NXP PDTC323TK Schematic [ru]
PDTC323TK
NPN 500 mA, 15 V resistor-equipped transistor;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 16 November 2009 Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistor (RET) in a small SOT346 (SC-59A) SMD
plastic package.
PNP complement: PDTA323TK.
1.2 Features
Built-in bias resistors Reduces component count
Simplifies circuit design Reduces pick and place costs
500 mA output current capability
1.3 Applications
Digital application in automotive and
industrial segments
Cost saving alternative for BC817 series
in digital applications
Controlling IC inputs Switching loads
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
collector-emitter voltage open base - - 15 V
output current - - 500 mA
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 input (base)
2 GND (emitter)
3 output (collector)
3. Ordering information
Table 3. Ordering information
Type number Package
PDTC323TK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
3
R1
1
12
sym012
Name Description Version
3
2
4. Marking
Table 4. Marking codes
Type number Marking code
PDTC323TK 57
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
V
I
I
O
P
tot
T
stg
T
j
T
amb
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
collector-base voltage open emitter - 30 V
collector-emitter voltage open base - 15 V
emitter-base voltage open collector - 5 V
input voltage
positive - +12 V
negative - −5V
output current - 500 mA
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 2 of 8
NXP Semiconductors
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
=25°C unless otherwise specified.
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
C
c
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain VCE=5V; IC= 50 mA 100 300 collector-emitter
saturation voltage
collector capacitance VCB=10V; IE=ie=0A;
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
in free air
VCB=30V; IE= 0 A - - 100 nA
VCE=15V; IB=0A - - 0.5 μA
VEB=5V; IC= 0 A - - 100 nA
IC=50mA; IB=2.5mA - 25 80 V
f=1MHz
[1]
--500K/W
-7-pF
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 3 of 8
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