NXP PMBT5401 Schematic [ru]
DATA SH EET
, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PMBT5401
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBT5401
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 150 V).
APPLICATIONS
• Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
complement: PMBT5550.
NPN
MARKING
T YPE NUMBER MARKING CODE
(1)
PMBT5401 *2L
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMBT5401 − plastic sur f a ce mounted package; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −160 V
collector-emitter voltage open base − −150 V
emitter-base voltage open collector − −5 V
collector current (DC) − −300 mA
peak collector current − −600 mA
peak base current − −100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21 2
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBT5401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
thermal resistance from junction to ambient note 1 500 K/W
collector-base cut-off curren t IE = 0; VCB = −120 V − −50 nA
IE = 0; VCB = −120 V; T
= 150 °C − −50 µA
amb
emitter-base cut-off current IC = 0; VEB = −4 V − −50 nA
DC current gain VCE = −5 V; (see Fig.2)
IC = −1 mA 50 −
IC = −10 mA 60 240
IC = −50 mA 50 −
collector-emitter saturation voltage IC = −10 mA; IB = −1 mA − −200 mV
IC = −50 mA; IB = −5 mA − −500 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −1 mA − −1 V
IC = −50 mA; IB = −5 mA − −1 V
collector capacitance IE =Ie = 0; VCB = −10 V; f = 1 MHz − 6 pF
transition frequency IC = −10 mA; VCE = −10 V;
= 100 MHz; T
f
amb
= 25 °C
100 300 MHz
− 8 dB
f
= 10 Hz to 15.7 kHz; T
amb
= 25 °C
2004 Jan 21 3
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