DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
MMBT3906
PNP switching transistor
Product data sheet
Supersedes data of 2000 Apr 11
2003 Mar 18
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
FEATURES
• Collector current capability IC = −200 mA
• Collector-emitter voltage V
CEO
= −40 V.
APPLICATIONS
• General switching and amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
complement: MMBT3904.
NPN
MARKING
T YPE NUMBER MARKING CODE
(1)
MMBT3906 7B∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
I
CEO
C
collector-emitter voltage −40 V
collector current (DC) −200 mA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −40 V
collector-emitter voltage open base − −40 V
emitter-base voltage open collector − −6 V
collector current (DC) − −200 mA
peak collector current − −200 mA
peak base current − −100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003 Mar 18 2
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = −100 µA; VCE = −5 V;
Switching times (between 10% and 90% levels); see Fig.7
t
d
t
r
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = −30 V − −50 nA
emitter cut-off current IC = 0; VEB = −6 V − −50 nA
DC current gain VCE = −1 V; see Fig.2
IC = −0.1 mA 60 −
IC = −1 mA 80 −
IC = −10 mA 100 300
IC = −50 mA 60 −
IC = −100 mA 30 −
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA − −250 mV
IC = −50 mA; IB = −5 mA − −400 mV
base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV
IC = −50 mA; IB = −5 mA − −950 mV
collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC = ic = 0; VEB = −500 mV;
= 1 MHz
f
transition frequency IC = −10 mA; VCE = −20 V;
= 100 MHz
f
− 10 pF
250 − MHz
− 4 dB
= 1 kΩ; f = 10 Hz to 15.7 kHz
R
S
delay time I
rise time − 35 ns
= −10 mA; I
Con
= 1 mA
I
Boff
= −1 mA;
Bon
− 35 ns
storage time − 225 ns
fall time − 75 ns
2003 Mar 18 3
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
600
handbook, halfpage
h
FE
400
200
0
−1
−10
VCE = −1 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain; typical values.
(1)
(2)
(3)
−1 −10
−10
2
IC (mA)
MHC459
−10
−250
handbook, halfpage
I
C
(mA)
MHC460
(1)
(2)(3)
−200
(4)
−150
−100
−50
3
0
0 −10
−2
T
= 25 °C.
amb
(1) IB = −1.5 mA.
(2) IB = −1.35 mA.
(3) IB = −1.2 mA.
(4) IB = −1.05 mA.
−4 −6 −8
(5) IB = −0.9 mA.
(6) IB = −0.75 mA.
(7) IB = −0.6 mA.
(8) IB = −0.45 mA.
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB = −0.3 mA.
(10)IB = −0.15 mA.
Fig.3 Collector current as a function of
collector-emitter voltage.
−1200
handbook, halfpage
V
BE
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
−200
−1
−1−10
−10 −10
2
IC (mA)
VCE = −1 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.4 Base-emitter voltage as a function of
collector current.
MHC461
−10
−1200
handbook, halfpage
V
BEsat
MHC462
(mV)
−1000
−800
−600
(1)
(2)
(3)
−400
3
−200
−1
−1−10
−10 −10
2
IC (mA)
−10
3
IC/IB = 10.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current.
2003 Mar 18 4
NXP Semiconductors Product data sheet
V
V
PNP switching transistor MMBT3906
3
−10
handbook, halfpage
V
CEsat
MHC463
(mV)
(1)
−10
−10
−10
2
−1
(2)
(3)
−1 −10
−10
2
IC (mA)
IC/IB = 10.
(1) T
= 25 °C.
amb
(2) T
= 150 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 Collector-emitter saturation voltage as a
function of collector current.
−10
3
handbook, full pagewidth
oscilloscope
V
i
(probe)
450 Ω
R2
BB
R
B
CC
R
C
V
(probe)
o
450 Ω
oscilloscope
DUT
R1
MGD624
Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
= 1.9 V; VCC = −3 V.
V
BB
Oscilloscope: input impedance Z
= 50 Ω.
i
Fig.7 Test circuit for switching times.
2003 Mar 18 5
NXP Semiconductors Product data sheet
3
PNP switching transistor MMBT3906
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT2
D
3
A
A
1
12
e
1
b
p
e
w M
B
E
H
E
detail X
AB
Q
L
p
X
v M
A
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
1
A
max.
0.48
0.1
0.38
cD
b
p
0.15
0.09
IEC JEDEC EIAJ
3.0
2.8
E
1.4
1.2
REFERENCES
1.9
e
e
1
0.95
H
2.5
2.1
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Mar 18 6
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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accepts no liability for inclusion and/or use of NXP
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
2003 Mar 18 7
60134) may cause permanent damage to
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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The information presented in this documen t d oes not form part of any quotation or contract, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands 613514/02/pp8 Date of release: 2003 Mar 18 Document order number: 9397 750 10243
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