NXP NX3020NAKS Schematic [ru]

NX3020NAKS

30 V, 180 mA dual N-channel Trench MOSFET

11 November 2013 Product data sheet

1. General description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363
(SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.

2. Features and benefits

Very fast switching

•

Trench MOSFET technology

•

ESD protection

•

Low threshold voltage

•

3. Applications

Relay driver

•

High-speed line driver

•

Low-side loadswitch

•

Switching circuits

•

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V

DS

V

GS

I

D

Static characteristics (per transistor)

R

DSon

drain-source voltage - - 30 V

gate-source voltage

drain current VGS = 4.5 V; T

drain-source on-state
resistance

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm2.

Tj = 25 °C

-20 - 20 V

= 25 °C [1] - - 180 mA

amb

VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.5 Ω

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NXP Semiconductors

1 32

456

017aaa256

D1

S1

G1

D2

S2

G2

NX3020NAKS

30 V, 180 mA dual N-channel Trench MOSFET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 S1 source TR1

2 G1 gate TR1

3 D2 drain TR2

4 S2 source TR2

5 G2 gate TR2

TSSOP6 (SOT363)

6 D1 drain TR1

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

NX3020NAKS TSSOP6 plastic surface-mounted package; 6 leads SOT363

7. Marking

Table 4. Marking codes

Type number Marking code

[1]

NX3020NAKS Ua%

[1] % = placeholder for manufacturing site code

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

DS

V

GS

D

I

DM

tot

NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 11 November 2013 2 / 15

drain-source voltage - 30 V

gate-source voltage

drain current

peak drain current T

total power dissipation T

Tj = 25 °C

-20 20 V

VGS = 4.5 V; T

VGS = 4.5 V; T

= 25 °C; single pulse; tp ≤ 10 µs - 720 mA

amb

= 25 °C

amb

= 25 °C [1] - 180 mAI

amb

= 100 °C [1] - 110 mA

amb

[2] - 260 mWP

[1] - 280 mW

NXP Semiconductors

T

amb

(°C)

- 75 17512525 75- 25

017aaa001

40

80

120

P

der

(%)

0

T

amb

(°C)

- 75 17512525 75- 25

017aaa002

40

80

120

I

der

(%)

0

NX3020NAKS

30 V, 180 mA dual N-channel Trench MOSFET

Symbol Parameter Conditions Min Max Unit

Tsp = 25 °C - 1100 mW

Source-drain diode

I

S

Per device

P

tot

T

j

T

amb

T

stg

source current T

total power dissipation T

= 25 °C - 180 mA

amb

= 25 °C [2] - 375 mW

amb

junction temperature -55 150 °C

ambient temperature -55 150 °C

storage temperature -65 150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm2.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Fig. 1. Normalized total power dissipation as a

function of ambient temperature

NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Fig. 2. Normalized continuous drain current as a

function of ambient temperature

Product data sheet 11 November 2013 3 / 15

NXP Semiconductors

017aaa673

VDS (V)

10

-1

10

2

101

10

-1

10

-2

1

I

D

(A)

10

-3

Limit R

DSon

= VDS/I

D

tp = 100 µs

tp = 1 ms

tp = 10 ms

tp = 100 ms

DC; Tsp = 25 °C

DC; T

amb

= 25 °C;

drain mounting pad 1 cm

2

NX3020NAKS

30 V, 180 mA dual N-channel Trench MOSFET

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

th(j-a)

thermal resistance

in free air
from junction to
ambient

R

th(j-sp)

thermal resistance
from junction to solder
point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

[1] - 390 480 K/WR

[2] - 380 430 K/W

- - 110 K/W

NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 11 November 2013 4 / 15

NXP Semiconductors

017aaa674

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

3

Z

th(j-a)

(K/W)

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

017aaa675

tp (s)

10

-3

10

2

10

3

10110

-2

10

-1

10

2

10

3

Z

th(j-a)

(K/W)

10

duty cycle = 1

0.75

0.5

0.33

0.25

0.2

0.1

0.05

0.02

0.01

0

NX3020NAKS

30 V, 180 mA dual N-channel Trench MOSFET

FR4 PCB, standard footprint

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

FR4 PCB, mounting pad for drain 1 cm

2

Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

NX3020NAKS All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved

Product data sheet 11 November 2013 5 / 15