NXP MMBT3906 Schematic [ru]
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
MMBT3906
PNP switching transistor
Product data sheet
Supersedes data of 2000 Apr 11
2003 Mar 18
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
FEATURES
• Collector current capability IC = −200 mA
• Collector-emitter voltage V
CEO
= −40 V.
APPLICATIONS
• General switching and amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
complement: MMBT3904.
NPN
MARKING
T YPE NUMBER MARKING CODE
(1)
MMBT3906 7B∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
I
CEO
C
collector-emitter voltage −40 V
collector current (DC) −200 mA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
Top view
3
1
21
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − −40 V
collector-emitter voltage open base − −40 V
emitter-base voltage open collector − −6 V
collector current (DC) − −200 mA
peak collector current − −200 mA
peak base current − −100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003 Mar 18 2
NXP Semiconductors Product data sheet
PNP switching transistor MMBT3906
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
F noise figure IC = −100 µA; VCE = −5 V;
Switching times (between 10% and 90% levels); see Fig.7
t
d
t
r
t
s
t
f
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE = 0; VCB = −30 V − −50 nA
emitter cut-off current IC = 0; VEB = −6 V − −50 nA
DC current gain VCE = −1 V; see Fig.2
IC = −0.1 mA 60 −
IC = −1 mA 80 −
IC = −10 mA 100 300
IC = −50 mA 60 −
IC = −100 mA 30 −
collector-emitter saturation
voltage
IC = −10 mA; IB = −1 mA − −250 mV
IC = −50 mA; IB = −5 mA − −400 mV
base-emitter saturation voltage IC = −10 mA; IB = −1 mA − −850 mV
IC = −50 mA; IB = −5 mA − −950 mV
collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF
emitter capacitance IC = ic = 0; VEB = −500 mV;
= 1 MHz
f
transition frequency IC = −10 mA; VCE = −20 V;
= 100 MHz
f
− 10 pF
250 − MHz
− 4 dB
= 1 kΩ; f = 10 Hz to 15.7 kHz
R
S
delay time I
rise time − 35 ns
= −10 mA; I
Con
= 1 mA
I
Boff
= −1 mA;
Bon
− 35 ns
storage time − 225 ns
fall time − 75 ns
2003 Mar 18 3
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