NXP NX2301P Schematic [ru]
NX2301P
20 V, 2 A P-channel Trench MOSFET
Rev. 1 — 26 October 2010 Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effe ct Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
1.8 V R
rated for Low Voltage Gate Drive
DSon
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DS
V
GS
I
D
R
DSon
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5s.
[2] Pulse test: t
drain-source voltage T
gate-source voltage T
drain current T
drain-source on-state
resistance
≤ 300 μs; δ≤0.01.
p
=25°C--−20 V
amb
=25°C--±8V
amb
=25°C;
amb
= −4.5 V
V
GS
Tj=25°C;
V
= −4.5 V;
GS
= −1A
I
D
[1]
--−2A
[2]
- 100 120 mΩ
NXP Semiconductors
4
2. Pinning information
Table 2. Pinning
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2S source
3 D drain
3. Ordering information
Table 3. Ordering information
Type number Package
NX2301P TO-236AB plastic surface-mounted package; 3 leads SOT23
NX2301P
20 V, 2 A P-channel Trench MOSFET
3
12
Name Description Version
D
G
S
017aaa09
4. Marking
Table 4. Marking codes
Type number Marking code
NX2301P MG*
[1] * = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
V
GS
I
D
I
DM
drain-source voltage T
gate-source voltage T
=25°C-−20 V
amb
=25°C-±8V
amb
drain current VGS= −4.5 V
T
=25°C-−2A
amb
=100°C-−1.2 A
T
amb
peak drain current T
amb
=25°C;
single pulse; tp≤ 10 μs
[1]
[1]
- −6A
NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 26 October 2010 2 of 16
NXP Semiconductors
NX2301P
20 V, 2 A P-channel Trench MOSFET
P
(%)
der
120
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
T
j
T
amb
T
stg
total power dissipation T
=25°C
amb
=25°C-2.8W
T
sp
junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C
[2]
-400mW
[1]
-710mW
Source-drain diode
I
S
source current T
amb
=25°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5s.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001
80
I
der
(%)
120
80
[1]
- −0.7 A
017aaa002
40
0
−75 17512525 75−25
der
----------------------- -
P
P
P
tot
tot 25°C()
100 %×= I
T
(°C)
amb
Fig 1. Normalized total power dissipation as a
function of ambient temperature
40
0
−75 17512525 75−25
------------------- -
der
I
I
D
D25° C()
100 %×=
T
(°C)
amb
Fig 2. Normalized continuous drain current as a
function of ambient temperature
NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 26 October 2010 3 of 16
NXP Semiconductors
017aaa095
−10
(A)
Limit R
I
D
−1
DSon
= VDS/I
NX2301P
20 V, 2 A P-channel Trench MOSFET
D
(1)
(2)
−1
−10
−2
−10
−1
−10
I
DM
(1) t
p
(2) t
p
(3) DC; T
(4) t
p
(5) DC; T
= single pulse
=1ms
=10ms
=25°C
sp
= 100 ms
=25°C; drain mounting pad 6 cm
amb
−10−1
2
(3)
(4)
(5)
VDS (V)
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of
drain-source voltage
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
in free air
[1]
- - 315 K/W
[2]
- - 175 K/W
--45K/W
−10
2
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
, t ≤ 5s.
Product data sheet Rev. 1 — 26 October 2010 4 of 16
NXP Semiconductors
017aaa096
NX2301P
20 V, 2 A P-channel Trench MOSFET
3
10
Z
th(j-a)
(K/W)
Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
duty cycle = 1
0.75
0.5
2
10
10
1
−3
10
0.25
0.1
0.02
0
0.33
0.2
0.05
0.01
FR4 PCB, standard footprint
−2
−1
10
10110
2
10
tp (s)
10
3
tp (s)
017aaa097
3
10
3
10
Z
th(j-a)
(K/W)
2
10
10
1
10
duty cycle = 1
0.5
0.25
0.1
0
−3
0.75
0.33
0.2
0.05
0.02
0.01
−2
FR4 PCB, mounting pad for drain 6 cm
−1
10
2
10110
2
10
Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values
NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 26 October 2010 5 of 16
NXP Semiconductors
7. Characteristics
Table 7. Characteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DSon
g
fs
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Source-drain diode
V
SD
[1] Pulse test: tp≤ 300 μs; δ≤0.01.
NX2301P
20 V, 2 A P-channel Trench MOSFET
drain-source breakdown
voltage
gate-source threshold
voltage
drain leakage current VDS= −20 V; VGS=0V - - −1 μA
gate leakage current VGS= ±8V; VDS=0V - - ±100 nA
drain-source on-state
resistance
forward
transconductance
total gate charge ID= −2.2 A; VDS= −6V;
gate-source charge - 1.1 - nC
gate-drain charge - 0.9 - nC
input capacitance VGS=0V; VDS= −6V;
output capacitance - 135 - pF
reverse transfer
capacitance
turn-on delay time VDD= −6V;
rise time - 15 - ns
turn-off delay time - 50 - ns
fall time - 25 - ns
source-drain voltage IS= −1A; VGS=0V
ID= −250 μA; VGS=0V −20--V
ID= −250 μA; VDS=V
GS
−0.5 −0.75 −1.1 V
[1]
VGS= −4.5 V; ID= −1A
=25°C 100 120 mΩ
T
j
= 150 °C - 180 mΩ
T
j
= −2.5 V; ID= −1 A - 155 190 mΩ
V
GS
V
GS
= −1.8 V;
- 210 270 mΩ
ID= −0.2 A
VDS= −5V; ID= −2A
[1]
-4.7-S
-4.56nC
VGS= −4.5 V
- 380 - pF
f=1MHz
-115-pF
-7-ns
=6Ω;
R
L
= −4.5 V;
V
GS
R
=6Ω
G
[1]
- −0.8 −1.0 V
NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 26 October 2010 6 of 16
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