NXP PBSS5320T Schematic [ru]
DATA SH EET
DISCRETE SEMICONDUCTORS
PBSS5320T
20 V, 3 A
PNP low V
Product data sheet
Supersedes data of 2002 Aug 08
CEsat
(BISS) transistor
2004 Jan 15
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low V
CEsat
FEATURES
• Low collector-emitter saturation voltage V
corresponding low R
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
(BISS) transistor
CEsat
CEsat
and
PBSS5320T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
collector-emitter voltage −20 V
collector current (DC) −2 A
repetitive peak collector
−3 A
current
equivalent on-resistance 105 mΩ
PNP low V
NPN complement: PBSS4320T.
MARKING
T YPE NUMBER MARKING CODE
PBSS5320T ZH∗
Note
transistor in a SOT23 plastic package.
CEsat
(1)
handbook, halfpage
Top view
3
1
21
MAM256
3
2
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
∗ = W: Made in China.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PBSS5320T − plastic surface mounted package; 3 leads SOT23
2004 Jan 15 2
NXP Semiconductors Product data sheet
20 V, 3 A
PBSS5320T
PNP low V
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CRP
I
CM
I
B
P
T
T
T
CBO
CEO
EBO
tot
stg
j
amb
collector-base voltage open emitter − −20 V
collector-emitter voltage open base − −20 V
emitter-base voltage open collector − −5 V
collector current (DC) − −2 A
repetitive peak collector current note 1 − −3 A
peak collector current single peak − −5 A
base current (DC) − −0.5 A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C; note 2 − 300 mW
amb
T
≤ 25 °C; note 3 − 480 mW
amb
T
≤ 25 °C; note 4 − 540 mW
amb
T
≤ 25 °C; notes 1 and 2 − 1.2 W
amb
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 15 3
NXP Semiconductors Product data sheet
20 V, 3 A
PBSS5320T
PNP low V
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BE(on)
f
T
C
c
collector-base cut-off curren t VCB = −20 V; IE = 0 − − −100 nA
emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA
DC current gain VCE = −2 V; IC = −100 mA 220 − −
collector-emitter saturation
voltage
equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 75 105 mΩ
base-emitter saturation
voltage
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 −1.2 − − V
transition frequency IC = −100 mA; VCE = −5 V;
collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 50 pF
(BISS) transistor
CEsat
VCB = −20 V; IE = 0; Tj = 150 °C − − −50 μA
VCE = −2 V; IC = −500 mA 220 − −
VCE = −2 V; IC = −1 A; note 1 200 − −
VCE = −2 V; IC = −2 A; note 1 150 − −
VCE = −2 V; IC = −3 A; note 1 100 − −
IC = −500 mA; IB = −50 mA − − −70 mV
IC = −1 A; IB = −50 mA − − −130 mV
IC = −2 A; IB = −100 mA; note 1 − − −230 mV
IC = −2 A; IB = −200 mA; note 1 − − −210 mV
IC = −3 A; IB = −300 mA; note 1 − − −300 mV
IC = −2 A; IB = −100 mA; note 1 − − −1.1 V
IC = −3 A; IB = −300 mA; note 1 − − −1.2 V
100 − − MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 15 4
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