NXP PBSS4160DS Schematic [ru]

PBSS4160DS

60 V, 1 A NPN/NPN low V

Rev. 04 — 11 December 2009 Product data sheet

1. Product profile

1.1 General description

NPN/NPN low V
(SC-74) Surface Mounted Device (SMD) plastic package.

PNP/PNP complement: PBSS5160DS.

1.2 Features

 Low collector-emitter saturation voltage V
 High collector current capability: IC and I
 High collector current gain (hFE) at high I
 High efficiency due to less heat generation
 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

(BISS) transistor

CEsat

Breakthrough In Small Signal (BISS) transistor pair in a SOT457

CEsat

CEsat

CM

C

1.3 Applications

 Dual low power switches (e.g. motors, fans)
 Automotive applications

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V

CEO

I

C

I

CM

R

CEsat

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: t

collector-emitter voltage open base - - 60 V
collector current
peak collector current single pulse;

tp≤ 1ms

collector-emitter saturation
resistance

≤ 300 μs; δ≤0.02.

p

IC=1A;

= 100 mA

I

B

[1]

--1A

--2A

[2]

- 200 250 mΩ

NXP Semiconductors

PBSS4160DS

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1emitter TR1
2 base TR1
3 collector TR2
4emitter TR2
5 base TR2
6 collector TR1

3. Ordering information

Table 3. Ordering information

Type number Package

PBSS4160DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457

60 V, 1 A NPN/NPN low V

4

56

132

(BISS) transistor

CEsat

6

TR1

1

sym020

5

4

TR2

2

3

Name Description Version

4. Marking

Table 4. Marking codes

Type number Marking code

PBSS4160DS B8

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

B

I

BM

collector-base voltage open emitter - 80 V
collector-emitter voltage open base - 60 V
emitter-base voltage open collector - 5 V
collector current

[1]

-0.87A

[2]

-1A

[3]

-1A
peak collector current single pulse; tp≤ 1ms - 2 A
base current - 300 mA
peak base current single pulse; tp≤ 1ms - 1 A

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 2 of 14

NXP Semiconductors

PBSS4160DS

Table 5. Limiting values

60 V, 1 A NPN/NPN low V

…continued

(BISS) transistor

CEsat

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

tot

total power dissipation T

amb

≤ 25 °C

[1]

-290mW

[2]

-370mW

[3]

-450mW

Per device

P

tot

T

j

T

amb

T

stg

total power dissipation T

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

amb

≤ 25 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on a ceramic PCB, Al

, standard footprint.

2O3

[1]

-420mW

[2]

-560mW

[3]

-700mW

2

.

800

(1)

P

tot

(mW)

600

(2)

(3)

400

200

0

0 16012040 80

(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4PCB, mounting pad for collector 1 cm
(3) FR4PCB, standard footprint

Fig 1. Power derating curves

006aaa493

T

(°C)

amb

2

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 3 of 14

NXP Semiconductors

PBSS4160DS

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

R

th(j-sp)

Per device

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
[3] Device mounted on a ceramic PCB, Al

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

thermal resistance from
junction to ambient

60 V, 1 A NPN/NPN low V

in free air

in free air

, standard footprint.

2O3

(BISS) transistor

CEsat

[1]

--431K/W

[2]

--338K/W

[3]

--278K/W

--105K/W

[1]

--298K/W

[2]

--223K/W

[3]

--179K/W

2

.

006aaa494

2

10

tp (s)

10

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

0.20

0.10

0.05

0.02

0.01

0

0.33

−4

10

−3

10

−2

−1

10

1

1010

2

10

10

1

−5

10

FR4 PCB, standard footprint

Fig 2. T ra nsient thermal impedance from junction to ambient as a function of pulse time; typical values

3

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 4 of 14

NXP Semiconductors

PBSS4160DS

3

10

Z

th(j-a)

(K/W)

δ = 1

0.75

0.50

2

10

10

1

−5

10

0.20

0.10

0.05

0.02

0.01

0.33

0

−4

10

FR4 PCB, mounting pad for collector 1 cm

60 V, 1 A NPN/NPN low V

−3

10

−2

2

−1

10

1

1010

(BISS) transistor

CEsat

006aaa495

2

10

tp (s)

10

Fig 3. T ra nsient thermal impedance from junction to ambient as a function of pulse time; typical values

3

10

006aaa496

3

Z

th(j-a)

(K/W)

δ = 1

0.75

0.50

2

10

10

1

10

−5

0.20

0.10

0.05

0.02

0.01

0

0.33

−4

10

−3

10

−2

−1

10

1

1010

2

10

tp (s)

10

Ceramic PCB, Al2O3, standard footprint

Fig 4. T ra nsient thermal impedance from junction to ambient as a function of pulse time; typical values

3

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 5 of 14

NXP Semiconductors

PBSS4160DS

7. Characteristics

Table 7. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

I

CES

I

EBO

h

FE

V

CEsat

R

CEsat

V

BEsat

V

BEon

t

d

t

r

t

on

t

s

t

f

t

off

f

T

C

c

60 V, 1 A NPN/NPN low V

(BISS) transistor

CEsat

=25°C unless otherwise specified.

collector-base cut-off
current

collector-emitter cut-off

VCB=60V; IE= 0 A - - 100 nA

=60V; IE=0A;

V

CB

= 150 °C

T

j

--50μA

VCE=60V; VBE= 0 V - - 100 nA

current
emitter-base cut-off current VEB=5V; IC= 0 A - - 100 nA
DC current gain VCE=5V; IC= 1 mA 250 500 -

[1]

200 420 -

[1]

100 180 -

[1]

- 200 250 mV

[1]

- 200 250 mΩ

collector-emitter saturation
voltage

collector-emitter saturation

=5V; IC=500mA

V

CE

=5V; IC=1A

V

CE

IC= 100 mA; IB=1mA - 90 110 mV

= 500 mA; IB= 50 mA - 115 140 mV

I

C

=1A; IB=100mA

I

C

IC=1A; IB=100mA

resistance
base-emitter saturation

IC=1A; IB=50mA

[1]

- 0.95 1.1 V

voltage
base-emitter turn-on

VCE=5V; IC=1A

[1]

- 0.82 0.9 V

voltage
delay time IC=0.5A; I

= −25 mA

I

rise time - 78 - ns

Boff

=25mA;

Bon

-11-ns

turn-on time - 90 - ns
storage time - 340 - ns
fall time - 160 - ns
turn-off time - 500 - ns
transition frequency VCE=10V; IC=50mA;

150 220 - MHz

f = 100 MHz

collector capacitance VCB=10V; IE=ie=0A;

- 5.5 10 pF

f=1MHz

[1] Pulse test: tp≤ 300 μs; δ≤0.02.

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 6 of 14

NXP Semiconductors

PBSS4160DS

800

h

FE

600

400

200

0

−1

10

(1)

(2)

(3)

110

10

2

006aaa505

3

10

IC (mA)

4

10

VCE=5V

amb
amb
amb

= 100 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 5. DC current gain as a function of collector

current; typical values

60 V, 1 A NPN/NPN low V

1.2

V

BE

(V)

1.0

0.8

0.6

0.4

0.2
10

(1) T
(2) T
(3) T

−1

V

CE
amb
amb
amb

(1)

(2)

(3)

110

10

=5V

= −55 °C
=25°C
= 100 °C

(BISS) transistor

CEsat

006aaa506

2

3

10

(mA)

I

C

4

10

Fig 6. Base-emitter voltage as a function of collector

current; typical values

006aaa513

3

10

IC (mA)

4

10

V

CEsat

(V)

10

10

1

−1

(1)
(2)
(3)

−2

−1

10

110

10

2

IC/IB=20

amb
amb
amb

= 100 °C
=25°C
= −55 °C

(1) T
(2) T
(3) T

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa514

3

10

IC (mA)

4

10

V

CEsat

(V)

10

10

10

(1) I
(2) I
(3) I

1

−1

−2

−3

−1

10

T

amb

C/IB
C/IB
C/IB

(1)

(2)

(3)

110

10

2

=25°C
= 100
=50
=10

Fig 8. Collector-emitter sa turation voltage as a

function of collector current; typical values

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 7 of 14

NXP Semiconductors

006aaa509

006aaa515

PBSS4160DS

1.2

V

BEsat

(V)

1.0

0.8

0.6

0.4

0.2

−1

10

(1)

(2)

(3)

110

10

2

3

10

(mA)

I

C

4

10

IC/IB=20

amb
amb
amb

= −55 °C
=25°C
= 100 °C

(1) T
(2) T
(3) T

Fig 9. Base-emitter saturation voltage as a function

of collector current; typical values

60 V, 1 A NPN/NPN low V

3

10

R

CEsat

(Ω)

2

10

10

1

−1

10

−1

10

I
(1) T
(2) T
(3) T

110

=20

C/IB

= 100 °C

amb

=25°C

amb

= −55 °C

amb

10

(BISS) transistor

CEsat

(1)
(2)
(3)

10

3

IC (mA)

2

4

10

Fig 10. Collector-emitter saturation resistance as a

function of collector current; typical values

2.0

I

C

(A)

1.6

1.2

0.8

0.4

0

05312 4

T

=25°CT

amb

IB (mA) = 65.0

52.0

39.0

26.0

13.0

006aaa511

58.5

45.5

32.5

19.5

6.5

VCE (V)

Fig 11. Collector current as a function of

collector-emitter voltage; typical values

006aaa516

(1)

(2)

3

10

IC (mA)

(3)

4

10

R

10

CEsat

(Ω)

10

10

(1) I
(2) I
(3) I

3

2

10

1

−1

−1

10

110

=25°C

amb

= 100

C/IB

=50

C/IB

=10

C/IB

10

2

Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 8 of 14

NXP Semiconductors

PBSS4160DS

8. Test information

90 %

10 %

90 %

60 V, 1 A NPN/NPN low V

I

B

I

(100 %)

Bon

I

Boff

I

C

(BISS) transistor

CEsat

input pulse
(idealized waveform)

output pulse
(idealized waveform)

10 %

t

t

d

r

t

on

Fig 13. BISS transistor switching time definition

V

BB

R

B

IC= 0.5 A; I

oscilloscope

V

I

=25mA; I

Bon

R

(probe)

450 Ω

R2

R1

= −25 mA; R1 = open; R2 = 100 Ω; RB= 300 Ω; RC=20Ω

Boff

Fig 14. Test circuit for switching tim es

IC (100 %)

t

t

s

t

off

V

CC

C

V

o

(probe)

oscilloscope

450 Ω

DUT

mlb826

t

f

006aaa003

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 9 of 14

NXP Semiconductors

PBSS4160DS

9. Package outline

Fig 15. Package outline SOT457 (SC-74)

10. Packing information

3.0

2.5

1.7

1.3
pin 1 index

132

0.95

60 V, 1 A NPN/NPN low V

3.1

2.7

1.9

56

4

0.6

0.2

0.40

0.25

1.1

0.9

0.26

0.10

(BISS) transistor

CEsat

04-11-08Dimensions in mm

Table 8. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]

Type number Package Description Packing quantity

3000 10000

[2]

PBSS4160DS SOT457 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping

-115 -135

[3]

-125 -165

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 10 of 14

NXP Semiconductors

PBSS4160DS

11. Soldering

0.95

2.825

3.30

Dimensions in mm

Fig 16. Reflow soldering footprint

60 V, 1 A NPN/NPN low V

3.45

1.95

0.45 0.55

1.60

1.70

3.10

3.20

msc422

(BISS) transistor

CEsat

solder lands

solder resist

occupied area

solder paste

5.30

5.05

1.40

4.30

Dimensions in mm

Fig 17. Wave soldering footprint

0.45

1.45 4.45

msc423

solder lands

solder resist

occupied area

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 11 of 14

NXP Semiconductors

PBSS4160DS

60 V, 1 A NPN/NPN low V

(BISS) transistor

CEsat

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS4160DS_4 20091211 Product data sheet - PBSS4160DS_3
Modifications:

PBSS4160DS_3 20060209 Product data sheet - PBSS4160DS_2
PBSS4160DS_2 20050627 Product data sheet - PBSS4160DS_1
PBSS4160DS_1 20040426 Objective data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 17 “Wave soldering footprint”: updated

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 12 of 14

NXP Semiconductors

PBSS4160DS

60 V, 1 A NPN/NPN low V

(BISS) transistor

CEsat

13. Legal information

13.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[1][2]

Product status

[3]

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.

, including those pertaining to warranty,

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 04 — 11 December 2009 13 of 14

NXP Semiconductors

PBSS4160DS

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

60 V, 1 A NPN/NPN low V

(BISS) transistor

CEsat

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 11 December 2009

Document identifier: PBSS4160DS_4