NXP PMGD780SN Schematic [ru]

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132

G1S

msd901

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Rev. 02 — 19 April 2010 Product data sheet

1. Product profile

1.1 General description

Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.

1.2 Features and benefits

 Surface-mounted package  Footprint 40 % smaller than SOT23  Standard level threshold voltage  Fast switching  Low on-state resistance  Dual device

1.3 Applications

 Driver circuits  Switching in portable appliances

1.4 Quick reference data

 V  P

≤ 60 V  ID≤ 0.49 A

≤ 0.41 W  R

tot

2. Pinning information

Table 1. Pinning - SOT363 (SC-88), simplified outline and symbol

Pin Description Simplified outline Graphic symbol

1 source1 (S1)

2 gate1 (G1)

3 drain2 (D2)

4 source2 (S2)

5 gate2 (G2)

6 drain1 (D1)

≤ 920 mΩ

DSon

SOT363 (SC-88)

NXP Semiconductors

3. Ordering information

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Table 2. Ordering information

Type number Package

PMGD780SN SC-88 plastic surface-mounted package; 6 leads SOT363

Name Description Ver s ion

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

Source-drain diode

drain-source voltage 25 °C ≤ Tj≤ 150 °C-60V

drain-gate voltage 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -60V

gate-source voltage - ±20 V

drain current Tsp=25°C; VGS=10V; Figure 2 and 3

peak drain current Tsp=25°C; pulsed; tp≤ 10 μs; Figure 3

total power dissipation Tsp=25°C; Figure 1 -0.41W

storage temperature −55 +150 °C

junction temperature −55 +150 °C

source current Tsp=25°C

peak source current Tsp=25°C; pulsed; tp≤ 10 μs

[1]

-0.49A

=100°C; VGS=10V; Figure 2

[1]

-0.31A

[1]

-0.99A

[1]

-0.34A

[1]

-0.69A

[1] Single device conducting.

Product data sheet Rev. 02 — 19 April 2010 2 of 14

NXP Semiconductors

Tsp (°C)

0 20015050 100

03aa17

120

der

(%)

Tsp (°C)

0 20015050 100

03aa25

120

der

(%)

der

tot

tot 25 C°()

------------ -----------

100%×=

der

D25C

()

------------ -------

100%×=

03an22

-3

-2

-1

1 10 10

VDS(V)

(A)

10 ms

Limit R

DSon

= V

/ I

1 ms

tp = 10 μs

100 ms

100 μs

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Fig 1. Normalized total power dissipation as a

function of solder point temperature

Fig 2. Normalized continuous drain current as a

function of solder point temperature

Tsp=25°C; IDM is single pulse; VGS=10V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Product data sheet Rev. 02 — 19 April 2010 3 of 14

NXP Semiconductors

03an28

-4

-3

-2

-1

1 10

tp (s)

th(j-sp)

(K/W)

single pulse

= 0.5

0.2

0.1

0.05

0.02

δ =

5. Thermal characteristics

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-sp)

thermal resistance from junction to solder point Figure 4 - - 300 K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

Product data sheet Rev. 02 — 19 April 2010 4 of 14

NXP Semiconductors

6. Characteristics

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Table 5. Characteristics

=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

drain-source breakdown voltage ID= 250 μA; VGS=0V

=25°C 60--V

= −55 °C 55--V

gate-source threshold voltage ID= 0.25 mA; VDS=VGS; Figure 9

Tj=25°C 122.5V

=150°C0.6−−V

= −55 °C −−3.5 V

DSS

GSS

DSon

drain leakage current VDS=60V; VGS=0V

=25°C-0.051μA

=150°C - - 100 μA

gate leakage current VGS= ±20 V; VDS= 0 V - 10 100 nA

drain-source on-state resistance VGS=10V; ID=0.3A; Figure 7 and 8

Tj=25°C - 780 920 mΩ

=150°C - 1445 1700 mΩ

= 4.5 V; ID=0.075A; Figure 7 and 8 -11001400mΩ

Dynamic characteristics

d(on)

d(off)

G(tot)

iss

oss

rss

total gate charge ID=1A; VDD=30V; VGS=10V; Figure 13 -1.05-nC

gate-source charge - 0.2 - nC

gate-drain charge - 0.22 - nC

input capacitance VGS=0V; VDS= 30 V; f = 1 MHz; Figure 11 -23-pF

output capacitance - 5 - pF

reverse transfer capacitance - 3.5 - pF

turn-on delay time VDD=30V; RL=30Ω; VGS=10V; RG=6Ω -2-ns

rise time -4-ns

turn-off delay time - 5 - ns

fall time -2.2-ns

Source-drain diode

source-drain voltage IS= 0.3 A; VGS=0V; Figure 12 - 0.83 1.2 V

Product data sheet Rev. 02 — 19 April 2010 5 of 14

NXP Semiconductors

03an88

0.5

1.5

0123

(V)

(A)

3.5

4.5

VGS (V) = 3

03an90

0.2

0.4

0.6

0.8

012345

(V)

(A)

Tj = 150 °C 25 °C

03an89

0 0.2 0.4 0.6 0.8 1

(A)

DSon

(Ω)

4.5

VGS (V) = 3.5

Tj (°C)

−60 180120060

03aa28

1.2

0.6

1.8

2.4

DSon

DS o n 25 C°()

------------ -----------------

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

Tj=25°C

=25°C and 150 °C; VDS> ID× R

DSon

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7. Drain-source on-state resistance as a function

Product data sheet Rev. 02 — 19 April 2010 6 of 14

of drain current; typical values

Fig 8. Normalized drain-source on-state resistance

as a function of junction temperature

NXP Semiconductors

Tj (°C)

−60 180120060

03aa34

1.2

0.6

1.8

2.4

GS(th)

(V)

typ

min

03an32

1E-8

1E-7

-6

-5

-4

-3

0 0.5 1 1.5 2 2.5

(V)

(A)

min typ

03an92

-1

1 10 10

VDS (V)

(pF)

iss

oss

rss

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

ID=0.25mA; VDS=V

Fig 9. Gate-source threshold voltage as a function of

junction temperature

Fig 10. Sub-threshold drain current as a function of

Tj=25°C; VDS=5V

gate-source voltage

VGS=0V; f=1MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values

Product data sheet Rev. 02 — 19 April 2010 7 of 14

NXP Semiconductors

03an91

0.2

0.4

0.6

0.8

0 0.3 0.6 0.9 1.2

(V)

(A)

Tj = 25 °C

150 °C

VGS = 0 V

03an93

0 0.3 0.6 0.9 1.2

(nC)

(V)

ID = 1 A T

= 25 °C

= 30 V

Tj=25°C and 150 °C; VGS=0V ID=1A; VDD=30V

Fig 12. Source current as a function of source-drain

voltage; typical values

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Fig 13. Gate-source voltage as a function of gate

charge; typical values

Product data sheet Rev. 02 — 19 April 2010 8 of 14

NXP Semiconductors

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC JEDEC JEITA

SOT363 SC-88

wBM

pin 1 index

detail X

v M

0 1 2 mm

scale

132

456

Plastic surface-mounted package; 6 leads SOT363

UNIT

max

Qywv

0.1

0.30

0.20

2.2

1.8

0.25

0.10

1.35

1.15

0.65

1.3

2.2

2.0

0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

0.25

0.15

1.1

0.8

04-11-08 06-03-16

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

7. Package outline

Fig 14. Package outline SOT363 (SC-88)

Product data sheet Rev. 02 — 19 April 2010 9 of 14

NXP Semiconductors

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35

0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

8. Soldering

Fig 15. Reflow soldering footprint SOT363 (SC-88)

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Product data sheet Rev. 02 — 19 April 2010 10 of 14

NXP Semiconductors

Dual N-channel μTrenchMOS standard level FET

PMGD780SN

9. Revision history

Table 6. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PMGD780SN_2 20100419 Product data sheet - PMGD780SN_1

Modifications:

PMGD780SN_1 20040211 Product data - -

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Table 5 “Characteristics”: added V

• Section 10 “Legal information”: updated

maximum value at condition Tj=25°C

GS(th)

Product data sheet Rev. 02 — 19 April 2010 11 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

10. Legal information

10.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

10.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer ’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer ’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

, unless otherwise

Product data sheet Rev. 02 — 19 April 2010 12 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

10.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

11. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 02 — 19 April 2010 13 of 14

NXP Semiconductors

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

10.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

11 Contact information . . . . . . . . . . . . . . . . . . . . . 13

12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

PMGD780SN

Dual N-channel μTrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 April 2010

Document identifier: PMGD780SN_2

NXP PMGD780SN Schematic [ru]

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Limiting values

5. Thermal characteristics

6. Characteristics

7. Package outline

8. Soldering

9. Revision history

10. Legal information

10.1 Data sheet status

10.2 Definitions

10.3 Disclaimers

10.4 Trademarks

11. Contact information

12. Contents