NXP PMEG 4010BEA NXP Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

PMEGXX10BEA;
PMEGXX10BEV

1 A very low V

F

barrier rectifier

Product data sheet
Supersedes data of 2004 Apr 02

MEGA Schottky

2004 Jun 14

NXP Semiconductors Product data sheet

1

12

2

8

1
5

4

1 A very low VF MEGA Schottky
barrier rectifier

FEATURES

• Forward current: 1 A

• Reverse voltages: 20 V, 30 V, 40 V

• Very low forward voltage

• Ultra small and very small plastic SMD package

• Power dissipation comparable to SOT23.

APPLICATIONS

• High efficiency DC-to-DC conversion

• Voltage clamping

• Protection circuits

• Low voltage rectification

• Blocking diodes

• Low power consumption applications.

DESCRIPTION

PMEGXX10BEA;

PMEGXX10BEV

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

I

F

V

R

PINNING

PMEGXX10BEA (see Fig.1)

PMEGXX10BEV (see Fig.2)

forward current 1 A
reverse voltage 20; 30; 40 V

PIN DESCRIPTION

1 cathode
2 anode

1, 2, 5, 6 cathode

3, 4 anode

Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.

MARKING

T YPE NUMBER MARKING CODE

PMEG2010BEA V1
PMEG3010BEA V2
PMEG4010BEA V3
PMEG2010BEV G6
PMEG3010BEV G5
PMEG4010BEV G4

1

sym00

The marking bar indicates the cathode.

Fig.1 Simplified outline (SOD323; SC-76) and

symbol.

456

,2
,6

123

3,

sym03

Fig.2 Simplified outline (SOT666) and symbol.

2004 Jun 14 2

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky
barrier rectifier

PMEGXX10BEA;

PMEGXX10BEV

ORDERING INFORMATION

PACKAGE

T YPE NUMBER

NAME DESCRIPTION VERSION

PMEGXX10BEA − plastic surface mounted package; 2 leads SOD323
PMEGXX10BEV plastic surface mounted package; 6 leads SOT666

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

R

continuous reverse voltage

PMEG2010BEA/PMEG2010BEV − 20 V
PMEG3010BEA/PMEG3010BEV − 30 V
PMEG4010BEA/PMEG4010BEV − 40 V

I

F

I

FRM

I

FSM

T
T
T

j
amb
stg

continuous forward current Ts ≤ 55 °C; note 1 − 1 A
repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A
non-repetitive peak forward current tp = 8 ms; square wave;

2

note

− 10 A

junction temperature note 3 − 150 °C
operating ambient temperature note 3 −65 +150 °C
storage temperature −65 +150 °C

Notes

1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.

2. Only valid if pins 3 and 4 are connected in parallel (SOT666 packag e).

3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P

are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and I

R

F(AV)

rating will be available on request.

2004 Jun 14 3

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky
barrier rectifier

PMEGXX10BEA;

PMEGXX10BEV

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

PMEGXX10BEA (SOD323)

R

R

th(j-a)

th(j-s)

thermal resistance from junction to
ambient

thermal resistance from junction to

in free air; notes 1 and 2 450 K/W
in free air; notes 2 and 3 210 K/W
note 4 90 K/W

soldering point

PMEGXX10BEV (SOT666)

R

R

th(j-a)

th(j-s)

thermal resistance from junction to
ambient

thermal resistance from junction to

in free air; notes 2 and 5 405 K/W
in free air; notes 2 and 6 215 K/W
note 4 80 K/W

soldering point

Notes

1. Refer to SOD323 (SC-76) standard mounting conditions.

2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses

are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and I

P

R

F(AV)

rating will be available on request.

3. Device mounted on an FR4 printed-circuit board with copp er clad 10 × 10 mm.

4. Solder point of cathode tab.

5. Refer to SOT666 standard mounting conditions.

6. Only valid if pins 3 and 4 are connected in parallel (SOT666 packag e).

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS

V

F

forward voltage IF = 0.1 mA 90 130 90 130 95 130 mV

IF = 1 mA 150 190 150 200 155 210 mV
IF = 10 mA 210 240 215 250 220 270 mV
IF = 100 mA 280 330 285 340 295 350 mV
IF = 500 mA 355 390 380 430 420 470 mV
IF = 1 000 mA 420 500 450 560 540 640 mV

I

R

continuous
reverse current

VR = 10 V; note 1 15 40 12 30 7 20 μA
VR = 20 V; note 1 40 200 − − − − μA
VR = 30 V; note 1 − − 40 150 − − μA
VR = 40 V; note 1 − − − − 30 100 μA

C

d

diode capacitance VR = 1 V; f = 1 MHz 66 80 55 70 43 50 pF

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

PMEG2010BEA/

PMEG2010BEV

PMEG3010BEA/

PMEG3010BEV

PMEG4010BEA/

PMEG4010BEV

TYP. MAX. TYP. MAX. TYP. MAX.

UNIT

2004 Jun 14 4

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky
barrier rectifier

GRAPHICAL DATA

4

10

handbook, halfpage

I

F

(mA)

3

10

2

10

10

1

−1

10

PMEG2010BEA/PMEG2010BEV

(1) T

= 150 °C.

amb

(2) T

= 85 °C.

amb

(3) T

= 25 °C.

amb

(1) (2) (3)

0.20

0.4

MHC673

VF (V)

0.6

5

10

handbook, halfpage

I

R

(μA)

4

10

3

10

2

10

10

1

PMEG2010BEA/PMEG2010BEV

(1) T

= 150 °C.

amb

(2) T

= 85 °C.

amb

(3) T

= 25 °C.

amb

PMEGXX10BEA;

PMEGXX10BEV

MHC674

(1)

(2)

(3)

V

R (V)

20105015

Fig.3 Forward current as a function of forward

voltage; typical values.

140

C

handbook, halfpage

d

(pF)

120

100

80

60

40

20

0

0 5 10 20

PMEG2010BEA/PMEG2010BEV

T

= 25 °C; f = 1 MHz.

amb

MHC675

15

VR (V)

Fig.4 Reverse current as a function of reverse

voltage; typical values.

4

10

handbook, halfpage

I

F

(mA)

3

10

2

10

10

1

−1

10

PMEG3010BEA/PMEG3010BEV

(1) T

= 150 °C.

amb

= 85 °C.

(2) T

amb

(3) T

= 25 °C.

amb

(1) (2) (3)

0.20

0.4

MHC676

VF (V)

0.6

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

Fig.6 Forward current as a function of forward

voltage; typical values.

2004 Jun 14 5

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky
barrier rectifier

5

10

I

R

(μA)

4

10

3

10

2

10

10

1

PMEG3010BEA/PMEG3010BEV

(1) T

= 150 °C.

amb

(2) T

= 85 °C.

amb

(3) T

= 25 °C.

amb

(1)

(2)

(3)

1050202515

MHC677

V

R (V)

30

120

handbook, halfpage

C

d

(pF)

100

80

60

40

20

0

0 5 10 20

PMEG3010BEA/PMEG3010BEV

T

= 25 °C; f = 1 MHz.

amb

PMEGXX10BEA;

PMEGXX10BEV

MHC678

15

VR (V)

Fig.7 Reverse current as a function of reverse

voltage; typical values.

4

10

handbook, halfpage

I

F

(mA)

3

10

2

10

10

1

−1

10

PMEG4010BEA/PMEG4010BEV

(1) T

= 150 °C.

amb

(2) T

= 85 °C.

amb

(3) T

= 25 °C.

amb

(1) (2) (3)

0.20

0.4

MHC679

VF (V)

0.6

Fig.8 Diode capacitance as a function of reverse

voltage; typical values.

V

MHC680

R (V)

5

10

handbook, halfpage

I

R

(μA)

4

10

3

10

2

10

10

1

PMEG4010BEA/PMEG4010BEV

(1) T

= 150 °C.

amb

(2) T

= 85 °C.

amb

(3) T

= 25 °C.

amb

(1)

(2)

(3)

402010030

Fig.9 Forward current as a function of forward

voltage; typical values.

Fig.10 Revers e current as a function of reverse

voltage; typical values.

2004 Jun 14 6

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky
barrier rectifier

15

MHC681

VR (V)

100

handbook, halfpage

C

d

(pF)

80

60

40

20

0

0 5 10 20

PMEG4010BEA/PMEG4010BEV

T

= 25 °C; f = 1 MHz.

amb

PMEGXX10BEA;

PMEGXX10BEV

Fig.11 Diode capacitance as a function of reverse

voltage; typical values.

2004 Jun 14 7

NXP Semiconductors Product data sheet

3

P

1 A very low VF MEGA Schottky
barrier rectifier

PMEGXX10BEA;

PMEGXX10BEV

PACKAGE OUTLINES

lastic surface-mounted package; 2 leads

D

A

E

X

M

H

D

vA

SOD32

(1)

01

DIMENSIONS (mm are the original dimensions)

A

1

b

UNIT

A

max

1.1

mm 0.05

0.8

Note

1. The marking bar indicates the cathode

OUTLINE

VERSION

SOD323 SC-76

c D E H

p

0.40

0.25

1.8

0.25

0.10

IEC JEDEC JEITA

1.6

1.35

1.15

D

2.7

2.3

REFERENCES

21

L

0.45

0.15

Q

b

p

scale

Q

0.25

0.15

v

0.2

p

A

A

2 mm

1

L

detail X

EUROPEAN

PROJECTION

p

c

ISSUE DATE

03-12-17

06-03-16

2004 Jun 14 8

NXP Semiconductors Product data sheet

6

1 A very low VF MEGA Schottky
barrier rectifier

PMEGXX10BEA;

PMEGXX10BEV

Plastic surface-mounted package; 6 leads SOT66

D

S

YS

A

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

A

0.6

0.5

0.27

0.17

p

cD

0.18

0.08

b

1

1.7

1.5

p

e

E

1.3

1.1

456

A

w M

A

0 1 2 mm

scale

e

H

L

1.0

e

1

E

1.7

0.5

1.5

0.3

0.1

p

w

0.1y0.1

detail X

c

L

p

OUTLINE

VERSION

SOT666

REFERENCES

IEC JEDEC JEITA

EUROPEAN

PROJECTION

ISSUE DATE

04-11-08
06-03-16

2004 Jun 14 9

NXP Semiconductors Product data sheet

1 A very low VF MEGA Schottky
barrier rectifier

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or comple ting a design.

2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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use in medical, military, aircraft, space or life support
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

PMEGXX10BEA;

PMEGXX10BEV

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2004 Jun 14 10

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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Printed in The Netherlands R76/04/pp11 Date of release: 200 4 Jun 14 Document order number: 9397 750 13234