
T
amb
T
stg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 6 cm
[1]
collector-base voltage open emitter - 300 V
collector-emitter voltage open base - 300 V
emitter-base voltage open collector - 5V
collector current - 100 mA
peak collector current - 200 mA
peak base current - 100 mA
total power dissipation T
amb
25 C
[1]
- 1300 mW
junction temperature - 1 50 C
ambient temperature 65 +150 C
storage temperature 65 +150 C
2
.
PXTA92 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 27 September 2011 2 of 9
NXP Semiconductors
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
R
th(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
7. Characteristics
Table 7. Characteristics
T
=25C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
EBO
h
V
V
f
T
C
FE
CEsat
BEsat
c
collector-base cut-off
current
emitter-base cut-off
current
DC current gain VCE= 10 V; IC= 1mA 25 - -
collector-emitter
saturation voltage
base-emitter
saturation voltage
transition frequency VCE= 20 V;
collector capacitance VCB= 20 V;
PXTA92
300 V, 100 mA PNP high-voltage transistor
in free air
VCB= 200 V; IE=0A - - 250 nA
VEB= 3V; IC=0A - - 100 nA
= 10 V;
V
CE
IC= 10 mA
= 10 V;
V
CE
= 30 mA
I
C
IC= 20 mA; IB= 2mA - - 500 mV
IC= 20 mA; IB= 2mA - - 900 mV
= 10 mA;
I
C
f = 100 MHz
IE=ie=0A; f=1MHz
[1]
--96K/W
--16K/W
40 - -
25 - -
50 - - MHz
--6pF
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PXTA92 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 27 September 2011 3 of 9
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