DATA SH EET
ook, halfpage
M3D154
DISCRETE SEMICONDUCTORS
BZX284 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1999 Apr 19
2002 May 28
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
FEATURES
• Total power dissipation:
400 mW
max.
• Two tolerance series:
±2%
and ±5%
DESCRIPTION
Low-power voltage regulator diodes in a SOD110 very small ceramic SMD
package. The diodes are available in th e normalized E24 ±2% (BZX284-B) and
±5% (BZX284-C) tolerance range. The series cons ists of 37 types with nominal
working voltages from 2.4
to 75 V.
• Working voltage range:
2.4 to 75 V (E24 range).
nom.
handbook, 4 columns
ak
cathode mark
ka
APPLICATIONS
• General regulation functions.
top viewside viewbottom view
MAM219
Fig.1 Simplified outline (SOD110) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZX284-B2V4 WO BZX284-B15 XH BZX284-C2V4 YO BZX284-C15 ZH
BZX284-B2V7 WP BZX284-B16 XI BZX284-C2V7 YP BZX284-C16 ZI
BZX284-B3V0 WQ BZX284-B18 XJ BZX284-C3V0 YQ BZX284-C18 ZJ
BZX284-B3V3 WR BZX284-B20 XK BZX284-C3V3 YR BZX284-C20 ZK
BZX284-B3V6 WS BZX284-B22 XL BZX284-C3V6 YS BZX284-C22 ZL
BZX284-B3V9 WT BZX284-B24 XM BZX284-C3V9 YT BZX284-C24 ZM
BZX284-B4V3 WU BZX284-B27 XN BZX284-C4V3 YU BZX284-C27 ZN
BZX284-B4V7 WV BZX284-B30 XO BZX284-C4V7 YV BZX284-C30 ZO
BZX284-B5V1 WW BZX284-B33 XP BZX284-C5V1 YW BZX284-C33 ZP
BZX284-B5V6 WX BZX284-B36 XQ BZX284-C5V6 YX BZX284-C36 ZQ
BZX284-B6V2 WY BZX284-B39 XR BZX284-C6V2 YY BZX284-C39 ZR
BZX284-B6V8 WZ BZX284-B43 XS BZX284-C6V8 YZ BZX284-C43 ZS
BZX284-B7V5 XA BZX284-B47 XT BZX284-C7V5 ZA BZX284-C47 ZT
BZX284-B8V2 XB BZX284-B51 XU BZX284-C8V2 ZB BZX284-C51 ZU
BZX284-B9V1 XC BZX284-B56 XV BZX284-C9V1 ZC BZX284-C56 ZV
BZX284-B10 XD BZX284-B62 XW BZX284-C10 ZD BZX284-C62 ZW
BZX284-B11 XE BZX284-B68 XX BZX284-C11 ZE BZX284-C68 ZX
BZX284-B12 XF BZX284-B75 XY BZX284-C12 ZF BZX284-C75 ZY
BZX284-B13 XG − − BZX284-C13 ZG − −
2002 May 28 2
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating Sys tem (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
F
I
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
ELECTRICAL CHARACTERISTICS
Total BZX284-B and BZX284-C series
Tj = 25 °C unless otherwise specified.
continuous forward current − 250 mA
non-repetitive peak reverse current tp = 100 μs; square wave;
T
= 25 °C prior to surge
amb
total power dissipation T
= 25 °C; note 1 − 400 mW
amb
see Tables 1 and 2
storage temperature −65 +150 °C
junction temperature − 150 °C
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage IF = 10 mA; see Fig.2 0.9 V
IF = 100 mA; see Fig.2 1.1 V
I
R
reverse current
BZX284-B/C2V4 VR = 1 V 50 μA
BZX284-B/C2V7 VR = 1 V 20 μA
BZX284-B/C3V0 VR = 1 V 10 μA
BZX284-B/C3V3 VR = 1 V 5 μA
BZX284-B/C3V6 VR = 1 V 5 μA
BZX284-B/C3V9 VR = 1 V 3 μA
BZX284-B/C4V3 VR = 1 V 3 μA
BZX284-B/C4V7 VR = 2 V 3 μA
BZX284-B/C5V1 VR = 2 V 2 μA
BZX284-B/C5V6 VR = 2 V 1 μA
BZX284-B/C6V2 VR = 4 V 3 μA
BZX284-B/C6V8 VR = 4 V 2 μA
BZX284-B/C7V5 VR = 5 V 1 μA
BZX284-B/C8V2 VR = 5 V 700 nA
BZX284-B/C9V1 VR = 6 V 500 nA
BZX284-B/C10 VR = 7 V 200 nA
BZX284-B/C11 VR = 8 V 100 nA
BZX284-B/C12 VR = 8 V 100 nA
BZX284-B/C13 VR = 8 V 100 nA
BZX284-B/C15 to 75 VR = 0.7V
Znom
50 nA
2002 May 28 3
2002 May 28 4
Table 1 Per type BZX284-B/C2V4 to B/C24
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
BZX284-
Bxxx
Cxxx
WORKING VOLTAGE
V
(V)
Z
at I
Ztest
= 5 mA
Tol. ±2% (B) Tol. ±5% (C) at I
DIFFERENTIAL RESISTANCE
r
(Ω)
dif
= 1 mA at I
Ztest
Ztest
= 5 mA
TEMP. COEFF.
S
(mV/K)
Z
I
Ztest
= 5 mA
at
(see Figs 3 and 4)
DIODE CAP.
C
(pF)
d
= 1 MHz;
at f
= 0 V
V
R
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
2V4 2.35 2.45 2.2 2.6 275 400 70 100 −1.6 450 12.0
2V7 2.65 2.75 2.5 2.9 300 450 75 100 −2.0 440 12.0
3V0 2.94 3.06 2.8 3.2 325 500 80 95 −2.1 425 12.0
3V3 3.23 3.37 3.1 3.5 350 500 85 95 −2.4 410 12.0
3V6 3.53 3.67 3.4 3.8 375 500 85 90 −2.4 390 12.0
3V9 3.82 3.98 3.7 4.1 400 500 85 90 −2.5 370 12.0
4V3 4.21 4.39 4.0 4.6 410 600 80 90 −2.5 350 12.0
4V7 4.61 4.79 4.4 5.0 425 500 50 80 −1.4 325 12.0
5V1 5.00 5.20 4.8 5.4 400 480 40 60 −0.8 300 12.0
5V6 5.49 5.71 5.2 6.0 80 400 15 40 1.2 275 12.0
6V2 6.08 6.32 5.8 6.6 40 150 6 10 2.3 250 12.0
6V8 6.66 6.94 6.4 7.2 30 80 6 15 3.0 215 12.0
7V5 7.35 7.65 7.0 7.9 15 80 2 10 4.0 170 4.0
8V2 8.04 8.36 7.7 8.7 20 80 2 10 4.6 150 4.0
9V1 8.92 9.28 8.5 9.6 20 100 2 10 5.5 120 3.0
10 9.80 10.20 9.4 10.6 20 150 2 10 6.4 110 3.0
11 10.80 11.20 10.4 11.6 25 150 2 10 7.4 108 2.5
12 11.80 12.20 11.4 12.7 25 150 2 10 8.4 105 2.5
13 12.70 13.30 12.4 14.1 25 170 2 10 9.4 103 2.5
15 14.70 15.30 13.8 15.6 25 200 3 15 11.4 99 2.0
16 15.70 16.30 15.3 17.1 25 200 4 20 12.4 97 1.5
18 17.60 18.40 16.8 19.1 25 225 4 20 14.4 93 1.5
20 19.60 20.40 18.8 21.2 30 225 4 20 16.4 88 1.5
22 21.60 22.40 20.8 23.3 30 250 5 25 18.4 84 1.25
24 23.50 24.50 22.8 25.6 30 250 6 30 20.4 80 1.25
(A) at tp = 100 μs;
= 25 °C
T
amb
2002 May 28 5
Table 2 Per type BZX284-B/C27 to B/C75
Tj = 25 °C unless otherwise specified.
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
BZX284-
Bxxx
Cxxx
WORKING VOLTAGE
V
(V)
Z
at I
Ztest
= 2 mA
Tol. ±2% (B) Tol. ±5% (C) at I
DIFFERENTIAL RESISTANCE
r
(Ω)
dif
= 0.5 mA at I
Ztest
Ztest
= 2 mA
TE MP. COEFF.
S
(mV/K)
Z
I
Ztest
= 2 mA
at
DIODE CAP.
C
(pF)
d
= 1 MHz;
at f
= 0 V
V
R
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.
27 26.50 27.50 25.1 28.9 35 250 8 40 23.4 73 1.0
30 29.40 30.60 28.0 32.0 35 250 10 40 26.6 66 1.0
33 32.30 33.70 31.0 35.0 40 275 11 40 29.7 60 0.9
36 35.30 36.70 34.0 38.0 40 300 15 60 33.0 59 0.8
39 38.20 39.80 37.0 41.0 40 300 25 75 36.4 58 0.7
43 42.10 43.90 40.0 46.0 45 325 30 80 41.2 56 0.6
47 46.10 47.90 44.0 50.0 45 325 30 90 46.1 55 0.5
51 50.00 52.00 48.0 54.0 45 350 35 110 51.0 52 0.4
56 54.90 57.10 52.0 60.0 50 375 40 120 57.0 49 0.3
62 60.80 63.20 58.0 66.0 60 400 50 140 64.4 44 0.3
68 66.60 69.40 64.0 72.0 75 400 55 160 71.7 40 0.25
75 73.50 76.50 70.0 79.0 85 400 70 175 80.2 35 0.2
(A) at tp = 100 μs;
= 25 °C
T
amb
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Device mounted on a printed-circuit board: 11 × 25 × 1.6 mm.
GRAPHICAL DATA
thermal resistance from junction to ambient note 1 315 K/W
300
handbook, halfpage
I
F
(mA)
200
100
0
0.6 1
Tj = 25 °C.
0.8
MBG781
VF (V)
Fig.2 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
S
Z
(mV/K)
−1
−2
−3
060
BZX284-B/C2V4 to B/C4V3.
= 25 to 150 °C.
T
j
4V3
20 40
MBG783
3V9
3V6
3V3
3V0
2V4
2V7
IZ (mA)
Fig.3 Temperature coefficient as a function of
working current; typical values.
2002 May 28 6
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
10
handbook, halfpage
S
Z
(mV/K)
5
0
−5
02016
BZX284-B/C4V7 to B/C12.
Tj = 25 to 150 °C.
12
11
10
9V1
8V2
7V5
6V8
4812
6V2
5V6
5V1
4V7
MBG782
IZ (mA)
Fig.4 Temperature coefficient as a function of
working current; typical values.
2002 May 28 7
NXP Semiconductors Product data sheet
Very small ceramic rectangular surface mounted package SOD110
Voltage regulator diodes BZX284 series
PACKAGE OUTLINE
cathode
identifier
OUTLINE
VERSION
SOD110
D
A
21
0 0.5 1 mm
scale
REFERENCES
IEC JEDEC EIAJ
E
y
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
max.
1.6
EUROPEAN
PROJECTION
2.10
1.90
D
E
1.40
1.10
ISSUE DATE
0.1
97-04-14
y
2002 May 28 8
NXP Semiconductors Product data sheet
Voltage regulator diodes BZX284 series
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or comple ting a design.
2. The product status of device(s) desc ribed in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
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(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2002 May 28 9
60134) may cause permanent damage to
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands 613514/04/pp10 Date of release: 2002 May 28 Document order number: 9397 750 09734
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