DATA SH EET
DISCRETE SEMICONDUCTORS
PBSS5320T
20 V, 3 A
PNP low V
Product data sheet
Supersedes data of 2002 Aug 08
CEsat
(BISS) transistor
2004 Jan 15
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low V
CEsat
FEATURES
• Low collector-emitter saturation voltage V
corresponding low R
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
(BISS) transistor
CEsat
CEsat
and
PBSS5320T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
collector-emitter voltage −20 V
collector current (DC) −2 A
repetitive peak collector
−3 A
current
equivalent on-resistance 105 mΩ
PNP low V
NPN complement: PBSS4320T.
MARKING
T YPE NUMBER MARKING CODE
PBSS5320T ZH∗
Note
transistor in a SOT23 plastic package.
CEsat
(1)
handbook, halfpage
Top view
3
1
21
MAM256
3
2
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
Fig.1 Simplified outline (SOT23) and symbol.
∗ = W: Made in China.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PBSS5320T − plastic surface mounted package; 3 leads SOT23
2004 Jan 15 2
NXP Semiconductors Product data sheet
20 V, 3 A
PBSS5320T
PNP low V
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CRP
I
CM
I
B
P
T
T
T
CBO
CEO
EBO
tot
stg
j
amb
collector-base voltage open emitter − −20 V
collector-emitter voltage open base − −20 V
emitter-base voltage open collector − −5 V
collector current (DC) − −2 A
repetitive peak collector current note 1 − −3 A
peak collector current single peak − −5 A
base current (DC) − −0.5 A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C; note 2 − 300 mW
amb
T
≤ 25 °C; note 3 − 480 mW
amb
T
≤ 25 °C; note 4 − 540 mW
amb
T
≤ 25 °C; notes 1 and 2 − 1.2 W
amb
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tin plated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copp er; tin plated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Jan 15 3
NXP Semiconductors Product data sheet
20 V, 3 A
PBSS5320T
PNP low V
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BE(on)
f
T
C
c
collector-base cut-off curren t VCB = −20 V; IE = 0 − − −100 nA
emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA
DC current gain VCE = −2 V; IC = −100 mA 220 − −
collector-emitter saturation
voltage
equivalent on-resistance IC = −2 A; IB = −200 mA; note 1 − 75 105 mΩ
base-emitter saturation
voltage
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 −1.2 − − V
transition frequency IC = −100 mA; VCE = −5 V;
collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 50 pF
(BISS) transistor
CEsat
VCB = −20 V; IE = 0; Tj = 150 °C − − −50 μA
VCE = −2 V; IC = −500 mA 220 − −
VCE = −2 V; IC = −1 A; note 1 200 − −
VCE = −2 V; IC = −2 A; note 1 150 − −
VCE = −2 V; IC = −3 A; note 1 100 − −
IC = −500 mA; IB = −50 mA − − −70 mV
IC = −1 A; IB = −50 mA − − −130 mV
IC = −2 A; IB = −100 mA; note 1 − − −230 mV
IC = −2 A; IB = −200 mA; note 1 − − −210 mV
IC = −3 A; IB = −300 mA; note 1 − − −300 mV
IC = −2 A; IB = −100 mA; note 1 − − −1.1 V
IC = −3 A; IB = −300 mA; note 1 − − −1.2 V
100 − − MHz
f = 100 MHz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jan 15 4
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low V
1000
handbook, halfpage
h
FE
800
600
400
200
0
−1
−10
VCE = −2 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
CEsat
−1
(BISS) transistor
MLD876
(1)
(2)
(3)
−10
−10
2
−10
3
IC (mA)
−10
PBSS5320T
−10
MLD877
3
IC (mA)
−10
4
−1200
handbook, halfpage
V
BE
(mV)
(1)
−800
(2)
(3)
−400
0
4
−10
−1
−1 −10
−10
2
VCE = −2 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.2 DC current gain as a function of collector
current; typical values.
−10
MLD878
3
IC (mA)
−1400
handbook, halfpage
V
BEsat
(mV)
−1000
−600
−200
−1
−10
IC/IB = 10.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
−1 −10
−10
(1)
(2)
(3)
2
−10
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
−10
MLD879
3
IC (mA)
−10
4
−1400
handbook, halfpage
V
BEsat
(mV)
−1000
(1)
(2)
−600
−200
4
−10
−1
−1 −10
−10
(3)
2
IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15 5
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low V
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
−10
−1
−1
−10
IC/IB = 10.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
CEsat
−1 −10
(BISS) transistor
MLD880
−10
(1)
(3)
2
−10
(2)
3
IC (mA)
−10
4
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
−10
−1
−1
−10
IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
−1 −10
PBSS5320T
(1)
(2)
(3)
−10
2
−10
3
IC (mA)
MLD881
−10
4
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
MLD882
(2)(1)
3
IC (mA)
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
−10
−1
−1
−10
IC/IB = 50.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
−1 −10
−10
(3)
2
−10
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
MLD883
3
IC (mA)
−10
4
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
(1)
(3) (2)
4
−10
−10
−1
−1 −10 −10
2
IC/IB = 100.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 15 6
NXP Semiconductors Product data sheet
20 V, 3 A
PNP low V
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
−1
10
−2
10
−1
−10
IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
CEsat
−1
(BISS) transistor
MLD884
(1)
(2)
−10 −10
(3)
2
−10
3
IC (mA)
−10
PBSS5320T
4
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Jan 15 7
NXP Semiconductors Product data sheet
3
20 V, 3 A
PBSS5320T
PNP low V
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads SOT2
(BISS) transistor
CEsat
D
E
H
E
AB
X
v
M
A
3
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
max.
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC JEITA
b
p
e
cD
3.0
2.8
w
M
B
0 1 2 mm
scale
e
e
0.95
H
1
2.5
2.1
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.45
0.55
0.2
0.15
0.45
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 15 8
NXP Semiconductors Product data sheet
20 V, 3 A
PBSS5320T
PNP low V
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This doc ument contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
(BISS) transistor
CEsat
PRODUCT
STATUS
(2)
development.
DEFINITION
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Jan 15 9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property right s.
Printed in The Netherlands R75/02/pp10 Date of release: 2004 Jan 15 Document order number: 9397 750 12441
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