NXP BZX84-A10, BZX84-A11, BZX84-A12, BZX84-A13, BZX84-A15 Schematic [ru]

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DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D088

BZX84 series

Voltage regulator diodes

Product data sheet Supersedes data of 1999 May 18

2003 Apr 10

NXP Semiconductors Product data sheet

Top view

Voltage regulator diodes BZX84 series

FEATURES

• Total power dissipation: max. 250 mW

• Three tolerance series: ±1%, ±2% and approx. ±5%

• Working voltage range: nom. 2.4 to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation:

40 W.

max.

APPLICATIONS

• General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in small SOT23 plastic SMD packages.

The diodes are available in the normalized E24 ±1% (BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C) tolerance range. The nominal working voltages from 2.4

series consists of 37 types with

to 75 V.

PINNING

PIN DESCRIPTION

1 anode 2 not connected 3 cathode

handbook, halfpage

n.c.

Fig.1 Simplified outline (SOT23) and symbol.

MAM243

2003 Apr 10 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX84 series

MARKING

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

(1)

CODE

TYPE

NUMBER

MARKING

(1)

CODE

Marking codes for BZX84-A2V4 to BZX84-A75

BZX84-A2V4 Y50 or ∗50 BZX84-A6V2 Y60 or ∗60 BZX84-A16 Y70 BZX84-A43 Y80 or ∗C5 BZX84-A2V7 Y51 or ∗51 BZX84-A6V8 Y61 or ∗61 BZX84-A18 Y71 BZX84-A47 Y81 BZX84-A3V0 Y52 or ∗52 BZX84-A7V5 Y62 or ∗62 BZX84-A20 Y72 or ∗C2 BZX84-A51 Y82 or ∗C6 BZX84-A3V3 Y53 BZX84-A8V2 Y63 or ∗63 BZX84-A22 Y73 BZX84-A56 Y83 BZX84-A3V6 Y54 or ∗C1 BZX84-A9V1 Y64 or ∗64 BZX84-A24 Y74 BZX84-A62 Y84 BZX84-A3V9 Y55 or ∗55 BZX84-A10 Y65 or ∗65 BZX84-A27 Y75 or ∗75 BZX84-A68 Y85 BZX84-A4V3 Y56 or ∗56 BZX84-A11 Y66 or ∗04 BZX84-A30 Y76 BZX84-A75 Y86 or ∗86 BZX84-A4V7 Y57 or ∗57 BZX84-A12 Y67 or ∗67 BZX84-A33 Y77 − − BZX84-A5V1 Y58 or ∗58 BZX84-A13 Y68 or ∗C0 BZX84-A36 Y78 or ∗C3 − − BZX84-A5V6 Y59 or ∗59 BZX84-A15 Y69 or ∗69 BZX84-A39 Y79 or ∗C4 − −

Marking codes for BZX84-B2V4 to BZX84-B75

BZX84-B2V4 Z50 or ∗Z0 BZX84-B6V2 Z60 or ∗R5 BZX84-B16 Z70 or ∗70 BZX84-B43 Z80 or ∗S5 BZX84-B2V7 Z51 or ∗Z1 BZX84-B6V8 Z61 or ∗R6 BZX84-B18 Z71 or ∗71 BZX84-B47 Z81 or ∗S6 BZX84-B3V0 Z52 or ∗S1 BZX84-B7V5 Z62 or ∗R8 BZX84-B20 Z72 or ∗72 BZX84-B51 Z82 or ∗S9 BZX84-B3V3 Z53 or ∗S2 BZX84-B8V2 Z63 or ∗R9 BZX84-B22 Z73 or ∗73 BZX84-B56 Z83 or ∗R0 BZX84-B3V6 Z54 or ∗S3 BZX84-B9V1 Z64 or ∗T1 BZX84-B24 Z74 or ∗74 BZX84-B62 Z84 or ∗R3 BZX84-B3V9 Z55 or ∗S4 BZX84-B10 Z65 or ∗66 BZX84-B27 Z75 or ∗Z5 BZX84-B68 Z85 or ∗R4 BZX84-B4V3 Z56 or ∗S7 BZX84-B11 Z66 or ∗Z6 BZX84-B30 Z76 or ∗Z4 BZX84-B75 Z86 or ∗R7 BZX84-B4V7 Z57 or ∗S8 BZX84-B12 Z67 or ∗Z7 BZX84-B33 Z77 or ∗Y1 − − BZX84-B5V1 Z58 or ∗R1 BZX84-B13 Z68 or ∗Z8 BZX84-B36 Z78 or ∗Y2 − − BZX84-B5V6 Z59 or ∗R2 BZX84-B15 Z69 or ∗Z9 BZX84-B39 Z79 or ∗S0 − −

Marking codes for BZX84-C2V4 to BZX84-C75

BZX84-C2V4 Z11 or ∗T3 BZX84-C6V2 Z4∗ BZX84-C16 Y5∗ BZX84-C43 Y15 or ∗B4 BZX84-C2V7 Z12 or ∗T4 BZX84-C6V8 Z5∗ BZX84-C18 Y6∗ BZX84-C47 Y16 or ∗B5 BZX84-C3V0 Z13 or ∗T9 BZX84-C7V5 Z6∗ BZX84-C20 Y7∗ BZX84-C51 Y17 or ∗B7 BZX84-C3V3 Z14 or ∗B1 BZX84-C8V2 Z7∗ BZX84-C22 Y8∗ BZX84-C56 Y18 or ∗B8 BZX84-C3V6 Z15 or ∗B2 BZX84-C9V1 Z8∗ BZX84-C24 Y9∗ BZX84-C62 Y19 or ∗B9 BZX84-C3V9 Z16 or ∗B3 BZX84-C10 Z9∗ BZX84-C27 Y10 or ∗T2 BZX84-C68 Y20 or ∗B0 BZX84-C4V3 Z17 or ∗B6 BZX84-C11 Y1∗ BZX84-C30 Y11 or ∗T5 BZX84-C75 Y21 or ∗A1 BZX84-C4V7 Z1∗ BZX84-C12 Y2∗ BZX84-C33 Y12 or ∗T6 − − BZX84-C5V1 Z2∗ BZX84-C13 Y3∗ BZX84-C36 Y13 or ∗T7 − − BZX84-C5V6 Z3∗ BZX84-C15 Y4∗ BZX84-C39 Y14 or ∗T8 − −

Note

1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. ∗ = W : Made in China.

2003 Apr 10 3

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX84 series

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

ZSM

tot

ZSM

stg

Note

1. Device mounted on an FR4 printed circuit-board.

ELECTRICAL CHARACTERISTICS

continuous forward current − 200 mA non-repetitive peak reverse current tp = 100 μs; square wave;

= 25 °C prior to surge

total power dissipation T non-repetitive peak reverse power

dissipation

= 25 °C; note 1 − 250 mW

amb

tp = 100 μs; square wave;

= 25 °C prior to surge; see Fig.2

see Tables 1 and 2

− 40 W

storage temperature −65 +150 °C junction temperature −65 +150 °C

Total BZX84-A and B and C series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

forward voltage IF = 10 mA; see Fig.3 0.9 V reverse current

BZX84-A/B/C2V4 VR = 1 V 50 μA BZX84-A/B/C2V7 VR = 1 V 20 μA BZX84-A/B/C3V0 VR = 1 V 10 μA BZX84-A/B/C3V3 VR = 1 V 5 μA BZX84-A/B/C3V6 VR = 1 V 5 μA BZX84-A/B/C3V9 VR = 1 V 3 μA BZX84-A/B/C4V3 VR = 1 V 3 μA BZX84-A/B/C4V7 VR = 2 V 3 μA BZX84-A/B/C5V1 VR = 2 V 2 μA BZX84-A/B/C5V6 VR = 2 V 1 μA BZX84-A/B/C6V2 VR = 4 V 3 μA BZX84-A/B/C6V8 VR = 4 V 2 μA BZX84-A/B/C7V5 VR = 5 V 1 μA BZX84-A/B/C8V2 VR = 5 V 700 nA BZX84-A/B/C9V1 VR = 6 V 500 nA BZX84-A/B/C10 VR = 7 V 200 nA BZX84-A/B/C11 VR = 8 V 100 nA BZX84-A/B/C12 VR = 8 V 100 nA BZX84-A/B/C13 VR = 8 V 100 nA BZX84-A/B/C15 to 75 VR = 0.7V

Znom

50 nA

2003 Apr 10 4

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