NXP PBSS4160DS Schematic [ru]

PBSS4160DS
60 V, 1 A NPN/NPN low V
Rev. 04 — 11 December 2009 Product data sheet

1. Product profile

1.1 General description

NPN/NPN low V (SC-74) Surface Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5160DS.
Low collector-emitter saturation voltage VHigh collector current capability: IC and I  High collector current gain (hFE) at high I  High efficiency due to less heat generationSmaller required Printed-Circuit Board (PCB) area than for conventional transistors
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor pair in a SOT457
CEsat
CEsat
CM
C

1.3 Applications

Dual low power switches (e.g. motors, fans)Automotive applications

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
V
CEO
I
C
I
CM
R
CEsat
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Pulse test: t
collector-emitter voltage open base - - 60 V collector current peak collector current single pulse;
tp≤ 1ms
collector-emitter saturation resistance
300 μs; δ≤0.02.
p
IC=1A;
= 100 mA
I
B
[1]
--1A
--2A
[2]
- 200 250 mΩ
NXP Semiconductors
PBSS4160DS

2. Pinning information

Table 2. Pinning
Pin Description Simplified outline Symbol
1emitter TR1 2 base TR1 3 collector TR2 4emitter TR2 5 base TR2 6 collector TR1

3. Ordering information

Table 3. Ordering information
Type number Package
PBSS4160DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457
60 V, 1 A NPN/NPN low V
4
56
132
(BISS) transistor
CEsat
6
TR1
1
sym020
5
4
TR2
2
3
Name Description Version

4. Marking

Table 4. Marking codes
Type number Marking code
PBSS4160DS B8

5. Limiting values

Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
collector-base voltage open emitter - 80 V collector-emitter voltage open base - 60 V emitter-base voltage open collector - 5 V collector current
[1]
-0.87A
[2]
-1A
[3]
-1A peak collector current single pulse; tp≤ 1ms - 2 A base current - 300 mA peak base current single pulse; tp≤ 1ms - 1 A
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 2 of 14
NXP Semiconductors
PBSS4160DS
Table 5. Limiting values
60 V, 1 A NPN/NPN low V
…continued
(BISS) transistor
CEsat
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
total power dissipation T
amb
25 °C
[1]
-290mW
[2]
-370mW
[3]
-450mW
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation T
junction temperature - 150 °C ambient temperature −65 +150 °C storage temperature −65 +150 °C
amb
25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al
, standard footprint.
2O3
[1]
-420mW
[2]
-560mW
[3]
-700mW
2
.
800
(1)
P
tot
(mW)
600
(2)
(3)
400
200
0
0 16012040 80
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4PCB, mounting pad for collector 1 cm (3) FR4PCB, standard footprint
Fig 1. Power derating curves
006aaa493
T
(°C)
amb
2
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 3 of 14
NXP Semiconductors
PBSS4160DS

6. Thermal characteristics

Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al
thermal resistance from junction to ambient
thermal resistance from junction to solder point
thermal resistance from junction to ambient
60 V, 1 A NPN/NPN low V
in free air
in free air
, standard footprint.
2O3
(BISS) transistor
CEsat
[1]
--431K/W
[2]
--338K/W
[3]
--278K/W
--105K/W
[1]
--298K/W
[2]
--223K/W
[3]
--179K/W
2
.
006aaa494
2
10
tp (s)
10
Z
th(j-a)
(K/W)
3
10
δ = 1
0.75
0.50
0.20
0.10
0.05
0.02
0.01
0
0.33
4
10
3
10
2
1
10
1
1010
2
10
10
1
5
10
FR4 PCB, standard footprint
Fig 2. T ra nsient thermal impedance from junction to ambient as a function of pulse time; typical values
3
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 4 of 14
NXP Semiconductors
PBSS4160DS
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.50
2
10
10
1
5
10
0.20
0.10
0.05
0.02
0.01
0.33
0
4
10
FR4 PCB, mounting pad for collector 1 cm
60 V, 1 A NPN/NPN low V
3
10
2
2
1
10
1
1010
(BISS) transistor
CEsat
006aaa495
2
10
tp (s)
10
Fig 3. T ra nsient thermal impedance from junction to ambient as a function of pulse time; typical values
3
10
006aaa496
3
Z
th(j-a)
(K/W)
δ = 1
0.75
0.50
2
10
10
1
10
5
0.20
0.10
0.05
0.02
0.01
0
0.33
4
10
3
10
2
1
10
1
1010
2
10
tp (s)
10
Ceramic PCB, Al2O3, standard footprint
Fig 4. T ra nsient thermal impedance from junction to ambient as a function of pulse time; typical values
3
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 5 of 14
NXP Semiconductors
PBSS4160DS

7. Characteristics

Table 7. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
60 V, 1 A NPN/NPN low V
(BISS) transistor
CEsat
=25°C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off
VCB=60V; IE= 0 A - - 100 nA
=60V; IE=0A;
V
CB
= 150 °C
T
j
--50μA
VCE=60V; VBE= 0 V - - 100 nA
current emitter-base cut-off current VEB=5V; IC= 0 A - - 100 nA DC current gain VCE=5V; IC= 1 mA 250 500 -
[1]
200 420 -
[1]
100 180 -
[1]
- 200 250 mV
[1]
- 200 250 mΩ
collector-emitter saturation voltage
collector-emitter saturation
=5V; IC=500mA
V
CE
=5V; IC=1A
V
CE
IC= 100 mA; IB=1mA - 90 110 mV
= 500 mA; IB= 50 mA - 115 140 mV
I
C
=1A; IB=100mA
I
C
IC=1A; IB=100mA
resistance base-emitter saturation
IC=1A; IB=50mA
[1]
- 0.95 1.1 V
voltage base-emitter turn-on
VCE=5V; IC=1A
[1]
- 0.82 0.9 V
voltage delay time IC=0.5A; I
= 25 mA
I
rise time - 78 - ns
Boff
=25mA;
Bon
-11-ns
turn-on time - 90 - ns storage time - 340 - ns fall time - 160 - ns turn-off time - 500 - ns transition frequency VCE=10V; IC=50mA;
150 220 - MHz
f = 100 MHz
collector capacitance VCB=10V; IE=ie=0A;
- 5.5 10 pF
f=1MHz
[1] Pulse test: tp≤ 300 μs; δ≤0.02.
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 6 of 14
NXP Semiconductors
PBSS4160DS
800
h
FE
600
400
200
0
1
10
(1)
(2)
(3)
110
10
2
006aaa505
3
10
IC (mA)
4
10
VCE=5V
amb amb amb
= 100 °C =25°C = 55 °C
(1) T (2) T (3) T
Fig 5. DC current gain as a function of collector
current; typical values
60 V, 1 A NPN/NPN low V
1.2
V
BE
(V)
1.0
0.8
0.6
0.4
0.2 10
(1) T (2) T (3) T
1
V
CE amb amb amb
(1)
(2)
(3)
110
10
=5V
= 55 °C =25°C = 100 °C
(BISS) transistor
CEsat
006aaa506
2
3
10
(mA)
I
C
4
10
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa513
3
10
IC (mA)
4
10
V
CEsat
(V)
10
10
1
1
(1) (2) (3)
2
1
10
110
10
2
IC/IB=20
amb amb amb
= 100 °C =25°C = 55 °C
(1) T (2) T (3) T
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa514
3
10
IC (mA)
4
10
V
CEsat
(V)
10
10
10
(1) I (2) I (3) I
1
1
2
3
1
10
T
amb
C/IB C/IB C/IB
(1)
(2)
(3)
110
10
2
=25°C = 100 =50 =10
Fig 8. Collector-emitter sa turation voltage as a
function of collector current; typical values
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 7 of 14
NXP Semiconductors
006aaa509
006aaa515
PBSS4160DS
1.2
V
BEsat
(V)
1.0
0.8
0.6
0.4
0.2
1
10
(1)
(2)
(3)
110
10
2
3
10
(mA)
I
C
4
10
IC/IB=20
amb amb amb
= 55 °C =25°C = 100 °C
(1) T (2) T (3) T
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
60 V, 1 A NPN/NPN low V
3
10
R
CEsat
(Ω)
2
10
10
1
1
10
1
10
I (1) T (2) T (3) T
110
=20
C/IB
= 100 °C
amb
=25°C
amb
= 55 °C
amb
10
(BISS) transistor
CEsat
(1) (2) (3)
10
3
IC (mA)
2
4
10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
2.0
I
C
(A)
1.6
1.2
0.8
0.4
0
05312 4
T
=25°CT
amb
IB (mA) = 65.0
52.0
39.0
26.0
13.0
006aaa511
58.5
45.5
32.5
19.5
6.5
VCE (V)
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
006aaa516
(1)
(2)
3
10
IC (mA)
(3)
4
10
R
10
CEsat
(Ω)
10
10
(1) I (2) I (3) I
3
2
10
1
1
1
10
110
=25°C
amb
= 100
C/IB
=50
C/IB
=10
C/IB
10
2
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 8 of 14
NXP Semiconductors
PBSS4160DS

8. Test information

90 %
10 %
90 %
60 V, 1 A NPN/NPN low V
I
B
I
(100 %)
Bon
I
Boff
I
C
(BISS) transistor
CEsat
input pulse (idealized waveform)
output pulse (idealized waveform)
10 %
t
t
d
r
t
on
Fig 13. BISS transistor switching time definition
V
BB
R
B
IC= 0.5 A; I
oscilloscope
V
I
=25mA; I
Bon
R
(probe)
450 Ω
R2
R1
= 25 mA; R1 = open; R2 = 100 Ω; RB= 300 Ω; RC=20Ω
Boff
Fig 14. Test circuit for switching tim es
IC (100 %)
t
t
s
t
off
V
CC
C
V
o
(probe)
oscilloscope
450 Ω
DUT
mlb826
t
f
006aaa003
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 9 of 14
NXP Semiconductors
PBSS4160DS

9. Package outline

Fig 15. Package outline SOT457 (SC-74)

10. Packing information

3.0
2.5
1.7
1.3 pin 1 index
132
0.95
60 V, 1 A NPN/NPN low V
3.1
2.7
1.9
56
4
0.6
0.2
0.40
0.25
1.1
0.9
0.26
0.10
(BISS) transistor
CEsat
04-11-08Dimensions in mm
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
[2]
PBSS4160DS SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
[1] For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping
-115 -135
[3]
-125 -165
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 10 of 14
NXP Semiconductors
PBSS4160DS

11. Soldering

0.95
2.825
3.30
Dimensions in mm
Fig 16. Reflow soldering footprint
60 V, 1 A NPN/NPN low V
3.45
1.95
0.45 0.55
1.60
1.70
3.10
3.20
msc422
(BISS) transistor
CEsat
solder lands
solder resist
occupied area
solder paste
5.30
5.05
1.40
4.30
Dimensions in mm
Fig 17. Wave soldering footprint
0.45
1.45 4.45
msc423
solder lands
solder resist
occupied area
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 11 of 14
NXP Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low V
(BISS) transistor
CEsat

12. Revision history

Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS4160DS_4 20091211 Product data sheet - PBSS4160DS_3 Modifications:
PBSS4160DS_3 20060209 Product data sheet - PBSS4160DS_2 PBSS4160DS_2 20050627 Product data sheet - PBSS4160DS_1 PBSS4160DS_1 20040426 Objective data sheet - -
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical content.
Figure 17 “Wave soldering footprint”: updated
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 12 of 14
NXP Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low V
(BISS) transistor
CEsat

13. Legal information

13.1 Data sheet status

Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
[1][2]
Product status
[3]
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.
, including those pertaining to warranty,

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS4160DS_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 11 December 2009 13 of 14
NXP Semiconductors
PBSS4160DS

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
60 V, 1 A NPN/NPN low V
(BISS) transistor
CEsat
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: PBSS4160DS_4
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