DATA SH EET
, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PMBT5401
PNP high-voltage transistor
Product data sheet
Supersedes data of 1999 Apr 15
2004 Jan 21
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBT5401
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 150 V).
APPLICATIONS
• Switching and amplification in high voltage applications
such as telephony.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
complement: PMBT5550.
NPN
MARKING
T YPE NUMBER MARKING CODE
(1)
PMBT5401 *2L
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
21
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
3
1
2
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PMBT5401 − plastic sur f a ce mounted package; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −160 V
collector-emitter voltage open base − −150 V
emitter-base voltage open collector − −5 V
collector current (DC) − −300 mA
peak collector current − −600 mA
peak base current − −100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 21 2
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBT5401
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
f
T
F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
thermal resistance from junction to ambient note 1 500 K/W
collector-base cut-off curren t IE = 0; VCB = −120 V − −50 nA
IE = 0; VCB = −120 V; T
= 150 °C − −50 µA
amb
emitter-base cut-off current IC = 0; VEB = −4 V − −50 nA
DC current gain VCE = −5 V; (see Fig.2)
IC = −1 mA 50 −
IC = −10 mA 60 240
IC = −50 mA 50 −
collector-emitter saturation voltage IC = −10 mA; IB = −1 mA − −200 mV
IC = −50 mA; IB = −5 mA − −500 mV
base-emitter saturation vo ltage IC = −10 mA; IB = −1 mA − −1 V
IC = −50 mA; IB = −5 mA − −1 V
collector capacitance IE =Ie = 0; VCB = −10 V; f = 1 MHz − 6 pF
transition frequency IC = −10 mA; VCE = −10 V;
= 100 MHz; T
f
amb
= 25 °C
100 300 MHz
− 8 dB
f
= 10 Hz to 15.7 kHz; T
amb
= 25 °C
2004 Jan 21 3
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBT5401
200
handbook, full pagewidth
h
FE
150
100
50
0
−1
−10
−1 −10 −10
Fig.2 DC current gain; typical values.
VCE = −5 V
2
IC mA
MGD813
−10
3
2004 Jan 21 4
NXP Semiconductors Product data sheet
3
PNP high-voltage transistor PMBT5401
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w
M
B
E
H
E
detail X
AB
Q
L
p
X
v
M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
cD
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
0.95
H
L
Qwv
1
2.5
2.1
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 21 5
NXP Semiconductors Product data sheet
PNP high-voltage transistor PMBT5401
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
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regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Jan 21 6
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/04/pp7 Date of release: 2004 Jan 21 Document order number: 9397 750 12502
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