DISCRETE SEMICONDUCTORS
BZX585 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2004 Mar 26
2004 Jun 22
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX585 series
FEATURES
• Total power dissipation: max. 300 mW
• Two tolerance series: ± 2 % and ± 5 %
• Working voltage range: nominal 2.4 V to 75 V
(E24
range)
• Non-repetitive peak reverse power dis sip ation: max.
W.
40
APPLICATIONS
• General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes encapsulated in an
ultra small SOD523 plastic
SMD package.
The diodes are available in the normalized E24 ± 2 %
(BZX585-B) and
± 5 % (BZX585-C) tolerance range.
The series consists of 37 types with nominal working
voltages from 2.4
V to 75 V.
MARKING
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
The marking bar indicates the cathode.
12
MAM387
Fig.1 Simplified outline (SOD523) and symbol.
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-B2V4 to BZX585-B75
BZX585-B2V4 C1 BZX585-B6V2 E1 BZX585-B16 EA BZX585-B43 EM
BZX585-B2V7 C2 BZX585-B6V8 E2 BZX585-B18 EB BZX585-B47 EN
BZX585-B3V0 C3 BZX585-B7V5 E3 BZX585-B20 EC BZX585-B51 EP
BZX585-B3V3 C4 BZX585-B8V2 E4 BZX585-B22 ED BZX585-B56 ER
BZX585-B3V6 C5 BZX585-B9V1 E5 BZX585-B24 EE BZX585-B62 ES
BZX585-B3V9 C6 BZX585-B10 E6 BZX585-B27 EF BZX585-B68 ET
BZX585-B4V3 C7 BZX585-B11 E7 BZX585-B30 EG BZX585-B75 EU
BZX585-B4V7 C8 BZX585-B12 E8 BZX585-B33 EH
BZX585-B5V1 C9 BZX585-B13 E9 BZX585-B36 EK
BZX585-B5V6 C0 BZX585-B15 E0 BZX585-B39 EL
2004 Jun 22 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX585 series
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX585-C2V4 to BZX585-C75
BZX585-C2V4 F1 BZX585-C6V2 H1 BZX585-C16 HA BZX585-C43 HM
BZX585-C2V7 F2 BZX585-C6V8 H2 BZX585-C18 HB BZX585-C47 HN
BZX585-C3V0 F3 BZX585-C7V5 H3 BZX585-C20 HC BZX585-C51 HP
BZX585-C3V3 F4 BZX585-C8V2 H4 BZX585-C22 HD BZX585-C56 HR
BZX585-C3V6 F5 BZX585-C9V1 H5 BZX585-C24 HE BZX585-C62 HS
BZX585-C3V9 F6 BZX585-C10 H6 BZX585-C27 HF BZX585-C68 HT
BZX585-C4V3 F7 BZX585-C11 H7 BZX585-C30 HG BZX585-C75 HU
BZX585-C4V7 F8 BZX585-C12 H8 BZX585-C33 HH
BZX585-C5V1 F9 BZX585-C13 H9 BZX585-C36 HK
BZX585-C5V6 F0 BZX585-C15 H0 BZX585-C39 HL
ORDERING INFORMATION
TYPE
NUMBER
BZX585-B2V4
NAME DESCRIPTION VERSION
− Plastic surface mounted packag e; 2 leads SOD523
PACKAGE
to
BZX585-B75
BZX585-C2V4
− Plastic surface mounted packag e; 2 leads SOD523
to
BZX585-C75
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
P
T
T
ZSM
tot
stg
j
continuous forward current − 200 mA
non-repetitive peak reverse
current
non-repetitive peak reverse
power dissipation
total power dissipation T
storage temperature
tp = 100 μs; square wave;
T
= 25 °C prior to surge
amb
tp = 100 μs; square wave;
= 25 °C prior to surge
T
amb
= 25 °C; note 1 − 300 mW
amb
see Tables 1 and 2
− 40 W
65
−
+150
C
°
junction temperature −65 +150 °C
Note
1. Device mounted on an FR4 printed-circuit board with approxima t ely 35 mm2 Cu area at cathode tab.
2004 Jun 22 3
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX585 series
ELECTRICAL CHARACTERISTICS
Total BZX585-B and C series
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
I
R
forward voltage IF = 10 mA; see Fig.2 0.9 V
IF = 100 mA; see Fig.2 1.1 V
reverse current
BZX585-B/C2V4 VR = 1 V 50 μA
BZX585-B/C2V7 VR = 1 V 20 μA
BZX585-B/C3V0 VR = 1 V 10 μA
BZX585-B/C3V3 VR = 1 V 5 μA
BZX585-B/C3V6 VR = 1 V 5 μA
BZX585-B/C3V9 VR = 1 V 3 μA
BZX585-B/C4V3 VR = 1 V 3 μA
BZX585-B/C4V7 VR = 2 V 3 μA
BZX585-B/C5V1 VR = 2 V 2 μA
BZX585-B/C5V6 VR = 2 V 1 μA
BZX585-B/C6V2 VR = 4 V 3 μA
BZX585-B/C6V8 VR = 4 V 2 μA
BZX585-B/C7V5 VR = 5 V 1 μA
BZX585-B/C8V2 VR = 5 V 700 nA
BZX585-B/C9V1 VR = 6 V 500 nA
BZX585-B/C10 VR = 7 V 200 nA
BZX585-B/C11 VR = 8 V 100 nA
BZX585-B/C12 VR = 8 V 100 nA
BZX585-B/C13 VR = 8 V 100 nA
BZX585-B/C15 to 75 VR = 0.7V
Znom
50 nA
2004 Jun 22 4