NXP BZV 55-C15 NXP Datasheet

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006aaa152

BZV55 series

Voltage regulator diodes

Rev. 5 — 26 January 2011 Product data sheet

1. Product profile

1.1 General description

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.

1.2 Features and benefits

 Non-repetitive peak reverse power

dissipation:  40 W

 Total power dissipation:  500 mW  Low differential resistance  Two tolerance series: 2%and5%  Small hermetically sealed glass

 Wide working voltage range:

nominal 2.4 V to 75 V (E24 range)

SMD package

1.3 Applications

 General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

ZSM

[1] tp=100s; square wave; Tj=25C prior to surge

forward voltage IF=10mA - - 0.9 V non-repetitive peak

reverse power dissipation

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode 2 anode

[1] The marking band indicates the cathode.

[1]

--40W

[1]

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BZV55-B2V4 to BZV55-C75

[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

[1]

4. Marking

Table 4. Marking codes

Type number Marking code

BZV55-B2V4 to BZV55-C75 marking band

5. Limiting values

BZV55 series

Voltage regulator diodes

Name Description Version

- hermetically sealed glass surface-mounted package; 2 connectors

SOD80C

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

ZSM

forward current - 250 mA non-repetitive peak

reverse current

ZSM

non-repetitive peak reverse power dissipation

tot

stg

[1] tp=100s; square wave; Tj=25C prior to surge [2] Device mounted on a ceramic substrate of 10  10  0.6 mm.

total power dissipation T

storage temperature 65 +200 C junction temperature 65 +200 C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-sp)

thermal resistance from junction to ambient

thermal resistance from junction to solder point

 50 C

amb

 50 C

in free air

[1]

-see

Table 8

and 9

[1]

-40W

[2]

-400mW

[2]

-500mW

[1]

- - 380 K/W

- - 300 K/W

[1] Device mounted on a ceramic substrate of 10  10  0.6 mm.

Product data sheet Rev. 5 — 26 January 2011 2 of 13

NXP Semiconductors

006aab072

tp (ms)

−1

110

th(j-a)

(K/W)

δ = 1

0.75

0.33

0.05

0.02

0.01

0.50

0.20

0.10

≤ 0.001

BZV55 series

Voltage regulator diodes

Fig 1. Transi en t the rmal impe da n ce from ju nc tio n to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics

=25C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Product data sheet Rev. 5 — 26 January 2011 3 of 13

forward voltage IF=10mA --0.9V reverse current

BZV55-B/C2V4 V BZV55-B/C2V7 V BZV55-B/C3V0 V BZV55-B/C3V3 V BZV55-B/C3V6 V BZV55-B/C3V9 V BZV55-B/C4V3 V BZV55-B/C4V7 V BZV55-B/C5V1 V BZV55-B/C5V6 V BZV55-B/C6V2 V BZV55-B/C6V8 V BZV55-B/C7V5 V BZV55-B/C8V2 V BZV55-B/C9V1 V BZV55-B/C10 V BZV55-B/C11 V BZV55-B/C12 V BZV55-B/C13 V BZV55-B/C15 to BZV55-B/C75 V

=1V --50A

=1V --20A

=1V --10A

=1V --5A

=1V --3A

=2V --3A

=2V --2A

=2V --1A

=4V --3A

=4V --2A

=5V --1A

=5V --700nA

=6V --500nA

=7V --200nA

=8V --100nA

=0.7V

Z(nom)

--50nA

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24

Tj=25C unless otherwise specified.

BZV55xxx

Sel Working

voltage

(V)

IZ=5mA IZ=1mA IZ=5mA IZ=5mA

Differential resistance r

()

dif

T emperature coefficient

(mV/K)

Diode capacitance

[1]

(pF)

Non-repetitive peak reverse current I

Min Max Typ Max Typ Max Min Typ Max Max Max

2V4 B 2.35 2.45 275 600 70 100 3.5 1.6 0 450 6.0

C2.22.6

2V7 B 2.65 2.75 300 600 75 100 3.5 2.0 0 450 6.0

C2.52.9

3V0 B 2.94 3.06 325 600 80 95 3.5 2.1 0 450 6.0

C2.83.2

3V3 B 3.23 3.37 350 600 85 95 3.5 2.4 0 450 6.0

C3.13.5

3V6 B 3.53 3.67 375 600 85 90 3.5 2.4 0 450 6.0

C3.43.8

3V9 B 3.82 3.98 400 600 85 90 3.5 2.5 0 450 6.0

C3.74.1

4V3 B 4.21 4.39 410 600 80 90 3.5 2.5 0 450 6.0

C4.04.6

4V7 B 4.61 4.79 425 500 50 80 3.5 1.4 0.2 300 6.0

C4.45.0

5V1 B 5.0 5.2 400 480 40 60 2.7 0.8 1.2 300 6.0

C4.85.4

5V6 B 5.49 5.71 80 400 15 40 2.0 1.2 2.5 300 6.0

C5.26.0

6V2 B 6.08 6.32 40 150 6 10 0.4 2.3 3.7 200 6.0

C5.86.6

6V8 B 6.66 6.94 30 80 6 15 1.2 3.0 4.5 200 6.0

C6.47.2

7V5 B 7.35 7.65 30 80 6 15 2.5 4.0 5.3 150 4.0

C7.07.9

8V2 B 8.04 8.36 40 80 6 15 3.2 4.6 6.2 150 4.0

C7.78.7

9V1 B 8.92 9.28 40 100 6 15 3.8 5.5 7.0 150 3.0

C8.59.6

10 B 9.8 10.2 50 150 8 20 4.5 6.4 8.0 90 3.0

C 9.4 10.6

11 B 10.8 11.2 50 150 10 20 5.4 7.4 9.0 85 2.5

C10.411.6

12 B 11.8 12.2 50 150 10 25 6.0 8.4 10.0 85 2.5

C 11.4 12.7

ZSM

(A)

[2]

Product data sheet Rev. 5 — 26 January 2011 4 of 13

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24

…continued

Tj=25C unless otherwise specified.

BZV55xxx

Sel Working

voltage VZ(V)

IZ=5mA IZ=1mA IZ=5mA IZ=5mA

Differential resistance r

()

dif

T emperature coefficient SZ(mV/K)

Diode capacitance Cd(pF)

[1]

Non-repetitive peak reverse current I

ZSM

Min Max Typ Max Typ Max Min Typ Max Max Max

13 B 12.7 13.3 50 170 10 30 7.0 9.4 11.0 80 2.5

C 12.4 14.1

15 B 14.7 15.3 50 200 10 30 9.2 11.4 13.0 75 2.0

C 13.8 15.6

16 B 15.7 16.3 50 200 10 40 10.4 12.4 14.0 75 1.5

C 15.3 17.1

18 B 17.6 18.4 50 225 10 45 12.4 14.4 16.0 70 1.5

C 16.8 19.1

20 B 19.6 20.4 60 225 15 55 12.3 15.6 18.0 60 1.5

C 18.8 21.2

22 B 21.6 22.4 60 250 20 55 14.1 17.6 20.0 60 1.25

C 20.8 23.3

24 B 23.5 24.5 60 250 25 70 15.9 19.6 22.0 55 1.25

C 22.8 25.6

(A)

[2]

[1] f = 1 MHz; VR=0V [2] t

= 100 s; square wave; Tj=25C p rior to surge

Product data sheet Rev. 5 — 26 January 2011 5 of 13

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 9. Characteristics per type; BZV55-B27 to BZV55-C75

Tj=25C unless otherwise specified.

BZV55xxx

Sel Working

voltage

(V)

IZ=2mA IZ=0.5mA IZ=2mA IZ=2mA

Differential resistance r

()

dif

T emperature coefficient

(mV/K)

Diode capacitance

[1]

(pF)

Non-repetitive peak reverse current I

ZSM

Min Max Typ Max Typ Max Min Typ Max Max Max

27 B 26.5 27.5 65 300 25 80 18.0 22.7 25.3 50 1.0

C 25.1 28.9

30 B 29.4 30.6 70 300 30 80 20.6 25.7 29.4 50 1.0

C 28.0 32.0

33 B 32.3 33.7 75 325 35 80 23.3 28.7 33.4 45 0.9

C 31.0 35.0

36 B 35.3 36.7 80 350 35 90 26.0 31.8 37.4 45 0.8

C 34.0 38.0

39 B 38.2 39.8 80 350 40 130 28.7 34.8 41.2 45 0.7

C 37.0 41.0

43 B 42.1 43.9 85 375 45 150 31.4 38.8 46.6 40 0.6

C 40.0 46.0

47 B 46.1 47.9 85 375 50 170 35.0 42.9 51.8 40 0.5

C 44.0 50.0

51 B 50.0 52.0 90 400 60 180 38.6 46.9 57.2 40 0.4

C 48.0 54.0

56 B 54.9 57.1 100 425 70 200 42.2 52.0 63.8 40 0.3

C 52.0 60.0

62 B 60.8 63.2 120 450 80 215 58.8 64.4 71.6 35 0.3

C 58.0 66.0

68 B 66.6 69.4 150 475 90 240 65.6 71.7 79.8 35 0.25

C 64.0 72.0

75 B 73.5 76.5 170 500 95 255 73.4 80.2 88.6 35 0.2

C 70.0 79.0

(A)

[2]

[1] f = 1 MHz; VR=0V

= 100 s; square wave; Tj=25C p rior to surge

[2] t

Product data sheet Rev. 5 — 26 January 2011 6 of 13

NXP Semiconductors

mbg801

tp (ms)

ZSM

(W)

−1

(1)

(2)

VF (V)

0.6 10.8

mbg781

100

200

300

(mA)

060

−2

−3

−1

mbg783

20 40

(mA)

(mV/K)

4V3

3V9

3V6

3V0

2V4 2V7

3V3

02016

−5

mbg782

4812

(mA)

(mV/K)

4V7

12 11

10 9V1 8V2

7V5 6V8

6V2 5V6 5V1

BZV55 series

Voltage regulator diodes

(1) Tj=25C (prior to surge)

= 150 C (prior to surge)

(2) T

Fig 2. Non-repetitive peak reverse power dissipation

as a function of pulse duration; maximum values

BZV55-B/C2V4 to BZV55-B/C4V3 T

=25C to 150 C

Fig 4. Temperature coefficient as a function of

Product data sheet Rev. 5 — 26 January 2011 7 of 13

working current; typical values

=25C

Fig 3. Forward current as a function of forward

voltage; typical values

BZV55-B/C4V7 to BZV55-B/C12 Tj=25C to 150 C

Fig 5. Temperature coefficient as a function of

working current; typical values

NXP Semiconductors

06-03-16Dimensions in mm

1.60

1.45

0.3

3.7

3.3

0.3

8. Package outline

Fig 6. Package outline SOD80C

BZV55 series

Voltage regulator diodes

9. Packing information

Table 10. Packin g methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BZV55-B2V4 to BZV55-C75

[1] For further information and the availability of packing methods, see Section 13.

[1]

2500 10000

SOD80C 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 5 — 26 January 2011 8 of 13

NXP Semiconductors

sod080c

2.30

4.30

4.55

1.601.702.25

0.90 (2x)

solder lands

solder resist occupied area

solder paste

Dimensions in mm

sod080c

2.70

4.90

6.30

1.702.90

1.90

solder lands

tracks

solder resist occupied area

Dimensions in mm

10. Soldering

Fig 7. Reflow soldering footprint SOD80C

BZV55 series

Voltage regulator diodes

Fig 8. Wave soldering footprint SOD80C

Product data sheet Rev. 5 — 26 January 2011 9 of 13

NXP Semiconductors

BZV55 series

Voltage regulator diodes

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BZV55_SER v.5 20110126 Product data sheet - BZV55_SER v.4 Modifications:

BZV55_SER v.4 20070719 Product data sheet CPCN200508022F BZV55 v.3 BZV55 v.3 20020228 Product specification - BZV55 v.2 BZV55 v.2 19990521 Product specification - BZV55 v.1 BZV55 v.1 19960426 Product specification - -

• Section 4 “Marking”: updated

• Table 6 “Thermal characteristics”: changed R

th(j-t)

for R

• Figure 6: superseded by minimized outline drawing

• Section 12 “Legal information”: updated

th(j-sp)

Product data sheet Rev. 5 — 26 January 2011 10 of 13

NXP Semiconductors

BZV55 series

Voltage regulator diodes

12. Legal information

12.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this docu ment may have change d since this d ocument was p ublished and may dif fe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is open for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, unless otherwise

Product data sheet Rev. 5 — 26 January 2011 11 of 13

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neit her qua lif ied nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, custome r (a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct claims result ing from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

12.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheet Rev. 5 — 26 January 2011 12 of 13

NXP Semiconductors

14. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information . . . . . . . . . . . . . . . . . . . . . 8

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Contact information. . . . . . . . . . . . . . . . . . . . . 12

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BZV55 series

Voltage regulator diodes

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 26 January 2011

Document identifier: BZV55_SER

NXP BZV 55-C15 NXP Datasheet

Specifications and Main Features

Frequently Asked Questions

User Manual

1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Package outline

9. Packing information

10. Soldering

11. Revision history

12. Legal information

12.1 Data sheet status

12.2 Definitions

12.3 Disclaimers

12.4 Trademarks

13. Contact information

14. Contents