PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in
SOD323
Rev. 02 — 20 August 2009 Product data sheet
1. Product profile
1.1 General description
Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323
(SC-76) SMD plastic package designed to protect one signal line from the damage
caused by ESD and other transients.
1.2 Features
n Bidirectional ESD protection of one line n ESD protection > 23 kV
n Max. peak pulse power: Ppp = 500 W n IEC 61000-4-2, level 4 (ESD)
n Low clamping voltage: V
n Ultra low leakage current: IRM < 0.09 µA n Very small SMD plastic package
= 26 V n IEC 61000-4-5 (surge); Ipp = 18 A
(CL)R
1.3 Applications
n Computers and peripherals n Data lines
n Communication systems n CAN bus protection
n Audio and video equipment
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
C
RWM
d
reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
diode capacitance VR = 0 V;
f=1MHz
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 cathode 1
2 cathode 2
3. Ordering information
Table 3. Ordering information
Type number Package
PESDxL1BA series SC-76 plastic surface mounted package; 2 leads SOD323
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
21
Name Description Version
21
sym045
4. Marking
Table 4. Marking codes
Type number Marking code
PESD3V3L1BA AB
PESD5V0L1BA AC
PESD12VL1BA AD
PESD15VL1BA AE
PESD24VL1BA AF
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 2 of 15
NXP Semiconductors
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
pp
I
pp
T
j
T
amb
T
stg
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1.
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
peak pulse power 8/20 µs
PESD3V3L1BA - 500 W
PESD5V0L1BA - 500 W
PESD12VL1BA - 200 W
PESD15VL1BA - 200 W
PESD24VL1BA - 200 W
peak pulse current 8/20 µs
PESD3V3L1BA - 18 A
PESD5V0L1BA - 15 A
PESD12VL1BA - 5 A
PESD15VL1BA - 5 A
PESD24VL1BA - 3 A
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
[1]
[1]
Table 6. ESD maximum ratings
Symbol Parameter Conditions Min Max Unit
ESD electrostatic discharge capability IEC 61000-4-2
[1]
(contact discharge)
PESD3V3L1BA - 30 kV
PESD5V0L1BA - 30 kV
PESD12VL1BA - 30 kV
PESD15VL1BA - 30 kV
PESD24VL1BA - 23 kV
PESDxL1BA series HBM MIL-Std 883 - 10 kV
[1] Device stressed with ten non-repetitive ESD pulses; see Figure 2.
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD);
Figure 2 > 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3 > 4 kV
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 3 of 15
NXP Semiconductors
120
I
PP
(%)
100 % IPP; 8 µs
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
001aaa631
I
001aaa630
PP
100 %
90 %
80
40
0
0403010 20
−t
e
; 20 µs
50 % I
PP
t (µs)
Fig 1. 8/20 µs pulse waveform according to
IEC 61000-4-5
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 2. ESD pulse waveform according to
IEC 61000-4-2
t
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 4 of 15
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
6. Characteristics
Table 8. Characteristics
T
= 25°C unless otherwise specified
amb
Symbol Parameter Conditions Min Typ Max Unit
V
I
RM
V
C
V
RWM
(BR)
d
(CL)R
reverse stand-off voltage
PESD3V3L1BA - - 3.3 V
PESD5V0L1BA - - 5.0 V
PESD12VL1BA - - 12 V
PESD15VL1BA - - 15 V
PESD24VL1BA - - 24 V
reverse leakage current see Figure 7
PESD3V3L1BA V
PESD5V0L1BA V
PESD12VL1BA V
PESD15VL1BA V
PESD24VL1BA V
= 3.3 V - 0.09 2 µA
RWM
= 5.0 V - 0.01 1 µA
RWM
= 12 V - < 1 50 nA
RWM
= 15 V - < 1 50 nA
RWM
= 24 V - < 1 50 nA
RWM
breakdown voltage IR = 5 mA
PESD3V3L1BA 5.8 6.4 6.9 V
PESD5V0L1BA 7.0 7.6 8.2 V
PESD12VL1BA 14.2 15.9 16.7 V
PESD15VL1BA 17.1 18.9 20.3 V
PESD24VL1BA 25.4 27.8 30.3 V
diode capacitance VR = 0 V; f = 1 MHz;
see
Figure 5 and 6
PESD3V3L1BA - 101 - pF
PESD5V0L1BA - 75 - pF
PESD12VL1BA - 19 - pF
PESD15VL1BA - 16 - pF
PESD24VL1BA - 11 - pF
clamping voltage
[1]
PESD3V3L1BA Ipp = 1 A - - 8 V
= 18 A - - 26 V
I
pp
PESD5V0L1BA I
PESD12VL1BA I
PESD15VL1BA I
PESD24VL1BA I
= 1 A - - 10 V
pp
= 15 A - - 33 V
I
pp
= 1 A - - 20 V
pp
= 5A - - 37 V
I
pp
= 1 A - - 25 V
pp
= 5 A - - 44 V
I
pp
= 1 A - - 40 V
pp
= 3 A - - 70 V
I
pp
PESDXL1BA_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 5 of 15
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