PDTC323TK
NPN 500 mA, 15 V resistor-equipped transistor;
R1 = 2.2 kΩ, R2 = open
Rev. 02 — 16 November 2009 Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistor (RET) in a small SOT346 (SC-59A) SMD
plastic package.
PNP complement: PDTA323TK.
1.2 Features
Built-in bias resistors Reduces component count
Simplifies circuit design Reduces pick and place costs
500 mA output current capability
1.3 Applications
Digital application in automotive and
industrial segments
Cost saving alternative for BC817 series
in digital applications
Controlling IC inputs Switching loads
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
collector-emitter voltage open base - - 15 V
output current - - 500 mA
NXP Semiconductors
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 input (base)
2 GND (emitter)
3 output (collector)
3. Ordering information
Table 3. Ordering information
Type number Package
PDTC323TK SC-59A plastic surface mounted package; 3 leads SOT346
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
3
R1
1
12
sym012
Name Description Version
3
2
4. Marking
Table 4. Marking codes
Type number Marking code
PDTC323TK 57
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
V
I
I
O
P
tot
T
stg
T
j
T
amb
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
collector-base voltage open emitter - 30 V
collector-emitter voltage open base - 15 V
emitter-base voltage open collector - 5 V
input voltage
positive - +12 V
negative - −5V
output current - 500 mA
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 2 of 8
NXP Semiconductors
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7. Characteristics
=25°C unless otherwise specified.
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
C
c
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain VCE=5V; IC= 50 mA 100 300 collector-emitter
saturation voltage
collector capacitance VCB=10V; IE=ie=0A;
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
in free air
VCB=30V; IE= 0 A - - 100 nA
VCE=15V; IB=0A - - 0.5 μA
VEB=5V; IC= 0 A - - 100 nA
IC=50mA; IB=2.5mA - 25 80 V
f=1MHz
[1]
--500K/W
-7-pF
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 3 of 8
NXP Semiconductors
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
10
006aaa447
2
IC (mA)
3
10
3
10
h
FE
(1)
(2)
(3)
2
10
−1
10
110
VCE=5V
amb
amb
amb
= 100 °C
=25°C
= −40 °C
(1) T
(2) T
(3) T
Fig 1. DC current gain as a function of collector
current; typical values
006aaa448
(1)
(2)
(3)
2
101
IC (mA)
10
V
CEsat
−1
10
(V)
−2
10
(1) T
(2) T
(3) T
−1
10
=20
I
C/IB
= 100 °C
amb
=25°C
amb
= −40 °C
amb
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 4 of 8
NXP Semiconductors
8. Package outline
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
Fig 3. Package outline SOT346 (SC-59A/TO-236)
9. Packing information
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PDTC323TK SOT346 4 mm pitch, 8 mm tape and reel -115 -135
3.0
2.5
3.1
2.7
3
1.7
1.3
12
1.9
0.50
0.35
0.6
0.2
1.3
1.0
0.26
0.10
04-11-11Dimensions in mm
[1]
3000 10000
[1] For further information and the availability of packing methods, see Section 12.
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 5 of 8
NXP Semiconductors
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
10. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTC323TK_2 20091116 Product data sheet - PDTC323TK_1
Modifications:
PDTC323TK_1 20050603 Product data sheet - -
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 6 of 8
NXP Semiconductors
PDTC323TK
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
11. Legal information
11.1 Data sheet status
Document status
Objective [short] data sheet Development This document contains dat a from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains dat a from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
[1][2]
Product status
[3]
Definition
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC601 34) may ca use permane nt
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.
, including those pertaining to warranty,
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTC323TK_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 16 November 2009 7 of 8
NXP Semiconductors
NPN 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = open
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
9 Packing information . . . . . . . . . . . . . . . . . . . . . 5
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12 Contact information. . . . . . . . . . . . . . . . . . . . . . 7
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
PDTC323TK
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 November 2009
Document identifier: PDTC323TK_2
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