NXP PMV 32UP NXP Datasheet

SOT23

PMV32UP

20 V, 4 A P-channel Trench MOSFET

Rev. 1 — 11 March 2011 Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.

1.2 Features and benefits

 1.8 V drain-source on-state resistance

rated

 Very fast switching
 Trench MOSFET technology

1.3 Applications

 Relay driver
 High-speed line driver

 High-side loadswitch
 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

I

D

Static characteristics

R

DSon

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm

drain-source
voltage

gate-source
voltage

drain current VGS=-4.5V; T

drain-source
on-state
resistance

2

.

Tj=25°C ---20V

-8 - 8 V

=25°C

amb

VGS=-4.5V; ID=-2.4A;
T

=25°C

j

[1]

---4A

- 3236mΩ

NXP Semiconductors

12

3

017aaa094

S

D

G

2. Pinning information

PMV32UP

20 V, 4 A P-channel Trench MOSFET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate
2Ssource
3 D drain

SOT23 (TO-236AB)

3. Ordering information

Table 3. Ordering information

Type number Package

PMV32UP TO-236AB plastic surface-mounted package; 3 leads SOT23

Name Description Version

4. Marking

Table 4. Marking codes

Type number Marking code

PMV32UP NF%

[1]

[1] % = placeholder for manufacturing site code

PMV32UP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 11 March 2011 2 of 15

NXP Semiconductors

Tj (°C)

−75 17512525 75−25

017aaa123

40

80

120

P

der

(%)

0

Tj (°C)

−75 17512525 75−25

017aaa124

40

80

120

I

der

(%)

0

5. Limiting values

PMV32UP

20 V, 4 A P-channel Trench MOSFET

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

P

tot

T

j

T

amb

T

stg

Source-drain diode

I

S

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

drain-source voltage Tj=25°C - -20 V
gate-source voltage -8 8 V
drain current VGS=-4.5V; T

=-4.5V; T

V

GS

peak drain current T
total power dissipation T

= 25 °C; single pulse; tp≤ 10 µs - -16 A

amb

=25°C

amb

= 25 °C - 4150 mW

T

sp

amb
amb

=25°C
=100°C

[1]
[1]

[2]
[1]

--4A

--2.5A

- 510 mW

- 930 mW

junction temperature -55 150 °C
ambient temperature -55 150 °C
storage temperature -65 150 °C

source current T

amb

=25°C

[1]

--1A

Fig 1. Normalized total power dissipation as a

function of junction temperature

PMV32UP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 11 March 2011 3 of 15

Fig 2. Normalized continuous drain current as a

function of junction temperature

NXP Semiconductors

017aaa139

–1

–10

–1

–10

–10

2

I

D

(A)

–10

–2

VDS (V)

10

–1

10

2

101

(1)

(2)

(3)

(4)
(5)

Limit R

DSon

= VDS/I

D

(6)

PMV32UP

20 V, 4 A P-channel Trench MOSFET

IDM = single pulse
(1) tp = 100 µs
(2) t

= 1 ms

p

(3) t

= 10 ms

p

(4) DC; Tsp = 25 °C
(5) t

= 100 ms

p

(6) DC; T

= 25 °C; drain mounting pad 6 cm

amb

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source

voltage

2

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance
from junction to
ambient

R

th(j-sp)

thermal resistance
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm

in free air

[1]
[2]

- 207 245 K/W

- 117 135 K/W

- 2530K/W

2

.

PMV32UP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 11 March 2011 4 of 15

NXP Semiconductors

017aaa140

tp (s)

10

–3

10

2

10

3

10110

–2

10

–1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

duty cycle = 1

017aaa141

tp (s)

10

–1

10

2

10

3

10110

–2

10

–1

10

2

10

10

3

Z

th(j-a)

(K/W)

1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

duty cycle = 1

PMV32UP

20 V, 4 A P-channel Trench MOSFET

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 6 cm

2

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

PMV32UP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 1 — 11 March 2011 5 of 15