ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PLVA6xxA series
Low-voltage avalanche regulator
diodes
Product data sheet
Supersedes data of 1999 May 25
2004 Jan 14
NXP Semiconductors Product data sheet
Low-voltage avalanche regulator diodes PLVA6xxA series
FEATURES
• Very low dynamic impedance at low currents:
1
⁄
approximately
of conventional series
20
• Hard breakdown knee
• Low noise: approximately
1
⁄
of conventional series
10
• Total power dissipation: max. 250 mW
• Small tolerances of V
Z
• Working voltage range: nominal 5.00 to 6.80 V
• Non-repetitive peak reverse power dissipation:
maximal
30 W.
APPLICATIONS
• Low current, low power, low noise applications
• CMOS RAM back-up circuits
• Voltage stabilizers
• Voltage limiters
• Smoke detector relays.
DESCRIPTION
High performance voltage regulator diodes in small
SOT23 plastic SMD packages.
PINNING
PIN DESCRIPTION
1 anode
2 not connected
3 cathode
handbook, halfpage
21
2
n.c.
3
Fig.1 Simplified outline (SOT23) and symbol.
1
3
MAM243
The series consists of PLVA650A to PLVA668A.
MARKING
TYPE NUMBER MARKING CODE
PL VA650A *9A
PL VA653A *9B
PL VA656A *9C
PL VA659A *9D
PL VA662A *9E
PL VA665A *9F
PL VA668A *9G
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
(1)
2004 Jan 14 2
NXP Semiconductors Product data sheet
Low-voltage avalanche regulator diodes PLVA6xxA series
ORDERING INFORMATION
TYPE
NUMBER
NAME DESCRIPTION VERSION
PACKAGE
PLVA6xxA − plastic surface mounted package; 3 leads SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating Sys tem (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZRM
P
P
T
T
ZSM
tot
stg
j
continuous forward current − 250 mA
repetitive peak working current tp = 100 μs; δ = 10% − 250 mA
non-repetitive peak reverse power dissipation tp = 100 μs; Tj = 150 °C − 30 W
total power dissipation T
= 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 14 3