NXP PBSS 8110T NXP Datasheet

DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PBSS8110T
100 V, 1 A NPN low V
Product data sheet Supersedes data of 2003 Jul 28
CEsat
(BISS) transistor
2003 Dec 22
NXP Semiconductors Product data sheet
100 V, 1 A NPN low V
CEsat

FEATURES

SOT23 package
Low collector-emitter saturation voltage V
High collector current capability: IC and I
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements.

APPLICATIONS

Major application segments – Automotive 42 V power – Telecom infrastructure – Industrial
Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting.
Peripheral drivers – Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers
and motors).
(BISS) transistor
CEsat
CM
PBSS8110T

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat

PINNING

handbook, halfpage
collector-emitter voltage 100 V collector current (DC) 1 A repetitive peak collector
current equivalent on-resistance 200 mΩ
PIN DESCRIPTION
1 base 2 emitter 3 collector
3
1
21
Top view
MAM255
3 A
3
2

DESCRIPTION

NPN low V
CEsat
transistor in a SOT23 plastic package.
Fig.1 Simplified outline (SOT23) and symbol.
PNP complement: PBSS9110T.

MARKING

T YPE NUMBER MARKING CODE
(1)
PBSS8110T *U8
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia. = W : Made in China.

ORDERING INFORMATION

PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PBSS8110T plastic surface mounted package; 3 leads SOT23
2003 Dec 22 2
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
Notes
1. Device mounted on a printed-circuit board, single sided copper , tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper , tinplated, mounting pad for collector 1 cm2.
collector-base voltage open emitter 120 V collector-emitter voltage open base 100 V emitter-base voltage open collector 5 V collector current (DC) 1 A peak collector current limited by T base current (DC) 300 mA total power dissipation T
junction temperature 150 °C operating ambient temperature −65 +150 °C storage temperature −65 +150 °C
(BISS) transistor
CEsat
j max
25 °C; note 1 300 mW
amb
T
25 °C; note 2 480 mW
amb
3 A
500
handbook, halfpage
P
tot
(mW)
400
(1)
300
200
100
0
040
(1) FR4 PCB; 1 cm2 copper mounting pad for collector. (2) Standard footprint.
(2)
80 160
120
Fig.2 Power derating curves.
T
amb
MLE354
(°C)
2003 Dec 22 3
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th( j-a)
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
Z
(K/W)
thermal resistance from junction to ambient
3
10
(1)
th
(2) (3) (4)
2
10
(5) (6)
(7)
(8)
10
(9)
(BISS) transistor
CEsat
in free air; note 1 417 K/W in free air; note 2 260 K/W
mle356
t
P
δ =
p
T
1
5
10
(1) δ = 1.0. (2) δ = 0.75.
t
p
(10)
4
10
(3) δ = 0.5. (4) δ = 0.03.
3
10
(5) δ = 0.2. (6) δ = 0.1.
2
1
10
(7) δ = 0.05. (8) δ = 0.02.
1
(9) δ = 0.01. (10)δ = 0.0.
1010
T
2
10
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
tp (s)
t
3
10
2003 Dec 22 4
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