NXP PESD1FLEX Datasheet

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PESD1FLEX

FlexRay bus ESD protection diode

Rev. 02 — 15 February 2008 Product data sheet

1. Product profile

1.1 General description

PESD1FLEX in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package designed to protect two automotive FlexRay bus lines from the damage caused
by ElectroStatic Discharge (ESD) and other transients.

1.2 Features

n Due to the integrated diode structure only one small SOT23 package is needed to

protect two FlexRay bus lines

n Max. peak pulse power: PPP= 200 W at tp= 8/20 µs
n Low clamping voltage: VCL= 40 V at IPP=1A
n Ultra low leakage current: IRM<1nA
n Typ. diode capacitance matching: ∆Cd/Cd= 0.1 %
n ESD protection up to 23 kV
n IEC 61000-4-2, level 4 (ESD)
n IEC 61000-4-5 (surge); IPP= 3 A at tp= 8/20 µs
n Small SMD plastic package

1.3 Applications

n FlexRay bus protection
n Automotive applications

1.4 Quick reference data

Table 1. Quick reference data

T

=25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V
C

RWM
d

reverse standoff voltage - - 24 V
diode capacitance f = 5 MHz; VR=0V- 1117pF

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 cathode 1
2 cathode 2
3 common cathode

3. Ordering information

Table 3. Ordering information

Type number Package

PESD1FLEX - plastic surface-mounted package; 3 leads SOT23

PESD1FLEX

FlexRay bus ESD protection diode

3

12

Name Description Version

1

3

2

006aaa155

4. Marking

Table 4. Marking codes

Type number Marking code

PESD1FLEX ZJ*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per diode

P

PP

I

PP

Per device

T

j

T

amb

T

stg

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 3 or 2 to3.

[1]

peak pulse power tp= 8/20 µs
peak pulse current tp= 8/20 µs

[1][2]

- 200 W

[1][2]

-3A

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 2 of 12

NXP Semiconductors

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

Per diode

V

ESD

[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 3 or 2 to 3.

Table 7. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV

FlexRay bus ESD protection diode

electrostatic discharge voltage IEC 61000-4-2

(contact discharge)
MIL-STD-883 (human

body model)

PESD1FLEX

[1][2]

-23kV

-10kV

PP

; 20 µs

001aaa630

t (µs)

120

I

PP

(%)

80

40

0

0403010 20

100 % IPP; 8 µs

−t

e

50 % I

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

I

PP

100 %

90 %

10 %

tr = 0.7 ns to 1 ns

30 ns

60 ns

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

001aaa631

t

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 3 of 12

NXP Semiconductors

6. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per diode

V

RWM

I

RM

V

BR

C

d

∆C

d/Cd

V

CL

r

dif

[1] ∆Cdis the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured

between pin 2 and pin 3.
[2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[3] Measured from pin 1 to 3 or 2 to 3.

=25°C unless otherwise specified.

reverse standoff voltage - - 24 V
reverse leakage current V
breakdown voltage IR= 5 mA 25.4 27.8 30.3 V
diode capacitance f = 5 MHz; VR=0V - 1117pF
diode capacitance

matching

clamping voltage

differential resistance IR= 1 mA - - 300 Ω

PESD1FLEX

FlexRay bus ESD protection diode

=24V - <1 50 nA

RWM

[1]

f = 5 MHz; VR=0V - 0.1 - %
f = 5 MHz; V

IPP=1A --40V

=3A --70V

I

PP

= 2.5 V - 0.1 - %

R

[2][3]

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 4 of 12

NXP Semiconductors

PESD1FLEX

FlexRay bus ESD protection diode

10

006aaa257

3

(µs)

t

p

4

4

10

P

PP

(W)

3

10

2

10

10

110

T

amb

10 10

=25°C

2

Fig 3. Peak pulse power as a function of exponential

pulse duration; typical values

006aaa258

C

(pF)

20

d

16

001aaa193

Tj (°C)

P

P

PP(25°C)

1.2

PP

0.8

0.4

0

0 20015050 100

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

I

PP

12

8

4

0

0252010 155

f = 5 MHz; T

amb

=25°C

VR (V)

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

I

R

−VCL−VBR−V

RWM

I

RM

−I

RM

−I

R

−

−I

PP

V

RWM

+

V

006aaa676

Fig 6. V-I characteristics for a bidirectional ESD

protection diode

BR

V

CL

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 5 of 12

NXP Semiconductors

PESD1FLEX

FlexRay bus ESD protection diode

ESD TESTER

R

Z

C

Z

IEC 61000-4-2 network

= 150 pF; RZ = 330 Ω

C

Z

GND

unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

450 Ω

D.U.T.

(Device

Under

Test)

vertical scale = 200 V/div
horizontal scale = 50 ns/div

RG 223/U
50 Ω coax

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

10×

ATTENUATOR

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

Fig 7. ESD clamping test setup and waveforms

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

006aaa259

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 6 of 12

NXP Semiconductors

7. Application information

The PESD1FLEX is designed for the protection of two automotive FlexRaydata lines from
the damage caused by ESD and surge pulses. The device supports a FlexRay data rate
of 10 Mbit/s. The PESD1FLEX provides a surge capability of up to 200 W per line for an
8/20 µs waveform.

PESD1FLEX

FlexRay bus ESD protection diode

FlexRay

bus

PESD1FLEX

006aab053

BM

FlexRay

TRANSCEIVER

common

mode choke

(optional)

BP

R

T/2

R

T/2

C

G

21

3

Fig 8. Typical application: ESD protection of two automotive FlexRay bus lines

Circuit board layout and protection device placement:

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:

1. Place the PESD1FLEX as close to the input terminal or connector as possible.

2. The path length between the PESD1FLEX and the protected line should be
minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 7 of 12

NXP Semiconductors

8. Package outline

PESD1FLEX

FlexRay bus ESD protection diode

Fig 9. Package outline SOT23 (TO-236AB)

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PESD1FLEX SOT23 4 mm pitch, 8 mm tape and reel -215 -235

2.5

2.1

3.0

2.8

3

0.45

0.15

1.4

1.2

12

0.48

1.9

0.38

1.1

0.9

0.15

0.09

04-11-04Dimensions in mm

[1]

3000 10000

[1] For further information and the availability of packing methods, seeSection 13.

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 8 of 12

NXP Semiconductors

10. Soldering

PESD1FLEX

FlexRay bus ESD protection diode

2.90

2.50

12

3

0.60
(3x)

0.50 (3x)

0.60 (3x)

3.00

0.85

1.30

0.85

1.00

3.30

Fig 10. Reflow soldering footprint SOT23 (TO-236AB)

3.40

1.20 (2x)

4.004.60

1.20

21

3

2.70

sot023

solder lands
solder resist

solder paste

occupied area

Dimensions in mm

solder lands
solder resist
occupied area

Dimensions in mm

2.80

4.50

preferred transport direction during soldering

sot023

Fig 11. Wave soldering footprint SOT23 (TO-236AB)

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 9 of 12

NXP Semiconductors

FlexRay bus ESD protection diode

PESD1FLEX

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESD1FLEX_2 20080215 Product data sheet - PESD1FLEX_1
Modifications:

PESD1FLEX_1 20070521 Product data sheet - -

• Section 1.2 “Features”: list item for diode capacitance matching added

• Table 8 “Characteristics”: ∆C

diode capacitance matching added

d/Cd

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 10 of 12

NXP Semiconductors

12. Legal information

12.1 Data sheet status

PESD1FLEX

FlexRay bus ESD protection diode

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differin case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title.A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referenced brands,product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

PESD1FLEX_2 © NXP B.V. 2008. All rights reserved.

Product data sheet Rev. 02 — 15 February 2008 11 of 12

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

7 Application information. . . . . . . . . . . . . . . . . . . 7

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PESD1FLEX

FlexRay bus ESD protection diode

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2008. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 15 February 2008

Document identifier: PESD1FLEX_2