DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PBSS8110T
100 V, 1 A
NPN low V
Product data sheet
Supersedes data of 2003 Jul 28
CEsat
(BISS) transistor
2003 Dec 22
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
FEATURES
• SOT23 package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers
and motors).
(BISS) transistor
CEsat
CM
PBSS8110T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
handbook, halfpage
collector-emitter voltage 100 V
collector current (DC) 1 A
repetitive peak collector
current
equivalent on-resistance 200 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
3
1
21
Top view
MAM255
3 A
3
2
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
Fig.1 Simplified outline (SOT23) and symbol.
PNP complement: PBSS9110T.
MARKING
T YPE NUMBER MARKING CODE
(1)
PBSS8110T *U8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PBSS8110T − plastic surface mounted package; 3 leads SOT23
2003 Dec 22 2
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
Notes
1. Device mounted on a printed-circuit board, single sided copper , tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper , tinplated, mounting pad for collector 1 cm2.
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 100 V
emitter-base voltage open collector − 5 V
collector current (DC) − 1 A
peak collector current limited by T
base current (DC) − 300 mA
total power dissipation T
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
(BISS) transistor
CEsat
j max
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 480 mW
amb
− 3 A
500
handbook, halfpage
P
tot
(mW)
400
(1)
300
200
100
0
040
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
(2)
80 160
120
Fig.2 Power derating curves.
T
amb
MLE354
(°C)
2003 Dec 22 3
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th( j-a)
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
Z
(K/W)
thermal resistance from junction to
ambient
3
10
(1)
th
(2)
(3)
(4)
2
10
(5)
(6)
(7)
(8)
10
(9)
(BISS) transistor
CEsat
in free air; note 1 417 K/W
in free air; note 2 260 K/W
mle356
t
P
δ =
p
T
1
−5
10
(1) δ = 1.0.
(2) δ = 0.75.
t
p
(10)
−4
10
(3) δ = 0.5.
(4) δ = 0.03.
−3
10
(5) δ = 0.2.
(6) δ = 0.1.
−2
−1
10
(7) δ = 0.05.
(8) δ = 0.02.
1
(9) δ = 0.01.
(10)δ = 0.0.
1010
T
2
10
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
tp (s)
t
3
10
2003 Dec 22 4