DATA SH EET
DISCRETE SEMICONDUCTORS
PDTA123E series
PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Product data sheet
Supersedes data of 2004 Apr 07
2004 Aug 02
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
PRODUCT OVERVIEW
PACKAGE
TYPE NUMBER
PHILIPS EIAJ
PDTA123EE SOT416 SC-75 5C PDTC123EE
PDTA123EEF SOT490 SC-89 6C PDTC123EEF
PDTA123EK SOT346 SC-59 42 PDTC123EK
PDTA123EM SOT883 SC-101 F7 PDTC123EM
PDTA123ES SOT54 (TO-92) SC-43 TA123E PDTC123ES
PDTA123ET SOT23 − *21
PDTA123EU SOT323 SC-70 *42
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
I
O
R1 bias resistor 2.2 − kΩ
R2 bias resistor 2.2 − kΩ
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
collector-emitter
voltage
output current (DC) − −100 mA
MARKING CODE NPN COMPLEMENT
(1)
(1)
− −50 V
PDTC123ET
PDTC123EU
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2004 Aug 02 2
NXP Semiconductors Product data sheet
MAM338
MDB267
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PDTA123ES 1 base
handbook, halfpage
1
2
3
R1
1
R2
2
3
PDTA123EE 1 base
PDTA123EEF 2 emitter
PDTA123EK 3 collector
handbook, halfpage
PDTA123ET
PDTA123EU
1
Top view
3
2
R1
1
R2
MDB271
3
2
PINNING
PIN DESCRIPTION
2 collector
3 emitter
PDTA123EM 1 base
2 emitter
handbook, halfpage
2
1
Bottom view
R1
3
1
R2
3
2
3 collector
2004 Aug 02 3
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
ORDERING INFORMATION
T YPE NUMBER
NAME DESCRIPTION VERSION
PDTA123EE − plastic surface mounted package; 3 leads SOT416
PDTA123EEF − plastic surface mounted package; 3 leads SOT490
PDTA123EK − plastic surface mounted package; 3 leads SOT346
PDTA123EM − leadless ultra small plastic package; 3 solder lands; body
x 0.6 x 0.5 mm
1.0
PDTA123ES − plastic single-ended leaded (through hole) package; 3 lea ds SOT54
PDTA123ET − plastic surface mounted package; 3 leads SOT23
PDTA123EU − plastic surface mounted package; 3 leads SOT323
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − −50 V
collector-emitter voltage open base − −50 V
emitter-base voltage open collector − −10 V
input voltage
positive − +10 V
negative − −12 V
I
I
P
O
CM
tot
output current (DC) − −100 mA
peak collector current − −100 mA
total power dissipation T
amb
≤ 25 °C
SOT54 note 1 − 500 mW
SOT23 note 1 − 250 mW
SOT346 note 1 − 250 mW
SOT323 note 1 − 200 mW
SOT416 note 1 − 150 mW
SOT490 notes 1 and 2 − 250 mW
SOT883 notes 2 and 3 − 250 mW
T
T
T
stg
j
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
PACKAGE
SOT883
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
2004 Aug 02 4
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
thermal resistance from junction to ambient T
amb
≤ 25 °C
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 830 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off curren t VCB = −50 V; IE = 0 A − − −100 nA
collector-emitter cut-off current VCE = −30 V; IB = 0 A − − −1 μA
VCE = −30 V; IB = 0 A; Tj = 150 °C − − −50 μA
I
EBO
h
V
V
V
FE
CEsat
i(off)
i(on)
emitter-base cut-off current VEB = −5 V; IC = 0 A − − −2 mA
DC current gain VCE = −5 V; IC = −20 mA 30 − −
collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV
input-off voltage IC = −1 mA; VCE = −5 V − −1.2 −0.5 V
input-on voltage IC = −20 mA; VCE = −0.3 V −2 −1.6 − V
R1 input resistor 1.54 2.2 2.86 kΩ
R2
------- R1
C
c
resistor ratio 0.8 1 1.2
collector capacitance IE = ie = 0 A; VCB = −10 V;
= 1 MHz
f
− − 3 pF
2004 Aug 02 5
NXP Semiconductors Product data sheet
6
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
PACKAGE OUTLINES
Plastic surface-mounted package; 3 leads SOT41
D
v
M
A
3
E
AB
X
H
E
12
e
b
1
p
e
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
0.95
mm
0.60
OUTLINE
VERSION
SOT416 SC-75
max
0.1
b
cD
p
0.30
0.25
0.10
1.8
1.4
0.15
IEC JEDEC JEITA
E
0.9
0.7
REFERENCES
w
e
1
A
M
B
0 0.5 1 mm
scale
e1H
0.5
1.75
1.45
L
p
E
0.45
0.15
A
1
L
p
detail X
v
Qw
0.23
0.13
0.2
0.2
EUROPEAN
PROJECTION
Q
c
ISSUE DATE
04-11-04
06-03-16
2004 Aug 02 6
NXP Semiconductors Product data sheet
0
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Plastic surface-mounted package; 3 leads SOT49
D
3
E
H
E
AB
X
v M
A
12
e
b
1
p
e
0 1 2 mm
DIMENSIONS (mm are the original dimensions)
UNIT b
A
0.8
0.6
0.33
0.23
mm
OUTLINE
VERSION
SOT490 SC-89
cD
p
0.2
1.7
1.5
0.95
0.75
0.1
IEC JEDEC JEITA
e
E
e
0.5
1.0
REFERENCES
1
w M
B
H
1.7
1.5
scale
E
L
0.5
0.3
A
c
L
p
detail X
0.1
wv
0.1
EUROPEAN
PROJECTION
ISSUE DATE
05-07-28
06-03-16
p
2004 Aug 02 7
NXP Semiconductors Product data sheet
6
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Plastic surface-mounted package; 3 leads SOT34
D
B
E
H
E
3
A
X
v
M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
1.3
1.0
A
1
0.1
0.013
b
p
0.50
0.26
0.35
0.10
IEC JEDEC JEITA
A
UNIT
mm
OUTLINE
VERSION
SOT346 TO-236 SC-59A
b
p
e
cD
3.1
2.7
0 1 2 mm
e
E
1.7
1.9
1.3
REFERENCES
w
M
e
0.95
B
scale
1
H
3.0
2.5
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.33
0.6
0.2
0.23
0.2
0.2
EUROPEAN
PROJECTION
ISSUE DATE
04-11-11
06-03-16
2004 Aug 02 8
NXP Semiconductors Product data sheet
L
3
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88
L
2
b
e
1
e
1
L
1
3
b
1
E
DIMENSIONS (mm are the original dimensions)
A
(1)
UNIT
A
0.50
mm
0.46
Note
1. Including plating thickness
OUTLINE
VERSION
SOT883 SC-101
max.
0.03
1
bb
0.20
0.12
IEC JEDEC JEITA
1
0.55
0.47
DE
0.62
0.55
eLL
1.02
0.35 0.65
0.95
REFERENCES
A
A
1
D
0 0.5 1 mm
scale
e
1
0.30
0.22
0.30
0.22
1
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
2004 Aug 02 9
NXP Semiconductors Product data sheet
4
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Plastic single-ended leaded (through hole) package; 3 leads SOT5
c
E
d
1
D
2
A L
b
e
1
e
3
b
1
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
5.2
mm
5.0
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54 TO-92 SC-43A
b
0.48
0.40
b
c
D
d
1.7
4.2
1.4
3.6
REFERENCES
E
2.54
1
0.66
0.45
0.38
4.8
4.4
0.55
IEC JEDEC JEITA
e
e
1
1.27
L
14.5
12.7
L
1
(1)
L
1
max.
2.5
EUROPEAN
PROJECTION
ISSUE DATE
04-06-28
04-11-16
2004 Aug 02 10
NXP Semiconductors Product data sheet
3
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Plastic surface-mounted package; 3 leads SOT2
D
3
E
H
E
AB
X
v
M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
b
p
e
cD
3.0
2.8
w
M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
E
1.4
1.9
1.2
REFERENCES
e
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Aug 02 11
NXP Semiconductors Product data sheet
3
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Plastic surface-mounted package; 3 leads SOT32
D
y
3
E
AB
X
H
E
v
M
A
12
e
b
1
p
e
DIMENSIONS (mm are the original dimensions)
A
1
mm
1.1
0.8
A
max
0.1
0.4
0.3
b
p
cD
0.25
2.2
0.10
1.8
UNIT
A
A
1
B
w
M
0 1 2 mm
scale
e
E
1.35
1.15
1.3
e1H
0.65
2.2
2.0
L
p
E
0.45
0.15
Qwv
0.23
0.13
detail X
Q
c
L
p
0.20.2
OUTLINE
VERSION
SOT323 SC-70
IEC JEDEC JEITA
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Aug 02 12
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
PDTA123E series
R1 = 2.2 kΩ, R2 = 2.2 kΩ
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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does not give any representations or warranties,
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published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
2004 Aug 02 13
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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under patent- or other industri al or intellectual property righ ts.
Printed in The Netherlands R75/07/pp14 Date of release: 2004 Aug 02 Document order number: 9397 750 13649
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