NXP MMBT3904 Schematic [ru]
DATA SH EET
ook, halfpage
DISCRETE SEMICONDUCTORS
M3D088
MMBT3904
NPN switching transistor
Product data sheet
Supersedes data of 2002 Oct 04
2004 Feb 03
NXP Semiconductors Product data sheet
NPN switching transistor MMBT3904
FEATURES
• Collector current capability IC = 200 mA
• Collector-emitter voltage V
CEO
= 40 V.
APPLICATIONS
• General switching and amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic pack age.
complement: MMBT3906.
PNP
MARKING
T YPE NUMBER MARKING CODE
(1)
MMBT3904 7A∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
I
CEO
C
collector-emitter voltage 40 V
collector current (DC) 200 mA
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
3
1
21
3
2
Top view
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
MMBT3904 − plastic surface mounted package; 3 leads SOT23
2004 Feb 03 2
NXP Semiconductors Product data sheet
NPN switching transistor MMBT3904
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 200 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Feb 03 3
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