查询PBSS4350SPN供应商
PBSS5350SS
50 V, 2.7 A PNP/PNP low V
Rev. 01 — 3 April 2007 Product data sheet
1. Product profile
1.1 General description
PNP/PNP double low V
power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package NPN/PNP
PBSS5350SS SOT96-1 SO8 PBSS4350SPN PBSS4350SS
1.2 Features
n Low collector-emitter saturation voltage V
n High collector current capability IC and I
n High collector current gain (hFE) at high I
n High efficiency due to less heat generation
n Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium
CEsat
NXP Name
(BISS) transistor
complement
CEsat
CM
C
NPN/NPN
complement
1.3 Applications
n Dual low power switches (e.g. motors, fans)
n Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CEO
I
C
I
CM
R
CEsat
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
collector-emitter voltage open base - - −50 V
collector current - - −2.7 A
peak collector current single pulse;
t
≤ 1ms
p
collector-emitter
saturation resistance
IC= −2A;
I
= −200 mA
B
--−5A
[1]
- 95 140 mΩ
NXP Semiconductors
PBSS5350SS
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
2 base TR1
3 emitter TR2
4 base TR2
5 collector TR2
6 collector TR2
7 collector TR1
8 collector TR1
3. Ordering information
Table 4. Ordering information
Type number Package
PBSS5350SS SO8 plastic small outline package; 8 leads; body width
50 V, 2.7 A PNP/PNP low V
8
1
5
4
(BISS) transistor
CEsat
8765
TR1 TR2
1234
006aaa976
Name Description Version
SOT96-1
3.9 mm
4. Marking
Table 5. Marking codes
Type number Marking code
PBSS5350SS 5350SS
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
collector-base voltage open emitter - −50 V
collector-emitter voltage open base - −50 V
emitter-base voltage open collector - −5V
collector current - −2.7 A
peak collector current single pulse;
t
≤ 1ms
p
- −5A
base current - −0.5 A
total power dissipation T
amb
≤ 25 °C
[1]
- 0.55 W
[2]
- 0.87 W
[3]
- 1.43 W
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 2 of 14
NXP Semiconductors
PBSS5350SS
Table 6. Limiting values
50 V, 2.7 A PNP/PNP low V
…continued
(BISS) transistor
CEsat
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation T
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
amb
≤ 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
2.5
P
tot
(W)
2.0
(1)
[1]
- 0.75 W
[2]
- 1.2 W
[3]
-2W
006aaa967
1.5
(2)
1.0
0.5
0
−75 17512525 75−25
(3)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
T
(°C)
amb
2
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 3 of 14
NXP Semiconductors
PBSS5350SS
6. Thermal characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
50 V, 2.7 A PNP/PNP low V
in free air
in free air
[1]
- - 227 K/W
[2]
- - 144 K/W
[3]
--87K/W
--40K/W
[1]
- - 167 K/W
[2]
- - 104 K/W
[3]
--63K/W
(BISS) transistor
CEsat
006aaa809
2
10
tp (s)
3
10
Z
th(j-a)
(K/W)
10
3
10
2
10
10
1
−1
10
duty cycle =
−5
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−4
10
−3
10
−2
−1
10
1
1010
FR4 PCB, standard footprint
Fig 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 4 of 14
NXP Semiconductors
PBSS5350SS
3
10
th(j-a)
10
10
2
10
1
−1
10
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−5
−4
10
10
Z
(K/W)
FR4 PCB, mounting pad for collector 1 cm
50 V, 2.7 A PNP/PNP low V
−3
−2
2
−1
10
1
1010
(BISS) transistor
CEsat
006aaa810
2
10
tp (s)
3
10
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aaa811
2
tp (s)
3
10
Z
th(j-a)
(K/W)
3
10
2
10
10
1
10
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
−4
−3
−2
10
−1
10
10110
10
Ceramic PCB, Al2O3, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 5 of 14
NXP Semiconductors
PBSS5350SS
7. Characteristics
Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
C
c
50 V, 2.7 A PNP/PNP low V
(BISS) transistor
CEsat
=25°C unless otherwise specified.
collector-basecut-off
current
collector-emitter
VCB= −50 V; IE=0A - - −100 nA
= −50 V; IE=0A;
V
CB
T
= 150 °C
j
--−50 µA
VCE= −50 V; VBE=0V - - −100 nA
cut-off current
emitter-base cut-off
VEB= −5 V; IC=0A - - −100 nA
current
DC current gain VCE= −2 V; IC= −100 mA 200 340 -
[1]
200 290 -
[1]
180 250 -
[1]
130 180 -
[1]
95 135 -
[1]
[1]
- 95 140 mΩ
collector-emitter
saturation voltage
collector-emitter
= −2 V; IC= −500 mA
V
CE
= −2 V; IC= −1A
V
CE
= −2 V; IC= −2A
V
CE
= −2 V; IC= −2.7 A
V
CE
IC= −0.5 A; IB= −50 mA - −60 −90 mV
= −1 A; IB= −50 mA - −125 −180 mV
I
C
= −2 A; IB= −100 mA - −225 −320 mV
I
C
= −2 A; IB= −200 mA - −190 −280 mV
I
C
= −2.7 A; IB= −270 mA - −255 −370 mV
I
C
IC= −2 A; IB= −200 mA
saturation resistance
base-emitter
saturation voltage
base-emitter turn-on
IC= −2 A; IB= −100 mA - −0.95 −1.1 V
= −2.7 A; IB= −270 mA - −1 −1.2 V
I
C
VCE= −2 V; IC= −1A
[1]
[1]
- −0.8 −1.2 V
voltage
delay time VCC= −10 V; IC= −2A;
I
= −100 mA;
rise time - 54 - ns
turn-on time - 63 - ns
I
Bon
Boff
= 100 mA
-9-ns
storage time - 190 - ns
fall time - 50 - ns
turn-off time - 240 - ns
collector capacitance VCB= −10 V; IE=ie=0A;
- 2535pF
f=1MHz
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 6 of 14
NXP Semiconductors
PBSS5350SS
600
h
FE
400
200
0
−10
−1
(1)
(2)
(3)
−1 −10
−10
2
006aaa977
3
−10
I
(mA)
C
−10
VCE= −2V
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
50 V, 2.7 A PNP/PNP low V
−5
I
C
(A)
−4
−3
−2
−1
4
0
0 −2.0−1.6−0.8 −1.2−0.4
T
=25°C
amb
IB (mA) = −140
−126
−112
−98
−84
−70
−56
(BISS) transistor
CEsat
006aaa978
−42
−28
−14
VCE (V)
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
006aaa979
3
−10
I
(mA)
C
−10
4
V
(V)
−1.2
BE
−0.8
−0.4
0
−10
(1)
(2)
(3)
−1
−1 −10
−10
2
VCE= −2V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
006aaa980
(mA)
C
−10
4
−10
3
I
2
V
−1.4
BEsat
(V)
−1.0
−0.6
−0.2
−10
(1)
(2)
(3)
−1
−1 −10
−10
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 100 °C
Fig 8. Base-emittersaturation voltage as a function of
collector current; typical values
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 7 of 14
NXP Semiconductors
PBSS5350SS
006aaa981
3
−10
IC (mA)
−10
V
CEsat
(V)
−10
−10
−10
−1
−1
−2
−3
−10
−1
−1 −10
−10
(1)
(2)
(3)
2
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
50 V, 2.7 A PNP/PNP low V
−1
V
CEsat
(V)
−1
−10
(1)
(2)
−2
−10
−3
4
−10
−10
T
−1
amb
(3)
−1 −10
−10
=25°C
(BISS) transistor
CEsat
006aaa982
−10
3
IC (mA)
−10
2
4
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa983
3
−10
IC (mA)
−10
4
R
10
CEsat
(Ω)
10
10
10
10
−1
−2
−10
3
2
1
−1
−1 −10
−10
(1)
(2)
(3)
2
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa984
−10
3
IC (mA)
2
−10
4
R
10
CEsat
(Ω)
10
10
10
10
−1
−2
−10
3
2
(1)
(2)
(3)
1
−1
T
−1 −10
=25°C
amb
−10
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 8 of 14
NXP Semiconductors
PBSS5350SS
8. Test information
−
90 %
10 %
−
90 %
50 V, 2.7 A PNP/PNP low V
I
B
−
I
(100 %)
Bon
−
I
Boff
I
C
(BISS) transistor
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
10 %
t
t
d
r
t
on
Fig 13. BISS transistor switching time definition
V
BB
R
R1
R2
B
Boff
= 100 mA
oscilloscope
V
I
VCC= −10 V; IC= −2 A; I
(probe)
450 Ω
= −100 mA; I
Bon
Fig 14. Test circuit for switching times
−
IC (100 %)
t
t
s
t
off
V
CC
R
C
V
o
(probe)
oscilloscope
450 Ω
DUT
mgd624
t
f
006aaa266
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 9 of 14
NXP Semiconductors
PBSS5350SS
9. Package outline
Fig 15. Package outline SOT96-1 (SO8)
10. Packing information
6.2
5.8
4.0
3.8
pin 1 index
1.27
50 V, 2.7 A PNP/PNP low V
5.0
4.8
1.0
0.4
0.49
0.36
1.75
0.25
0.19
03-02-18Dimensions in mm
(BISS) transistor
CEsat
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
1000 2500
PBSS5350SS SOT96-1 8 mm pitch, 12 mm tape and reel -115 -118
[1] For further information and the availability of packing methods, seeSection 14.
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 10 of 14
NXP Semiconductors
PBSS5350SS
11. Soldering
50 V, 2.7 A PNP/PNP low V
5.50
0.60 (8×)
1.30
4.00 6.60
1.27 (6×)
7.00
(BISS) transistor
CEsat
solder lands
occupied area
placement accuracy ± 0.25
Fig 16. Reflow soldering footprint SOT96-1 (SO8)
1.20 (2×)
0.3 (2×)
1.27 (6×)
5.50
board direction
solder resist
solder lands
occupied area
0.60 (6×)
placement accurracy ± 0.25
Dimensions in mm
enlarged solder land
1.30
4.00
6.60
Dimensions in mm
sot096-1_fr
7.00
sot096-1_fw
Fig 17. Wave soldering footprint SOT96-1 (SO8)
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 11 of 14
NXP Semiconductors
PBSS5350SS
50 V, 2.7 A PNP/PNP low V
(BISS) transistor
CEsat
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS5350SS_1 20070403 Product data sheet - -
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 12 of 14
NXP Semiconductors
PBSS5350SS
50 V, 2.7 A PNP/PNP low V
(BISS) transistor
CEsat
13. Legal information
13.1 Data sheet status
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
[1][2]
Product status
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
[3]
http://www.nxp.com.
Definition
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device.Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PBSS5350SS_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 April 2007 13 of 14
NXP Semiconductors
PBSS5350SS
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
50 V, 2.7 A PNP/PNP low V
(BISS) transistor
CEsat
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 3 April 2007
Document identifier: PBSS5350SS_1
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