NXP NX2301P Schematic [ru]

NX2301P

20 V, 2 A P-channel Trench MOSFET

Rev. 1 — 26 October 2010 Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effe ct Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.

1.2 Features and benefits

 1.8 V R

rated for Low Voltage Gate Drive

DSon

 Very fast switching
 Trench MOSFET technology
 AEC-Q101 qualified

1.3 Applications

 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

V

GS

I

D

R

DSon

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5s.
[2] Pulse test: t

drain-source voltage T
gate-source voltage T
drain current T

drain-source on-state
resistance

≤ 300 μs; δ≤0.01.

p

=25°C--−20 V

amb

=25°C--±8V

amb

=25°C;

amb

= −4.5 V

V

GS

Tj=25°C;
V

= −4.5 V;

GS

= −1A

I

D

[1]

--−2A

[2]

- 100 120 mΩ

NXP Semiconductors

4

2. Pinning information

Table 2. Pinning

Pin Symbol Description Simplified outline Graphic symbol

1 G gate
2S source
3 D drain

3. Ordering information

Table 3. Ordering information

Type number Package

NX2301P TO-236AB plastic surface-mounted package; 3 leads SOT23

NX2301P

20 V, 2 A P-channel Trench MOSFET

3

12

Name Description Version

D

G

S

017aaa09

4. Marking

Table 4. Marking codes

Type number Marking code

NX2301P MG*

[1] * = placeholder for manufacturing site code

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

GS

I

D

I

DM

drain-source voltage T
gate-source voltage T

=25°C-−20 V

amb

=25°C-±8V

amb

drain current VGS= −4.5 V

T

=25°C-−2A

amb

=100°C-−1.2 A

T

amb

peak drain current T

amb

=25°C;

single pulse; tp≤ 10 μs

[1]

[1]

- −6A

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 2 of 16

NXP Semiconductors

NX2301P

20 V, 2 A P-channel Trench MOSFET

P

(%)

der

120

Table 5. Limiting values

…continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

P

tot

T

j

T

amb

T

stg

total power dissipation T

=25°C

amb

=25°C-2.8W

T

sp

junction temperature 150 °C
ambient temperature −55 +150 °C
storage temperature −65 +150 °C

[2]

-400mW

[1]

-710mW

Source-drain diode

I

S

source current T

amb

=25°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5s.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

017aaa001

80

I

der

(%)

120

80

[1]

- −0.7 A

017aaa002

40

0

−75 17512525 75−25

der

----------------------- -

P

P

P

tot

tot 25°C()

100 %×= I

T

(°C)

amb

Fig 1. Normalized total power dissipation as a

function of ambient temperature

40

0

−75 17512525 75−25

------------------- -

der

I

I

D

D25° C()

100 %×=

T

(°C)

amb

Fig 2. Normalized continuous drain current as a

function of ambient temperature

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 3 of 16

NXP Semiconductors

017aaa095

−10

(A)

Limit R

I

D

−1

DSon

= VDS/I

NX2301P

20 V, 2 A P-channel Trench MOSFET

D

(1)

(2)

−1

−10

−2

−10

−1

−10

I

DM

(1) t

p

(2) t

p

(3) DC; T
(4) t

p

(5) DC; T

= single pulse
=1ms
=10ms

=25°C

sp

= 100 ms

=25°C; drain mounting pad 6 cm

amb

−10−1

2

(3)

(4)

(5)

VDS (V)

Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of

drain-source voltage

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

R

th(j-sp)

thermal resistance from
junction to ambient

thermal resistance from
junction to solder point

in free air

[1]

- - 315 K/W

[2]

- - 175 K/W

--45K/W

−10

2

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

2

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

, t ≤ 5s.

Product data sheet Rev. 1 — 26 October 2010 4 of 16

NXP Semiconductors

017aaa096

NX2301P

20 V, 2 A P-channel Trench MOSFET

3

10

Z

th(j-a)

(K/W)

Fig 4. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values

duty cycle = 1

0.75

0.5

2

10

10

1

−3

10

0.25

0.1

0.02

0

0.33

0.2

0.05

0.01

FR4 PCB, standard footprint

−2

−1

10

10110

2

10

tp (s)

10

3

tp (s)

017aaa097

3

10

3

10

Z

th(j-a)

(K/W)

2

10

10

1
10

duty cycle = 1

0.5

0.25

0.1

0

−3

0.75

0.33

0.2

0.05

0.02

0.01

−2

FR4 PCB, mounting pad for drain 6 cm

−1

10

2

10110

2

10

Fig 5. Transi en t the rmal impe da nce from junction to ambient as a function of pulse duration; typical values

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 5 of 16

NXP Semiconductors

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

g

fs

Dynamic characteristics

Q

G(tot)

Q

GS

Q

GD

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

[1] Pulse test: tp≤ 300 μs; δ≤0.01.

NX2301P

20 V, 2 A P-channel Trench MOSFET

drain-source breakdown
voltage

gate-source threshold
voltage

drain leakage current VDS= −20 V; VGS=0V - - −1 μA
gate leakage current VGS= ±8V; VDS=0V - - ±100 nA
drain-source on-state

resistance

forward
transconductance

total gate charge ID= −2.2 A; VDS= −6V;
gate-source charge - 1.1 - nC
gate-drain charge - 0.9 - nC
input capacitance VGS=0V; VDS= −6V;
output capacitance - 135 - pF
reverse transfer

capacitance
turn-on delay time VDD= −6V;
rise time - 15 - ns
turn-off delay time - 50 - ns
fall time - 25 - ns

source-drain voltage IS= −1A; VGS=0V

ID= −250 μA; VGS=0V −20--V

ID= −250 μA; VDS=V

GS

−0.5 −0.75 −1.1 V

[1]

VGS= −4.5 V; ID= −1A

=25°C 100 120 mΩ

T

j

= 150 °C - 180 mΩ

T

j

= −2.5 V; ID= −1 A - 155 190 mΩ

V

GS

V

GS

= −1.8 V;

- 210 270 mΩ

ID= −0.2 A
VDS= −5V; ID= −2A

[1]

-4.7-S

-4.56nC

VGS= −4.5 V

- 380 - pF

f=1MHz

-115-pF

-7-ns

=6Ω;

R

L

= −4.5 V;

V

GS

R

=6Ω

G

[1]

- −0.8 −1.0 V

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 6 of 16

NXP Semiconductors

017aaa098

017aaa099

NX2301P

20 V, 2 A P-channel Trench MOSFET

−3.0

I

D

(A)

−2.0

−1.0

0.0

0.0 −5.0−4.0−2.0 −3.0−1.0

T

VGS = −2.0 V

=25°CT

amb

−1.8 V

−1.6 V

−1.4 V

−1.2 V

VDS (V)

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical
values

−3

−10

I

D

(A)

−4

−10

(3)

VGS (V)

−5

−10

−6

−10

0.0 −1.5−1.0−0.5

=25°C; VDS= −10 V

amb

(2)(1)

(1) minimum values
(2) typical values
(3) maximum values

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

017aaa100

(3)

(4)

ID (A)

R

DSon

(Ω)

1.0

0.75

0.50

0.25

0.0

(1) V
(2) V
(3) V
(4) V

0.0 −2.5−2.0−1.0 −1.5−0.5

T

=25°C

amb

= −1.4 V

GS

= −1.6 V

GS

= −1.8 V

GS

= −2.0 V

GS

(1) (2)

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values

0.4

R

Dson

(Ω)

0.3

0.2

0.1

0.0

0.0 −8.0−6.0−2.0 −4.0

I

= −2A

D

amb
amb

= 125 °C
=25°C

(1) T
(2) T

017aaa101

(1)

(2)

VGS (V)

Fig 9. Drain-source on-state resistance as a function

of gate-source voltage; typical values

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 7 of 16

NXP Semiconductors

017aaa102

017aaa103

NX2301P

20 V, 2 A P-channel Trench MOSFET

−2.0

I

D

(A)

−1.5

−1.0

−0.5

0.0

0.0 −3.0−2.0−1.0

VDS>ID× R
(1) T
(2) T

amb
amb

= 150 °C
=25°C

(1) (2)

VGS (V)

DSon

Fig 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

−1.5

017aaa104

2.0

a

1.5

1.0

0.5

0.0

−60 180120060

R

a

DSon

=

-----------------------------

R

DSon 25°C()

T

(°C)

amb

Fig 11. Normalized drain-source on-state resistance

as a function of ambient temperature; typical
values

3

10

017aaa105

V

GS(th)

(V)

−1.0

−0.5

0.0

−60 180120060

ID= −0.25 mA; VDS=V

(1)

(2)

(3)

T

(°C)

amb

GS

(1) maximum values
(2) typical values
(3) minimum values

Fig 12. Gate-source threshold voltage as a function of

ambient temperature

(1)

C

(pF)

(2)

2

10

10

−1

−10

f=1MHz; V
(1) C
(2) C
(3) C

iss
oss
rss

GS

=0V

(3)

−10−1

VDS (V)

Fig 13. Input, output and reverse transfer

capacitances as a function of drain-source

voltage; typical values

−10

2

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 8 of 16

NXP Semiconductors

8

NX2301P

20 V, 2 A P-channel Trench MOSFET

−5.0

V

GS

(V)

−4.0

−3.0

−2.0

−1.0

0.0

0.0 5.03.751.25 2.5

ID= −2A; VDS= −6V; T

amb

=25°C

017aaa106

QG (nC)

Fig 14. Gate-source voltage as a function of gate

charge; typical values

−1.0

I

S

(A)

−0.75

V

DS

I

D

V

GS(pl)

V

GS(th)

V

GS

Q

GS1QGS2

Q

G(tot)

Q

GD

003aaa50

Q

GS

Fig 15. Gate charge waveform definitions

017aaa107

(1) (2)

−0.5

−0.25

0.0

0.0 −1.0−0.75−0.25 −0.5

VSD (V)

VGS=0V

amb
amb

= 150 °C
=25°C

(1) T
(2) T

Fig 16. Source current as a function of source-drain voltage; typical values

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 9 of 16

NXP Semiconductors

8. Test information

Fig 17. Duty cycle definition

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

NX2301P

20 V, 2 A P-channel Trench MOSFET

t

t

006aaa812

1

t

2

P

t

1

duty cycle δ =

t

2

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 10 of 16

NXP Semiconductors

3

NX2301P

20 V, 2 A P-channel Trench MOSFET

9. Package outline

Plastic surface-mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

X

v M

A

Q

c

L

p

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

max.

0.1

b

cD

p

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC JEITA

E

1.4

1.9

1.2

REFERENCES

e

e

H

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

0.95

1

2.5

2.1

Fig 18. Package outline SOT23 (TO-236AB)

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 11 of 16

NXP Semiconductors

fr

fw

10. Soldering

NX2301P

20 V, 2 A P-channel Trench MOSFET

3.3

2.9

1.9

solder lands

3

1.7

0.7

(3×)

0.5

(3×)

0.6

(3×)

1

0.6

(3×)

Fig 19. Reflow soldering footprint SOT23 (TO-236AB)

2.2

1.2

(2×)

1.4

(2×)

2

Dimensions in mm

solder resist

solder paste

occupied area

sot023_

solder lands

4.6

2.6

Dimensions in mm

1.4

preferred transport direction during soldering

2.8

4.5

solder resist

occupied area

sot023_

Fig 20. Wave soldering footprint SOT23 (TO-236AB)

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 12 of 16

NXP Semiconductors

NX2301P

20 V, 2 A P-channel Trench MOSFET

11. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

NX2301P v.1 20101026 Product data sheet - -

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 13 of 16

NXP Semiconductors

NX2301P

20 V, 2 A P-channel Trench MOSFET

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the prod uct specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this docu ment may have changed si nce this docum ent was pub lished and may dif fer in case of multiple devices. The latest product statu s

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to co nt ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonabl y be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.

NXP Semiconductors does not accept any liability related to any default ,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell product s that is ope n for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

, unless otherwise

NX2301P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.

Product data sheet Rev. 1 — 26 October 2010 14 of 16

NXP Semiconductors

NX2301P

20 V, 2 A P-channel Trench MOSFET

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

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Product data sheet Rev. 1 — 26 October 2010 15 of 16

NXP Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13 Contact information. . . . . . . . . . . . . . . . . . . . . 15

14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

NX2301P

20 V, 2 A P-channel Trench MOSFET

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2010. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Date of release: 26 October 2010

Document identifier: NX2301P