NXP PESD 15VL1BA Datasheet

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in
SOD323

Rev. 02 — 20 August 2009 Product data sheet

1. Product profile

1.1 General description

Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.

1.2 Features

n Bidirectional ESD protection of one line n ESD protection > 23 kV
n Max. peak pulse power: Ppp = 500 W n IEC 61000-4-2, level 4 (ESD)
n Low clamping voltage: V
n Ultra low leakage current: IRM < 0.09 µA n Very small SMD plastic package

= 26 V n IEC 61000-4-5 (surge); Ipp = 18 A

(CL)R

1.3 Applications

n Computers and peripherals n Data lines
n Communication systems n CAN bus protection
n Audio and video equipment

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

C

RWM

d

reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
diode capacitance VR = 0 V;

f=1MHz
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF

NXP Semiconductors

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 cathode 1
2 cathode 2

3. Ordering information

Table 3. Ordering information

Type number Package

PESDxL1BA series SC-76 plastic surface mounted package; 2 leads SOD323

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

21

Name Description Version

21

sym045

4. Marking

Table 4. Marking codes

Type number Marking code

PESD3V3L1BA AB
PESD5V0L1BA AC
PESD12VL1BA AD
PESD15VL1BA AE
PESD24VL1BA AF

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 2 of 15

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

pp

I

pp

T

j

T

amb

T

stg

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

peak pulse power 8/20 µs
PESD3V3L1BA - 500 W
PESD5V0L1BA - 500 W
PESD12VL1BA - 200 W
PESD15VL1BA - 200 W
PESD24VL1BA - 200 W
peak pulse current 8/20 µs
PESD3V3L1BA - 18 A
PESD5V0L1BA - 15 A
PESD12VL1BA - 5 A
PESD15VL1BA - 5 A
PESD24VL1BA - 3 A
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

[1]

[1]

Table 6. ESD maximum ratings

Symbol Parameter Conditions Min Max Unit

ESD electrostatic discharge capability IEC 61000-4-2

[1]

(contact discharge)
PESD3V3L1BA - 30 kV
PESD5V0L1BA - 30 kV
PESD12VL1BA - 30 kV
PESD15VL1BA - 30 kV
PESD24VL1BA - 23 kV
PESDxL1BA series HBM MIL-Std 883 - 10 kV

[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.

Table 7. ESD standards compliance

Standard Conditions

IEC 61000-4-2; level 4 (ESD);

Figure 2 > 15 kV (air); > 8 kV (contact)

HBM MIL-Std 883; class 3 > 4 kV

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 3 of 15

NXP Semiconductors

120

I

PP

(%)

100 % IPP; 8 µs

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

001aaa631

I

001aaa630

PP

100 %

90 %

80

40

0

0403010 20

−t

e

; 20 µs

50 % I

PP

t (µs)

Fig 1. 8/20 µs pulse waveform according to

IEC 61000-4-5

10 %

tr = 0.7 ns to 1 ns

30 ns

60 ns

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

t

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 4 of 15

NXP Semiconductors

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

6. Characteristics

Table 8. Characteristics

T

= 25°C unless otherwise specified

amb

Symbol Parameter Conditions Min Typ Max Unit

V

I

RM

V

C

V

RWM

(BR)

d

(CL)R

reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
reverse leakage current see Figure 7
PESD3V3L1BA V
PESD5V0L1BA V
PESD12VL1BA V
PESD15VL1BA V
PESD24VL1BA V

= 3.3 V - 0.09 2 µA

RWM

= 5.0 V - 0.01 1 µA

RWM

= 12 V - < 1 50 nA

RWM

= 15 V - < 1 50 nA

RWM

= 24 V - < 1 50 nA

RWM

breakdown voltage IR = 5 mA
PESD3V3L1BA 5.8 6.4 6.9 V
PESD5V0L1BA 7.0 7.6 8.2 V
PESD12VL1BA 14.2 15.9 16.7 V
PESD15VL1BA 17.1 18.9 20.3 V
PESD24VL1BA 25.4 27.8 30.3 V
diode capacitance VR = 0 V; f = 1 MHz;

see

Figure 5 and 6

PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
clamping voltage

[1]

PESD3V3L1BA Ipp = 1 A - - 8 V

= 18 A - - 26 V

I

pp

PESD5V0L1BA I

PESD12VL1BA I

PESD15VL1BA I

PESD24VL1BA I

= 1 A - - 10 V

pp

= 15 A - - 33 V

I

pp

= 1 A - - 20 V

pp

= 5A - - 37 V

I

pp

= 1 A - - 25 V

pp

= 5 A - - 44 V

I

pp

= 1 A - - 40 V

pp

= 3 A - - 70 V

I

pp

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 5 of 15

NXP Semiconductors

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

Table 8. Characteristics

T

= 25°C unless otherwise specified

amb

Symbol Parameter Conditions Min Typ Max Unit

r

dif

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.

differential resistance IR = 1 mA
PESD3V3L1BA - - 400 Ω
PESD5V0L1BA - - 80 Ω
PESD12VL1BA - - 200 Ω
PESD15VL1BA - - 225 Ω
PESD24VL1BA - - 300 Ω

…continued

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 6 of 15

NXP Semiconductors

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

10

006aaa066

3

(µs)

t

p

4

4

10

P

PP

(W)

3

10

(1)

2

10

10

110

T

amb

10 10

= 25 °C

(2)

2

tp = 8/20 µs exponential decay waveform; see Figure 1
(1) PESD3V3L1BA and PESD5V0L1BA
(2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA

Fig 3. Peak pulse power dissipation as a function of

pulse time; typical values

001aaa193

Tj (°C)

P

P

PP(25°C)

1.2

PP

0.8

0.4

0

0 20015050 100

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical
values

006aaa067

VR (V)

C

(pF)

110

d

100

90

80

70

60

50

054231

T

= 25 °C; f = 1 MHz

amb

(1)

(2)

(1) PESD3V3L1BA
(2) PESD5V0L1BA

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

006aaa068

(3)

VR (V)

C

(pF)

20

d

16

12

8

4

0

0252010 155

T

= 25 °C; f = 1 MHz

amb

(1)

(2)

(1) PESD12VL1BA
(2) PESD15VL1BA
(3) PESD24VL1BA

Fig 6. Diode capacitance as a function of reverse

voltage; typical values

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 7 of 15

NXP Semiconductors

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

006aaa069

(1)

Tj (°C)

I

RM

I

RM(25°C)

10

10

1

−1

−100 150100050−50

(1) PESD3V3L1BA; PESD5V0L1BA

For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C

Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 8 of 15

NXP Semiconductors

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

ESD TESTER

R

Z

C

Z

IEC 61000-4-2 network

= 150 pF; RZ = 330 Ω

C

Z

GND

unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

450 Ω

1

DUT: PESDxL1BA

2

vertical scale = 200 V/div
horizontal scale = 50 ns/div

RG 223/U
50 Ω coax

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

GND

GND

GND

GND

clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)

10×

ATTENUATOR

4 GHz DIGITAL

OSCILLOSCOPE

50 Ω

PESD24VL1BA

PESD15VL1BA

PESD12VL1BA

PESD5V0L1BA

PESD3V3L1BA

GND

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

Fig 8. ESD clamping test setup and waveforms

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

GND

GND

GND

GND

clamped −1 kV ESD voltage waveform
(IEC 61000-4-2 network)

PESD3V3L1BA

PESD5V0L1BA

PESD12VL1BA

PESD15VL1BA

PESD24VL1BA

006aaa070

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 9 of 15

NXP Semiconductors

7. Application information

The PESDxL1BA series is designed for bidirectional protection of one signal line from the
damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA
series may be used on lines where the signal polarity is above and below ground. The
PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs
waveform.

Fig 9. Typical application: Bidirectional protection of one signal line

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

line to be protected

PESDxL1BA

006aaa071

ground

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:

1. Place the protection device as close to the input terminal or connector as possible.

2. The path length between the protection device and the protected line should be
minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductor.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 10 of 15

NXP Semiconductors

8. Package outline

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

Plastic surface-mounted package; 2 leads

D

H

D

SOD323

A

X

M

vA

E

Q

21

(1)

01

DIMENSIONS (mm are the original dimensions)

A

A

1.1

0.8

max

1

b

c D E H

p

0.40

0.25

1.8

0.25

0.10

IEC JEDEC JEITA

1.6

1.35

1.15

D

2.7

2.3

REFERENCES

UNIT

mm 0.05

Note

1. The marking bar indicates the cathode

OUTLINE
VERSION

SOD323 SC-76

L

0.45

0.15

b

p

scale

Q

0.25

0.15

v

0.2

p

A

A

2 mm

1

L

detail X

EUROPEAN

PROJECTION

p

c

ISSUE DATE

03-12-17

06-03-16

Fig 10. Package outline SOD323 (SC-76)

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 11 of 15

NXP Semiconductors

9. Packing information

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PESDxL1BA series SOD323 4 mm pitch, 8 mm tape and reel -115 -135

[1] For further information and the availability of packing methods, seeSection 12.

[1]

3000 10000

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 12 of 15

NXP Semiconductors

Low capacitance bidirectional ESD protection diodes in SOD323

PESDxL1BA series

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PESDXL1BA_SER_2 20090820 Product data sheet - PESDXL1BA_SER_1
Modifications:

PESDXL1BA_SER_1 20041004 Product data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 10 “Package outline SOD323 (SC-76)”: updated

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 13 of 15

NXP Semiconductors

11. Legal information

11.1 Data sheet status

PESDxL1BA series

Low capacitance bidirectional ESD protection diodes in SOD323

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s) describedin this document may have changed since this documentwas publishedand maydiffer incase of multipledevices. The latest productstatus

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shallhave no liabilityfor theconsequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s) and title.A short data sheetis intended
for quickreference only andshould not be relied uponto contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does notgive any representations or
warranties, expressed orimplied,as to the accuracyor completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves theright to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocument supersedes and replaces allinformation supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC60134) may cause permanent
damage tothe device. Limitingvalues are stress ratingsonly and operationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditionsof commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance orimplication of any license under anycopyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks
are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 20 August 2009 14 of 15

NXP Semiconductors

Low capacitance bidirectional ESD protection diodes in SOD323

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Application information. . . . . . . . . . . . . . . . . . 10

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Packing information. . . . . . . . . . . . . . . . . . . . . 12

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12 Contact information. . . . . . . . . . . . . . . . . . . . . 14

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

PESDxL1BA series

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 20 August 2009

Document identifier: PESDXL1BA_SER_2