NXP MMBT3904 Schematic [ru]

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D088

MMBT3904

NPN switching transistor

Product data sheet
Supersedes data of 2002 Oct 04

2004 Feb 03

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

FEATURES

• Collector current capability IC = 200 mA

• Collector-emitter voltage V

CEO

= 40 V.

APPLICATIONS

• General switching and amplification.

DESCRIPTION

NPN switching transistor in a SOT23 plastic pack age.

complement: MMBT3906.

PNP

MARKING

T YPE NUMBER MARKING CODE

(1)

MMBT3904 7A∗

Note

1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V
I

CEO

C

collector-emitter voltage 40 V
collector current (DC) 200 mA

PINNING

PIN DESCRIPTION

1 base
2 emitter
3 collector

handbook, halfpage

3

1

21

3

2

Top view

MAM255

Fig.1 Simplified outline (SOT23) and symbol.

ORDERING INFORMATION

PACKAGE

T YPE NUMBER

NAME DESCRIPTION VERSION

MMBT3904 − plastic surface mounted package; 3 leads SOT23

2004 Feb 03 2

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

I

CM

I

BM

P

tot

T

stg

T

j

T

amb

Note

1. Transistor mounted on an FR4 printed-circuit board.

collector-base voltage open emitter − 60 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 6 V
collector current (DC) − 200 mA
peak collector current − 200 mA
peak base current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

thermal resistance from junction to ambient note 1 500 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

2004 Feb 03 3

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

C

e

f

T

F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ;

Switching times (between 10% and 90% levels); see Fig.3
t

d

t

r

t

s

t

f

collector cut-off current IE = 0; VCB = 30 V − 50 nA
emitter cut-off current IC = 0; VEB = 6 V − 50 nA
DC current gain VCE = 1 V; see Fig.2; note 1

IC = 0.1 mA 60 −
IC = 1 mA 80 −
IC = 10 mA 100 300
IC = 50 mA 60 −
IC = 100 mA 30 −

collector-emitter saturation
voltage

IC = 10 mA; IB = 1 mA − 200 mV
IC = 50 mA; IB = 5 mA − 300 mV

base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 850 mV

IC = 50 mA; IB = 5 mA − 950 mV
collector capacitance IE = Ie = 0; VCB = 5 V; f = 1 MHz − 4 pF
emitter capacitance IC = Ic = 0; VBE = 500 mV;

= 1 MHz

f
transition frequency IC = 10 mA; VCE = 20 V;

f

= 100 MHz

− 8 pF

300 − MHz

− 5 dB

= 10 Hz to 15.7 kHz

f

delay time I
rise time − 35 ns

= 10 mA; I

Con

= −1 mA

I

Boff

= 1 mA;

Bon

− 35 ns

storage time − 200 ns
fall time − 50 ns

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

2004 Feb 03 4

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

500

handbook, halfpage

h

FE

400

300

200

100

0

−1

10

VCE = 1 V.
(1) T

= 150 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= −55 °C.

amb

Fig.2 DC current gain; typical values.

MGU821

(1)

(2)

(3)

11010210

IC (mA)

250

handbook, halfpage

I

C

(mA)

(1) (2) (3) (4) (5) (6) (7)

MGU822

200

150

(8)
(9)

100

(10)

50

3

0

062810

T

= 25 °C.

amb

(1) IB = 5 mA.
(2) IB = 4.5 mA.
(3) IB = 4 mA.
(4) IB = 3.5 mA.

4

(5) IB = 3 mA.
(6) IB = 2.5 mA.
(7) IB = 2 mA.
(8) IB = 1.5 mA.

VCE (V)

(9) IB = 1 mA.
(10)IB = 0.5 mA.

Fig.3 Collector current as a function of

collector-emitter voltage.

1200

handbook, halfpage

V

BE

(mV)

1000

(1)

800

(2)

600

400

200

−1

10

(3)

11010210

IC (mA)

VCE = 1 V.
(1) T

= −55 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= 150 °C.

amb

Fig.4 Base-emitter voltage as a function of

collector current.

MGU823

1200

handbook, halfpage

V

BEsat

MGU824

(mV)

1000

(1)

800

600

(2)

(3)

400

200

3

−1

10

11010210

IC (mA)

3

IC/IB = 10.
(1) T

= −55 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= 150 °C.

amb

Fig.5 Base-emitter saturation voltage as a

function of collector current.

2004 Feb 03 5

NXP Semiconductors Product data sheet

V

V

NPN switching transistor MMBT3904

3

10

handbook, halfpage

V

CEsat

MGU825

(mV)

(1)

(2)

2

10

10

−1

10

11010

(3)

2

IC (mA)

IC/IB = 10.
(1) T

= 150 °C.

amb

(2) T

= 25 °C.

amb

(3) T

= −55 °C.

amb

Fig.6 Collector-emitter saturation voltage as a

function of collector current.

3

10

handbook, full pagewidth

oscilloscope

V

i

(probe)

450 Ω

R2

BB

R

B

CC

R

C

V

(probe)

o

450 Ω

oscilloscope

DUT

R1

MLB826

Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.

= −1.9 V; VCC = 3 V.

V

BB

Oscilloscope: input impedance Z

= 50 Ω.

i

Fig.7 Test circuit for switching times.

2004 Feb 03 6

NXP Semiconductors Product data sheet

3

NPN switching transistor MMBT3904

PACKAGE OUTLINE

Plastic surface-mounted package; 3 leads SOT2

D

3

A

A

1

12

e

1

b

p

e

w

M

B

E

H

E

detail X

AB

Q

L

p

X

v

M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

b

cD

p

0.48

0.15

0.09

3.0

2.8

0.38

IEC JEDEC JEITA

e

E

1.4

1.9

1.2

REFERENCES

0.95

e

H

L

Qwv

1

2.5

2.1

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Feb 03 7

NXP Semiconductors Product data sheet

NPN switching transistor MMBT3904

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

DISCLAIMERS
General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.

Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.

Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT

STATUS

(2)

development.

DEFINITION

System of IEC
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.

No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

60134) may cause permanent damage to

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings

2004 Feb 03 8

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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The information presented in this documen t d oes not form part of any quotation or contract, is believe d t o b e a ccurate and reliable and may be changed
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under patent- or other industri al or intellectual property right s.

Printed in The Netherlands R75/04/pp9 Date of release: 2004 Feb 03 Document order number: 9397 750 12624