NXP BZX 79-C3V3 NXP Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

6

M3D17

BZX79 series

Voltage regulator diodes

Product data sheet
Supersedes data of 1999 May 25

2002 Feb 27

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

FEATURES

• Total power dissipation: max. 500 mW

• Two tolerance series: ±2%, and approx. ±5%

• Working voltage range: nom. 2.4 to 75 V (E24 range)

• Non-repetitive peak reverse power dissipation:

40 W.

max.

handbook, halfpage

APPLICATIONS

• Low voltage stabilizers or voltage references.

DESCRIPTION

ka

MAM239

Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24 ±2% (BZX79-B) and
approx.

±5% (BZX79-C) tolerance range. The series

consists of 37 types with nominal working voltages from

to 75 V.

2.4

The diodes are type branded.

Fig.1 Simplified outline (SOD27; DO-35) and

symbol.

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

F

I

ZSM

P

P

T
T

tot

ZSM

stg
j

continuous forward current − 250 mA
non-repetitive peak reverse current tp = 100 μs; square wave;

= 25 °C prior to surge

T

j

total power dissipation T

non-repetitive peak reverse power
dissipation

= 50 °C; note 1 − 400 mW

amb

T

= 50 °C; note 2 − 500 mW

amb

tp = 100 μs; square wave;

= 25 °C prior to surge; see Fig.3

T

j

see Tables 1 and 2 A

− 40 W

storage temperature −65 +200 °C
junction temperature −65 +200 °C

Notes

1. Device mounted on a printed circuit-board withou t metallization pad; lead length max.

2. Tie-point temperature ≤ 50 °C; max. lead length 8 mm.

ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

V

F

forward voltage IF = 10 mA; see Fig.4 0.9 V

2002 Feb 27 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

R

reverse current

BZX79-B/C2V4 VR = 1 V 50 μA
BZX79-B/C2V7 VR = 1 V 20 μA
BZX79-B/C3V0 VR = 1 V 10 μA
BZX79-B/C3V3 VR = 1 V 5 μA
BZX79-B/C3V6 VR = 1 V 5 μA
BZX79-B/C3V9 VR = 1 V 3 μA
BZX79-B/C4V3 VR = 1 V 3 μA
BZX79-B/C4V7 VR = 2 V 3 μA
BZX79-B/C5V1 VR = 2 V 2 μA
BZX79-B/C5V6 VR = 2 V 1 μA
BZX79-B/C6V2 VR = 4 V 3 μA
BZX79-B/C6V8 VR = 4 V 2 μA
BZX79-B/C7V5 VR = 5 V 1 μA
BZX79-B/C8V2 VR = 5 V 700 nA
BZX79-B/C9V1 VR = 6 V 500 nA
BZX79-B/C10 VR = 7 V 200 nA
BZX79-B/C11 VR = 8 V 100 nA
BZX79-B/C12 VR = 8 V 100 nA
BZX79-B/C13 VR = 8 V 100 nA
BZX79-B/C15 to BZX79-B/C75 VR = 0.7V

Znom

50 nA

2002 Feb 27 3

2002 Feb 27 4

Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24
Tj = 25 °C unless otherwise specified.

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

BZX79-

Bxxx
Cxxx

WORKING VOLTAGE

V

(V)

Z

I

Ztest

= 5 mA

Tol. approx.

at

Tol. ±2% (B)

±5%

(C)

DIFFERENTIAL RESISTANCE

r

(Ω)

dif

at I

= 1 mA at I

Ztest

Ztest

= 5 mA

TEMP. COEFF.

S

(mV/K)

Z

I

Ztest

= 5 mA

at

(see Figs 5 and 6)

DIODE CAP.

C

(pF)

d

f = 1 MHz;

at

= 0 V

V

R

NON-REPETITIVE PEAK

tp = 100 μs; T

at

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0
2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0
3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0
3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0
3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0
3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0
4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0
4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0
5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0
5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0
6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0
6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0
7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0
8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0
9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0
10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0
11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5
13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0
16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5
22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25
24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25

REVERSE CURRENT

(A)

I

ZSM

= 25 °C

amb

2002 Feb 27 5

Table 2 Per type, BZX79-B/C27 to BZX79-B/C75
Tj = 25 °C unless otherwise specified.

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

BZX79-

Bxxx
Cxxx

WORKING VOLTAGE

V

(V)

Z

I

Ztest

= 2 mA

Tol. approx.

at

Tol. ±2% (B)

±5%

(C)

DIFFERENTIAL RESISTANCE

r

(Ω)

dif

at I

= 0.5 mA at I

Ztest

Ztest

= 2 mA

TEMP. COEFF.

S

(mV/K)

Z

I

Ztest

= 2 mA

at

(see Figs 5 and 6)

DIODE CAP.

C

(pF)

d

f = 1 MHz;

at

= 0 V

V

R

NON-REPETITIVE PEAK

tp = 100 μs; T

at

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.

27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0
30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0
33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9
36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8
39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7
43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6
47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5
51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4
56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3
62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3
68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25
75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2

REVERSE CURRENT

(A)

I

ZSM

= 25 °C

amb

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-tp

R

th j-a

Note

1. Device mounted on a printed circuit-board without metallization pad.

GRAPHICAL DATA

thermal resistance from junction to tie-point lead length 8 mm. 300 K/W
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1 380 K/W

3

10

handbook, full pagewidth

R

th j-a

(K/W)

2

10

10

1

−1

10

δ = 1

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01
≤0.001

t

p

T

11010210

3

4

10

Fig.2 Thermal resistance from junction to ambient as a function of puls e duration.

δ

=

tp (ms)

MBG930

t

p

T

5

10

2002 Feb 27 6

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

3

10

handbook, halfpage

P

ZSM
(W)

2

10

10

1

−1

10

(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).

(1)

(2)

1 duration (ms)

MBG801

Fig.3 Maximum permissible non-repetitive peak

reverse power dissipation versus duration.

300

handbook, halfpage

I

F

(mA)

200

100

0

10

0.6 1

Tj = 25 °C.

0.8

MBG781

VF (V)

Fig.4 Typical forward current as a function of

forward voltage.

handbook, halfpage

0

S

Z

(mV/K)

−1

−2

−3

060

BZX79-B/C2V4 to BZX79-B/C4V3.

Tj = 25 to 150 °C.

20 40

4V3

MBG783

3V9

3V6

3V3

3V0

2V4
2V7

IZ (mA)

Fig.5 Temperature coefficient as a function of

working current; typical values.

10

handbook, halfpage

S

Z

(mV/K)

5

0

−5
02016

BZX79-B/C4V7 to BZX79-B/C12.

T

= 25 to 150 °C.

j

4812

12
11

10
9V1
8V2

7V5
6V8

6V2
5V6
5V1

4V7

MBG782

IZ (mA)

Fig.6 Temperature coefficient as a function of

working current; typical values.

2002 Feb 27 7

NXP Semiconductors Product data sheet

Hermetically sealed glass package; axial leaded; 2 leads

SOD27

Voltage regulator diodes BZX79 series

PACKAGE OUTLINE

(1)

b

LD L

DIMENSIONS (mm are the original dimensions)

G

UNIT

mm

Note

1. The marking band indicates the cathode.

b

max.

0.56

OUTLINE
VERSION

SOD27 DO-35A24 SC-40

D

max.

max.

IEC JEDEC EIAJ

L

1

min.

25.44.251.85

REFERENCES

G

1

0 1 2 mm

scale

EUROPEAN

PROJECTION

ISSUE DATE

97-06-09

2002 Feb 27 8

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX79 series

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2002 Feb 27 9

60134) may cause permanent damage to

NXP Semiconductors

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Printed in The Netherlands 613514/03/pp10 Date of release: 2002 Feb 27 Document order number: 9397 750 09387