NXP BZX84J-B10, BZX84J-B11, BZX84J-B12, BZX84J-B13, BZX84J-B15 Schematic [ru]

SOD323F

21

006aaa152

2

1

BZX84J series

Single Zener diodes

Rev. 2 — 1 August 2011 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Non-repetitive peak reverse power

dissipation:  40 W

 Total power dissipation:  550 mW  Two tolerance series: 2%and5%
 AEC-Q101 qualified  Low differential resistance
 Small plastic package suitable for

surface-mounted design

 Wide working voltage range: nominal

2.4 V to 75 V (E24 range)

1.3 Applications

 General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V
P

F
ZSM

forward voltage IF=100mA
non-repetitive peak reverse

power dissipation

[1] Pulse test: tp 300 s; 0.02.
[2] t

=100s; square wave; Tj=25C prior to surge

p

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 cathode
2 anode

[1]

--1.1V

[2]

--40W

[1]

[1] The marking bar indicates the cathode.

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BZX84J-B2V4 to B
ZX84J-C75

[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

[1]

4. Marking

BZX84J series

Single Zener diodes

Name Description Version

SC-90 plastic surface-mounted package; 2 leads SOD323F

code

Type number Marking

code

Type number Marking

code

Ty pe number Marking

code

Table 4. Marking codes

Type number Marking

BZX84J-B2V4 SL BZX84J-B15 SC BZX84J-C2V4 U3 BZX84J-C15 TV
BZX84J-B2V7 SM BZX84J-B16 SD BZX84J-C2V7 U4 BZX84J-C16 TW
BZX84J-B3V0 ST BZX84J-B18 SE BZX84J-C3V0 U9 BZX84J-C18 TX
BZX84J-B3V3 SU BZX84J-B20 SF BZX84J-C3V3 UA BZX84J-C20 TY
BZX84J-B3V6 SV BZX84J-B22 SG BZX84J-C3V6 UB BZX84J-C22 TZ
BZX84J-B3V9 SW BZX84J-B24 SH BZX84J-C3V9 UC BZX84J-C24 U1
BZX84J-B4V3 SZ BZX84J-B27 SK BZX84J-C4V3 UF BZX84J-C27 U2
BZX84J-B4V7 TA BZX84J-B30 SN BZX84J-C4V7 UG BZX84J-C30 U5
BZX84J-B5V1 TD BZX84J-B33 SP BZX84J-C5V1 UL BZX84J-C33 U6
BZX84J-B5V6 TE BZX84J-B36 SR BZX84J-C5V6 UM BZX84J-C36 U7
BZX84J-B6V2 TH BZX84J-B39 SS BZX84J-C6V2 UR BZX84J-C39 U8
BZX84J-B6V8 TK BZX84J-B43 SX BZX84J-C6V8 US BZX84J-C43 UD
BZX84J-B7V5 TM BZX84J-B47 SY BZX84J-C7V5 UU BZX84J-C47 UE
BZX84J-B8V2 TN BZX84J-B51 TB BZX84J-C8V2 UV BZX84J-C51 UH
BZX84J-B9V1 TP BZX84J-B56 TC BZX84J-C9V1 UW BZX84J-C56 UK
BZX84J-B10 S8 BZX84J-B62 TF BZX84J-C10 TR BZX84J-C62 UN
BZX84J-B11 S9 BZX84J-B68 TG BZX84J-C11 TS BZX84J-C68 UP
BZX84J-B12 SA BZX84J-B75 TL BZX84J-C12 TT BZX84J-C75 UT
BZX84J-B13 SB - - BZX84J-C13 TU - -

BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 1 August 2011 2 of 13

NXP Semiconductors

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

I

F

I

ZSM

P

ZSM

P

tot

T

j

T

amb

T

stg

[1] tp=100s; square wave; Tj=25C prior to surge
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

cathode 1 cm

BZX84J series

Single Zener diodes

forward current - 250 mA
non-repetitive peak reverse

current

non-repetitive peak reverse
power dissipation

total power dissipation T

amb

 25 C
junction temperature - 150 C
ambient temperature 55 +150 C
storage temperature 65 +150 C

2

.

[1]

-see

Table 8

and 9

[1]

-40W

[2]

-550mW

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from
junction to ambient

R

th(j-sp)

thermal resistance from
junction to solder point

[1] Device mounted on an FR4 PCB, sing le-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[2] Soldering point of cathode tab.

7. Characteristics

Table 7. Characteristics

=25C unless otherwise specified.

T

j

Symbol Parameter Conditions Min Typ Max Unit

V

F

[1] Pulse test: tp 300 s; 0.02.

forward voltage

in free air

[1]

- - 230 K/W

[2]

--55K/W

[1]

IF=10mA --0.9V

= 100 mA - - 1.1 V

I

F

BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 1 August 2011 3 of 13

NXP Semiconductors

BZX84J series

Single Zener diodes

Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24

Tj=25C unless otherwise specified.

BZX84J­xxx

Sel Working

voltage
VZ(V)

Differential
resistance

r

()

dif

Reverse
current

IR(A)

T emperature
coefficient

SZ(mV/K)

Diode
capacitance

Cd(pF)

[1]

Non-repetitive
peak reverse
current

ZSM

(A)

[2]

I
IZ=5mA IZ=1mA IZ=5mA IZ=5mA
Min Max Max Max Max VR(V) Min Max Max Max

2V4 B 2.35 2.45 400 100 50 1 3.5 0 450 12

C2.22.6

2V7 B 2.65 2.75 450 100 20 1 3.5 0 440 12

C2.52.9

3V0 B 2.94 3.06 500 95 10 1 3.5 0 425 12

C2.83.2

3V3 B 3.23 3.37 500 95 5 1 3.5 0 410 12

C3.13.5

3V6 B 3.53 3.67 500 90 5 1 3.5 0 390 12

C3.43.8

3V9 B 3.82 3.98 500 90 3 1 3.5 0 370 12

C3.74.1

4V3 B 4.21 4.39 600 90 3 1 3.5 0 350 12

C4 4.6

4V7 B 4.61 4.79 500 80 3 2 3.5 0.2 325 12

C4.45

5V1 B 5 5.2 480 60 2 2 2.7 1.2 300 12

C4.85.4

5V6 B 5.49 5.71 400 40 1 2 22.5275 12

C5.26

6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 250 12

C5.86.6

6V8 B 6.66 6.94 80 15 2 4 1.2 4.5 215 12

C6.47.2

7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 170 4

C7 7.9

8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4

C7.78.7

9V1 B 8.92 9.28 100 10 0.5 6 3.8 7 120 3

C8.59.6

10 B 9.8 10.2 150 10 0.2 7 4.5 8 110 3

C 9.4 10.6

11 B 10.8 11.2 150 10 0.1 8 5.4 9 108 2.5

C 10.4 11.6

12 B 11.8 12.2 150 10 0.1 8 6 10 105 2.5

C 11.4 12.7

BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 1 August 2011 4 of 13

NXP Semiconductors

BZX84J series

Single Zener diodes

Table 8. Characteristics per type; BZX84J-B2V4 to BZX84J-C24

…continued

Tj=25C unless otherwise specified.

BZX84J­xxx

Sel Working

voltage
V

(V)

Z

Differential
resistance

r

()

dif

Reverse
current

I

(A)

R

T emperature
coefficient

S

(mV/K)

Z

Diode
capacitance

d

(pF)

[1]

C

Non-repetitive

peak reverse

current

I

ZSM

IZ=5mA IZ=1mA IZ=5mA IZ=5mA
Min Max Max Max Max VR(V) Min Max Max Max

13 B 12.7 13.3 170 10 0.1 8 7 11 103 2.5

C 12.4 14.1

15 B 14.7 15.3 200 15 0.05 10.5 9.2 13 99 2

C 13.8 15.6

16 B 15.7 16.3 200 20 0.05 11.2 10.4 14 97 1.5

C 15.3 17.1

18 B 17.6 18.4 225 20 0.05 12.6 12.4 16 93 1.5

C 16.8 19.1

20 B 19.6 20.4 225 20 0.05 14 14.4 18 88 1.5

C 18.8 21.2

22 B 21.6 22.4 250 25 0.05 15.4 16.4 20 84 1.25

C 20.8 23.3

24 B 23.5 24.5 250 30 0.05 16.8 18.4 22 80 1.25

C 22.8 25.6

(A)

[2]

[1] f = 1 MHz; VR=0V

= 100 s; square wave; Tj=25C prior to surge

[2] t

p

BZX84J_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.

Product data sheet Rev. 2 — 1 August 2011 5 of 13