DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
PBSS8110T
100 V, 1 A
NPN low V
Product data sheet
Supersedes data of 2003 Jul 28
CEsat
(BISS) transistor
2003 Dec 22
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
CEsat
FEATURES
• SOT23 package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers
and motors).
(BISS) transistor
CEsat
CM
PBSS8110T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
handbook, halfpage
collector-emitter voltage 100 V
collector current (DC) 1 A
repetitive peak collector
current
equivalent on-resistance 200 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
3
1
21
Top view
MAM255
3 A
3
2
DESCRIPTION
NPN low V
CEsat
transistor in a SOT23 plastic package.
Fig.1 Simplified outline (SOT23) and symbol.
PNP complement: PBSS9110T.
MARKING
T YPE NUMBER MARKING CODE
(1)
PBSS8110T *U8
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
∗ = W : Made in China.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PBSS8110T − plastic surface mounted package; 3 leads SOT23
2003 Dec 22 2
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
Notes
1. Device mounted on a printed-circuit board, single sided copper , tinplated, standard footprint.
2. Device mounted on a printed-circuit board, single sided copper , tinplated, mounting pad for collector 1 cm2.
collector-base voltage open emitter − 120 V
collector-emitter voltage open base − 100 V
emitter-base voltage open collector − 5 V
collector current (DC) − 1 A
peak collector current limited by T
base current (DC) − 300 mA
total power dissipation T
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
(BISS) transistor
CEsat
j max
≤ 25 °C; note 1 − 300 mW
amb
T
≤ 25 °C; note 2 − 480 mW
amb
− 3 A
500
handbook, halfpage
P
tot
(mW)
400
(1)
300
200
100
0
040
(1) FR4 PCB; 1 cm2 copper mounting pad for collector.
(2) Standard footprint.
(2)
80 160
120
Fig.2 Power derating curves.
T
amb
MLE354
(°C)
2003 Dec 22 3
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th( j-a)
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
Z
(K/W)
thermal resistance from junction to
ambient
3
10
(1)
th
(2)
(3)
(4)
2
10
(5)
(6)
(7)
(8)
10
(9)
(BISS) transistor
CEsat
in free air; note 1 417 K/W
in free air; note 2 260 K/W
mle356
t
P
δ =
p
T
1
−5
10
(1) δ = 1.0.
(2) δ = 0.75.
t
p
(10)
−4
10
(3) δ = 0.5.
(4) δ = 0.03.
−3
10
(5) δ = 0.2.
(6) δ = 0.1.
−2
−1
10
(7) δ = 0.05.
(8) δ = 0.02.
1
(9) δ = 0.01.
(10)δ = 0.0.
1010
T
2
10
Fig.3 Transient thermal impedance as a function of pulse time for standard PCB footprint.
tp (s)
t
3
10
2003 Dec 22 4
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
3
10
Z
th
(K/W)
(1)
(2)
2
10
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−5
10
(BISS) transistor
CEsat
−4
10
−3
10
PBSS8110T
mle355
t
P
t
p
T
−2
−1
10
1
1010
10
p
δ =
T
t
2
tp (s)
3
10
(1) δ = 1.0.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.03.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10)δ = 0.0.
Fig.4 Transient thermal impedance as a function of pulse time for collector 1 cm2 copper mounting pad.
2003 Dec 22 5
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CES
I
EBO
h
V
R
V
V
f
T
C
FE
CEsat
CEsat
BEsat
BEon
c
collector-base cut-off current VCB = 80 V; IE = 0 − − 100 nA
collector-emitter cut-off current VCE = 80 V; VBE = 0 − − 100 nA
emitter-base cut-off current VEB = 4 V; IC = 0 − − 100 nA
DC current gain VCE = 10 V; IC = 1 mA 150 − −
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA − − 40 mV
equivalent on-resistance IC = 1 A; IB = 100 mA; note 1 − 165 200 mΩ
base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.05 V
base-emitter turn-on voltage VCE = 10 V; IC = 1 A − − 0.9 V
transition frequency IC = 50 mA; VCE = 10 V;
collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 7.5 pF
(BISS) transistor
CEsat
VCB = 80 V; IE = 0; Tj = 150 °C − − 50 μA
VCE = 10 V; IC = 250 mA 150 − 500
VCE = 10 V; IC = 500 mA; note 1 100 − −
VCE = 10 V; IC = 1 A; note 1 80 − −
IC = 500 mA; IB = 50 mA − − 120 mV
IC = 1 A; IB = 100 mA; note 1 − − 200 mV
100 − − MHz
= 100 MHz
f
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2003 Dec 22 6
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
600
h
FE
400
200
0
−1
10
VCE = 10 V.
(1) T
amb
(2) T
amb
(3) T
amb
110
= 100 °C.
= 25 °C.
= −55 °C.
(BISS) transistor
CEsat
(1)
(2)
(3)
2
10
PBSS8110T
10
MLE362
3
IC (mA)
4
10
mle352
1.2
handbook, halfpage
V
BE
(V)
(1)
0.8
(2)
(3)
0.4
0
3
10
I
C
(mA)
4
10
−1
10
110
2
10
VCE = 10 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 100 °C.
amb
Fig.5 DC current gain as a function of collector
current; typical values.
MLE366
3
IC (mA)
V
CEsat
1
handbook, halfpage
(V)
−1
10
−2
10
−1
10
IC/IB = 10.
(1) T
= 100 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
(1)
(2)
(3)
11010210
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
MLE353
3
IC (mA)
4
10
V
CEsat
1
handbook, halfpage
(V)
−1
10
−2
10
4
10
−1
10
11010210
IC/IB = 20.
T
= 25 °C.
amb
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22 7
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
10
V
CEsat
(V)
1
−1
10
−2
10
−1
10
IC/IB = 50.
T
= 25 °C.
amb
110
(BISS) transistor
CEsat
−2
10
PBSS8110T
mle357
−3
10
I
C
(mA)
−4
10
10
handbook, halfpage
V
BEsat
(V)
1
−1
10
−1
10
IC/IB = 10.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 100 °C.
amb
(1)
(2)
(3)
11010210
MLE363
3
IC (mA)
4
10
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
V
BEsat
(V)
1
−1
10
−1
10
IC/IB = 20.
T
= 25 °C.
amb
11010210
MLE364
3
IC (mA)
Fig.10 Base-emitter satur ation v oltag e as a
function of collector current; typical values.
10
MLE365
3
IC (mA)
4
10
handbook, halfpage
4
10
1
V
BEsat
(V)
−1
10
10
IC/IB = 50.
T
= 25 °C.
amb
−1
10 10
2
10
Fig.11 Base-emitter satur ation v oltag e as a
function of collector current; typical values.
Fig.12 Base-emitter satur ation v oltag e as a
function of collector current; typical values.
2003 Dec 22 8
NXP Semiconductors Product data sheet
100 V, 1 A
NPN low V
2
I
C
(A)
1.6
1.2
0.8
0.4
0
05
= 25 °C.
T
amb
(1) IB = 3500 μA.
(2) IB = 3150 μA.
(3) IB = 2800 μA.
(4) IB = 2450 μA.
Fig.13 Collector c urrent as a function of
1234
collector-emitter voltage; typical values.
(BISS) transistor
CEsat
(2)
(5) IB = 2100 μA.
(6) IB = 1750 μA.
(7) IB = 1400 μA.
(8) IB = 1050 μA.
mle358
(1)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
V
(V)
CE
(9) IB = 700 μA.
(10)IB = 350 μA.
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
1
−1
10
10
IC/IB = 10.
(1) T
amb
(2) T
amb
(3) T
amb
Fig.14 Collector- emitter equivalent on-resistance
PBSS8110T
MLE359
(1)
(2)
(3)
−1
1
10 10
= 100 °C.
= 25 °C.
= −55 °C.
as a function of collector current; typical
values.
2
10
3
IC (mA)
10
4
3
10
handbook, halfpage
R
CEsat
MLE360
(Ω)
2
10
10
1
−1
10
−1
10
1
10 10
2
10
3
IC (mA)
IC/IB = 20.
T
= 25 °C.
amb
Fig.15 Collector- emitter equivalent on-resistance
as a function of collector current; typical
values.
3
10
handbook, halfpage
R
CEsat
MLE361
(Ω)
2
10
10
1
−1
4
10
10
−1
10
1
10 10
2
10
3
IC (mA)
4
10
IC/IB = 50.
T
= 25 °C.
amb
Fig.16 Collector- emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Dec 22 9
NXP Semiconductors Product data sheet
3
100 V, 1 A
PBSS8110T
NPN low V
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT2
(BISS) transistor
CEsat
D
E
H
E
AB
X
v
M
A
3
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
b
p
e
cD
3.0
2.8
w
M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2003 Dec 22 10
NXP Semiconductors Product data sheet
100 V, 1 A
PBSS8110T
NPN low V
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
(BISS) transistor
CEsat
PRODUCT
STATUS
(2)
development.
DEFINITION
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2003 Dec 22 11
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believed t o b e accur ate a nd reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R7 5/02/pp12 Date of release: 2003 Dec 22 Document order number: 9397 750 12008
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