DATA SH EET
DISCRETE SEMICONDUCTORS
BZX384 series
Voltage regulator diodes
Product data sheet
Supersedes data of 2003 Apr 01
2004 Mar 22
NXP Semiconductors Product data sheet
Top view
Voltage regulator diodes BZX384 series
FEATURES
• Total power dissipation: max. 300 mW
• Two tolerance series: ±2% and approx. ±5%
• Working voltage range: nominal 2.4 to 75 V (E24 range)
• Non-repetitive peak reverse power dissipation:
40 W.
max.
APPLICATIONS
• General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes encapsulated in a
very small SOD323 (SC-76) plastic SMD package.
The diodes are available in the normalized E24 ±2%
(BZX384-B) and approx. ±5% (BZX384-C) tolerance
range. The series consists of 37
working voltages from 2.4
types with nominal
to 75 V.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
The marking bar indicates the cathode.
12
MAM387
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
2004 Mar 22 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
MARKING
TYPE
NUMBER
Marking codes for BZX384-B2V4 to BZX384-B75
BZX384-B2V4 K1 BZX384-B6V2 L2 BZX384-B16 M3 BZX384-B43 N3
BZX384-B2V7 K2 BZX384-B6V8 L3 BZX384-B18 M4 BZX384-B47 N4
BZX384-B3V0 K3 BZX384-B7V5 L4 BZX384-B20 M5 BZX384-B51 N5
BZX384-B3V3 K4 BZX384-B8V2 L5 BZX384-B22 M6 BZX384-B56 N6
BZX384-B3V6 K5 BZX384-B9V1 L6 BZX384-B24 M7 BZX384-B62 N7
BZX384-B3V9 K6 BZX384-B10 L7 BZX384-B27 M8 BZX384-B68 N8
BZX384-B4V3 K7 BZX384-B11 L8 BZX384-B30 M9 BZX384-B75 N9
BZX384-B4V7 K8 BZX384-B12 L9 BZX384-B33 N0
BZX384-B5V1 K9 BZX384-B13 M1 BZX384-B36 N1
BZX384-B5V6 L1 BZX384-B15 M2 BZX384-B39 N2
Marking codes for BZX384-C2V4 to BZX384-C75
BZX384-C2V4 T3 BZX384-C6V2 T1 BZX384-C16 DE BZX384-C43 DR
BZX384-C2V7 T4 BZX384-C6V8 D7 BZX384-C18 DF BZX384-C47 DS
BZX384-C3V0 T5 BZX384-C7V5 D8 BZX384-C20 DG BZX384-C51 DT
BZX384-C3V3 T6 BZX384-C8V2 D9 BZX384-C22 DH BZX384-C56 DU
BZX384-C3V6 T7 BZX384-C9V1 D0 BZX384-C24 DJ BZX384-C62 DV
BZX384-C3V9 T8 BZX384-C10 T2 BZX384-C27 DK BZX384-C68 DW
BZX384-C4V3 T9 BZX384-C11 DA BZX384-C30 DL BZX384-C75 DX
BZX384-C4V7 T0 BZX384-C12 DB BZX384-C33 DM
BZX384-C5V1 D5 BZX384-C13 DC BZX384-C36 DN
BZX384-C5V6 D6 BZX384-C15 DD BZX384-C39 DP
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
ORDERING INFORMATION
TYPE
NUMBER
BZX384-B2V4
to
BZX384-B75
BZX384-C2V4
to
BZX384-C75
2004 Mar 22 3
NAME DESCRIPTION VERSION
− plastic surface mounted pack ag e; 2 leads SOD323
PACKAGE
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
ZSM
P
tot
T
stg
T
j
Note
1. Refer to SOD323 standard mounting conditions .
CHARACTERISTICS
continuous forward current − 250 mA
non-repetitive peak reverse current tp = 100 μs; square wave;
T
= 25 °C; prior to surge
amb
non-repetitive peak reverse power
dissipation
total power dissipation T
tp = 100 μs; square wave;
= 25 °C; prior to surge
T
amb
= 25 °C; note 1 − 300 mW
amb
see Tables 1 and 2 A
− 40 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C
Total BZX384-B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF = 10 mA; see Fig.3 0.9 V
IF = 100 mA; see Fig.3 1.1 V
I
R
reverse current;
BZX384-B/C2V4 VR = 1 V 50 μA
BZX384-B/C2V7 VR = 1 V 20 μA
BZX384-B/C3V0 VR = 1 V 10 μA
BZX384-B/C3V3 VR = 1 V 5 μA
BZX384-B/C3V6 VR = 1 V 5 μA
BZX384-B/C3V9 VR = 1 V 3 μA
BZX384-B/C4V3 VR = 1 V 3 μA
BZX384-B/C4V7 VR = 2 V 3 μA
BZX384-B/C5V1 VR = 2 V 2 μA
BZX384-B/C5V6 VR = 2 V 1 μA
BZX384-B/C6V2 VR = 4 V 3 μA
BZX384-B/C6V8 VR = 4 V 2 μA
BZX384-B/C7V5 VR = 5 V 1 μA
BZX384-B/C8V2 VR = 5 V 700 nA
BZX384-B/C9V1 VR = 6 V 500 nA
BZX384-B/C10 VR = 7 V 200 nA
BZX384-B/C11 VR = 8 V 100 nA
BZX384-B/C12 VR = 8 V 100 nA
BZX384-B/C13 VR = 8 V 100 nA
BZX384-B/C15 to 75 VR = 0.7V
Znom
50 nA
2004 Mar 22 4
2004 Mar 22 5
Table 1 Per type BZX384-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
BZXBxxx
Cxxx
WORKING VOLTAGE VZ (V)
at I
Ztest
= 5 mA
Tol. ±2% (B) Tol. ±5% (C) at I
DIFFERENTIAL RESISTANCE
r
(Ω)
dif
= 1 mA at I
Ztest
Ztest
= 5 mA
TEMPERATURE
COEFFICIENT S
at I
Ztest
= 5 mA
(see Figs 4 and 5)
(mV/K)
Z
DIODE CAP.
(pF)
C
d
at f
= 1 MHz;
= 0 V
V
R
NON-REPETITIVE
PEAK REVERSE
CURRENT I
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
2V4 2.35 2.45 2.2 2.6 275 600 70 100 −3.5 −1.6 0 450 6.0
2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0
3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0
3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0
3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0
3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0
4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0
4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0
5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0
5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0
6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0
6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0
7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0
8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0
9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0
10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0
11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5
12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5
13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5
15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0
16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5
18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5
20 19.60 20.40 18.8 21.2 60 225 15 55 14.4 16.4 18.0 60 1.5
22 21.60 22.40 20.8 23.3 60 250 20 55 16.4 18.4 20.0 60 1.25
24 23.50 24.50 22.8 25.6 60 250 25 70 18.4 20.4 22.0 55 1.25
tp = 100 μs;
at
T
= 25 °C
amb
ZSM
(A)
2004 Mar 22 6
Table 2 Per type BZX384-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
BZXBxxx
Cxxx
WORKING VOLTAGE VZ (V)
at I
Ztest
= 2 mA
Tol. ±2% (B) Tol. ±5% (C) at I
DIFFERENTIAL RESISTANCE
r
(Ω)
dif
= 0.5 mA at I
Ztest
Ztest
= 2 mA
TEMPERATURE
COEFFICIENT S
at I
Ztest
= 2 mA
(see Figs 4 and 5)
(mV/K)
Z
DIODE CAP.
(pF)
C
d
at f
= 1 MHz;
= 0 V
V
R
NON-REPETITIVE
PEAK REVERSE
CURRENT I
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX.
27 26.50 27.50 25.1 28.9 65 300 25 80 21.4 23.4 25.3 50 1.0
30 29.40 30.60 28.0 32.0 70 300 30 80 24.4 26.6 29.4 50 1.0
33 32.30 33.70 31.0 35.0 75 325 35 80 27.4 29.7 33.4 45 0.9
36 35.30 36.70 34.0 38.0 80 350 35 90 30.4 33.0 37.4 45 0.8
39 38.20 39.80 37.0 41.0 80 350 40 130 33.4 36.4 41.2 45 0.7
43 42.10 43.90 40.0 46.0 85 375 45 150 37.6 41.2 46.6 40 0.6
47 46.10 47.90 44.0 50.0 85 375 50 170 42.0 46.1 51.8 40 0.5
51 50.00 52.00 48.0 54.0 90 400 60 180 46.6 51.0 57.2 40 0.4
56 54.90 57.10 52.0 60.0 100 425 70 200 52.2 57.0 63.8 40 0.3
62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3
68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25
75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2
tp = 100 μs;
at
T
= 25 °C
amb
ZSM
(A)
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-s)
Notes
1. Device mounted on an FR4 printed-circuit board.
2. Soldering point of the cathode tab.
thermal resistance from junction
to ambient
thermal resistance from junction
to soldering point
note 1 415 K/W
note 2 110 K/W
2004 Mar 22 7
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
GRAPHICAL DATA
3
10
handbook, halfpage
P
ZSM
(W)
2
10
10
1
−1
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
(1)
(2)
1 duration (ms)
MBG801
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
300
handbook, halfpage
I
F
(mA)
200
100
0
10
0.6 1
Tj = 25 °C.
0.8
MBG781
VF (V)
Fig.3 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
S
Z
(mV/K)
−1
−2
−3
060
BZX384-B/C2V4 to B/C4V3.
T
= 25 to 150 °C.
j
4V3
20 40
MBG783
3V9
3V6
3V3
3V0
2V4
2V7
IZ (mA)
Fig.4 Temperature coefficient as a function of
working current; typical values.
10
handbook, halfpage
S
Z
(mV/K)
5
0
−5
02016
BZX384-B/C4V7 to B/C12.
T
= 25 to 150 °C.
j
4812
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4V7
Fig.5 Temperature coefficient as a function of
working current; typical values.
MBG782
IZ (mA)
2004 Mar 22 8
NXP Semiconductors Product data sheet
3
P
Voltage regulator diodes BZX384 series
PACKAGE OUTLINE
lastic surface-mounted package; 2 leads
D
A
E
X
M
H
D
vA
SOD32
Q
21
(1)
01
DIMENSIONS (mm are the original dimensions)
A
1
b
UNIT
A
max
1.1
mm 0.05
0.8
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323 SC-76
c D E H
p
0.40
0.25
1.8
0.25
0.10
IEC JEDEC JEITA
1.6
1.35
1.15
D
2.7
2.3
REFERENCES
L
0.45
0.15
b
p
scale
Q
0.25
0.15
v
0.2
p
A
A
2 mm
1
L
detail X
EUROPEAN
PROJECTION
p
c
ISSUE DATE
03-12-17
06-03-16
2004 Mar 22 9
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX384 series
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or co mpleting a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Mar 22 10
60134) may cause permanent damage to
NXP Semiconductors
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definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands R76/02/pp11 Date of release: 2004 Mar 22 Document order number: 9397 750 12616
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