NXP PESD5V2S2UT Datasheet

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com

Instead of [e-mail] or [e-mail], use
[e-mail] (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:

- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:

- © Nexperia B.V. (year). All rights reserved.

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via [e-mail]). Thank you for your cooperation and
understanding,

Kind regards,

Team Nexperia

DATA SH EET

DISCRETE SEMICONDUCTORS

PESDxS2UT series

Double ESD protection diodes in
SOT23 package

Product data sheet
Supersedes data of 2003 Aug 20

2004 Apr 15

NXP Semiconductors Product data sheet

2

1

3

0

Double ESD protection diodes in SOT23
package

FEATURES

• Uni-directional ESD protection of up to two lines

• Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs

• Low clamping voltage: V

• Ultra-low reverse leakage curre nt: IRM < 700 nA

• ESD protection > 23 kV

• IEC 61000-4-2; level 4 (ESD)

• IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

APPLICATIONS

• Computers and peripherals

• Communication systems

• Audio and video equipment

• High speed data lines

• Parallel ports.

= 20 V at Ipp = 18 A

(CL)R

PESDxS2UT series

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT

V

RWM

C

d

PINNING

reverse stand-off
voltage

diode capacitance

= 0 V;

V

R

= 1 MHz

f
number of

3.3, 5.2, 12, 15
and 24

207, 152, 38, 32
and 23

2

protected lines

PIN DESCRIPTION

1 cathode 1
2 cathode 2
3 common anode

V

pF

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.

MARKING

T YPE NUMBER MARKING CODE

(1)

PESD3V3S2UT *U9
PESD5V2S2UT *U1
PESD12VS2UT *U2
PESD15VS2UT *U3
PESD24VS2UT *U4

Note

1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.

1

3

2

001aaa49

sym022

Fig.1 Simplified outline (SOT23) and symbol.

2004 Apr 15 2

NXP Semiconductors Product data sheet

Double ESD protection diodes in SOT23

PESDxS2UT series

package

ORDERING INFORMATION

T YPE NUMBER

PESD3V3S2UT − plastic surface mounted package; 3 leads SOT23
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

P

pp

I

pp

T

j

T

amb

T

stg

peak pulse power 8/20 µs pulse; notes 1 and 2

PESD3V3S2UT − 330 W
PESD5V2S2UT − 260 W
PESD12VS2UT − 180 W
PESD15VS2UT − 160 W
PESD24VS2UT − 160 W

peak pulse current 8/20 µs pulse; notes 1 and 2

PESD3V3S2UT − 18 A
PESD5V2S2UT − 15 A
PESD12VS2UT − 5 A
PESD15VS2UT − 5 A

PESD24VS2UT − 3 A
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C

NAME DESCRIPTION VERSION

PACKAGE

Notes

1. Non-repetitive current pulse 8/20µ µs exponential decay waveform; see Fig.2.

2. Measured across either pins 1 and 3 or pins 2 and 3.

2004 Apr 15 3

NXP Semiconductors Product data sheet

1

1

t

Double ESD protection diodes in SOT23

PESDxS2UT series

package

ESD maximum ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT

ESD electrostatic discharge

capability

Notes

1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.

2. Measured across either pins 1 and 3 or pins 2 and 3.

ESD standards compliance

IEC 61000-4-2 (contact discharge);

1 and 2

notes

PESD3V3S2UT 30 kV
PESD5V2S2UT 30 kV
PESD12VS2UT 30 kV
PESD15VS2UT 30 kV
PESD24VS2UT 23 kV

HBM MIL-Std 883

PESDxS2UT series 10 kV

ESD STANDARD CONDITIONS

IEC 61000-4-2; level 4 (ESD); see Fig.3 >15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 >4 kV

120

handbook, halfpage

I

pp

(%)

80

40

0

010

100 % Ipp; 8 µs

−t

e

20

50 % Ipp; 20 µs

MLE218

t (µs)

40

30

00 %
90 %

10 %

I

pp

tr = 0.7 to 1 ns

30 ns

60 ns

001aaa19

Fig.2 8/20 µs pulse waveform according to

IEC 61000-4-5.

Fig.3 ElectroStatic Discharge (ESD) pulse

waveform according to IEC 61000-4-2.

2004 Apr 15 4

NXP Semiconductors Product data sheet

Double ESD protection diodes in SOT23

PESDxS2UT series

package

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

I

V

C

V

RM

RWM

BR

d

(CL)R

reverse stand-off voltage

PESD3V3S2UT − − 3.3 V

PESD5V2S2UT − − 5.2 V

PESD12VS2UT − − 12 V

PESD15VS2UT − − 15 V

PESD24VS2UT − − 24 V
reverse leakage current

PESD3V3S2UT V

PESD5V2S2UT V

PESD12VS2UT V

PESD15VS2UT V

PESD24VS2UT V

= 3.3 V − 0.7 2 µA

RWM

= 5.2 V − 0.15 1 µA

RWM

= 12 V − <0.02 1 µA

RWM

= 15 V − <0.02 1 µA

RWM

= 24 V − <0.02 1 µA

RWM

breakdown voltage IZ = 5 mA

PESD3V3S2UT 5.2 5.6 6.0 V

PESD5V2S2UT 6.4 6.8 7.2 V

PESD12VS2UT 14.7 15.0 15.3 V

PESD15VS2UT 17.6 18.0 18.4 V

PESD24VS2UT 26.5 27.0 27.5 V
diode capacitance f = 1 MHz; VR = 0 V

PESD3V3S2UT − 207 300 pF

PESD5V2S2UT − 152 200 pF

PESD12VS2UT − 38 75 pF

PESD15VS2UT − 32 70 pF

PESD24VS2UT − 23 50 pF
clamping voltage notes 1 and 2

PESD3V3S2UT Ipp = 1 A − − 7 V

Ipp = 18 A − − 20 V

PESD5V2S2UT Ipp = 1 A − − 9 V

Ipp = 15 A − − 20 V

PESD12VS2UT Ipp = 1 A − − 19 V

Ipp = 5 A − − 35 V

PESD15VS2UT Ipp = 1 A − − 23 V

Ipp = 5 A − − 40 V

PESD24VS2UT Ipp = 1 A − − 36 V

Ipp = 3 A − − 70 V

2004 Apr 15 5

NXP Semiconductors Product data sheet

001aaa147

Double ESD protection diodes in SOT23

PESDxS2UT series

package

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

diff

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

GRAPHICAL DATA

4

10

differential resistance

PESD3V3S2UT IR = 1 mA − − 400 Ω

PESD5V2S2UT IR = 1 mA − − 80 Ω

PESD12VS2UT IR = 1 mA − − 200 Ω

PESD15VS2UT IR = 1 mA − − 225 Ω

PESD24VS2UT IR = 0.5 mA − − 300 Ω

1.2

001aaa193

P

pp

(W)

3

10

2

10

10

110

(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT

T

= 25 °C.

amb

tp = 8/20 µs exponential decay waveform; see Fig.2.

10 10

(1)

(2)

2

3

10

t

p

4

(µs)

P

P

PP(25°C)

PP

0.8

0.4

Fig.5 Relative variation of peak pulse power as a

Fig.4 Peak pulse power dissipation as a function

of pulse time; typical values.

0

0 20015050 100

Tj (°C)

function of junction temperature; typical
values.

2004 Apr 15 6

NXP Semiconductors Product data sheet

001aaa148

001aaa149

Double ESD protection diodes in SOT23
package

240

C

d

(pF)

200

160

120

80

40

054231

(1) PESD3V3S2UT; V
(2) PESD5V2S2UT; V

T

= 25 °C; f = 1 MHz.

amb

(1)

(2)

VR (V)

= 3.3 V.

RWM

= 5 V.

RWM

50

C

d

(pF)

40

30

20

10

0

0252010 155

(1) PESD12VS2UT; V
(2) PESD15VS2UT; V
(3) PESD24VS2UT; V

T

= 25 °C; f = 1 MHz.

amb

PESDxS2UT series

(1)
(2)

(3)

= 12 V.

RWM

= 15 V.

RWM

= 24 V.

RWM

VR (V)

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

2004 Apr 15 7

NXP Semiconductors Product data sheet

Double ESD protection diodes in SOT23
package

10

I

R

I

R(25˚C)

1

−1

10

−100 150100050−50

(1) PESD3V3S2UT; V

PESD5V2S2UT; V

RWM
RWM

(1)

= 3.3 V.
= 5 V.

001aaa270

Tj (°C)

PESDxS2UT series

IR is less than 10 nA at 150 °C for:
PESD12V52UT; V
PESD15VS2UT; V
PESD24VS2UT; V

RWM

RWM
RWM

= 12 V.

= 15 V.
= 24 V.

Fig.8 Relative variation of reverse leakage

current as a function of junction
temperature; typical values.

2004 Apr 15 8

NXP Semiconductors Product data sheet

2

G

G

Double ESD protection diodes in SOT23
package

ESD TESTER

R

Z

C

Z

note 1

Note 1: IEC61000-4-2 network
C

= 150 pF; RZ = 330 Ω

Z

vertical scale = 200 V/div
horizontal scale = 50 ns/div

450 Ω

D.U.T.: PESDxS2UT

RG 223/U
50 Ω coax

GND

10×

ATTENUATOR

PESDxS2UT series

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

vertical scale = 20 V/div
horizontal scale = 50 ns/div

PESD24VS2UT

GND

GND

GND

ND

GND

unclamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)

ND

unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)

vertical scale = 200 V/div
horizontal scale = 50 ns/div

clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)

GND

clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)

PESD15VS2UT

PESD12VS2UT

PESD5V2S2UT

PESD3V3S2UT

vertical scale = 10 V/div
horizontal scale = 50 ns/div

001aaa49

Fig.9 ESD clamping test set-up and waveforms.

2004 Apr 15 9

NXP Semiconductors Product data sheet

1

d

Double ESD protection diodes in SOT23

PESDxS2UT series

package

APPLICATION INFORMATION

The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal
polarities are below ground. PESDxS2UT series provide a surge capability of up to 330
waveform.

line 1 to be protected
line 2 to be protected

PESDxS2UT

ground

unidirectional protection

of two lines

bidirectional protection

line 1 to be protecte

PESDxS2UT

ground

of one line

Fig.10 Typical application: ESD protection of data lines.

W (Ppp) per line for an 8/20 µs

001aaa49

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:

• Place the PESDxS2UT as close as possible to the input terminal or connector.

• The path length between the PESDxS2UT and the protected line should be minimized.

• Keep parallel signal paths to a minimum.

• Avoid running protected conductors in paralle l with unprotected conductors.

• Minimize all printed-circuit board conductive loops including power and gr ound loops.

• Minimize the length of transient return paths to ground.

• Avoid using shared return paths to a common ground point.

• Ground planes should be used whenever possib le. For multilayer printed-circuit boards use ground vias .

2004 Apr 15 10

NXP Semiconductors Product data sheet

3

Double ESD protection diodes in SOT23

PESDxS2UT series

package

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2

D

3

E

H

E

AB

X

v

M

A

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

UNIT

A

max.

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

b

p

e

cD

3.0

2.8

w

M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

e

E

1.4

1.9

1.2

REFERENCES

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Apr 15 11

NXP Semiconductors Product data sheet

Double ESD protection diodes in SOT23

PESDxS2UT series

package

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document co ntains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT

STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2004 Apr 15 12

60134) may cause permanent damage to

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

Contact information

For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [e-mail]

© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccur ate a nd re li a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.

Printed in The Netherlands R76/03/pp13 Date of release: 2004 Apr 15 Document order number: 9397 750 12823