NXP BZV55 Technical data

BZV55 series

Voltage regulator diodes

Rev. 04 — 19 July 2007 Product data sheet

1. Product profile

1.1 General description

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from 2.4 V to 75 V.

1.2 Features

n Non-repetitive peak reverse power

dissipation: ≤ 40 W

n Total power dissipation: ≤ 500 mW n Low differential resistance
n Two tolerance series: ±2 % and ±5% n Small hermetically sealed glass SMD

1.3 Applications

n General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

F

P

ZSM

[1] tp= 100µs; square wave; Tj=25°C prior to surge

forward voltage IF= 10 mA - - 0.9 V
non-repetitive peak reverse

power dissipation

2. Pinning information

Table 2. Pinning

Pin Description Simplified outline Symbol

1 cathode
2 anode

n Wide working voltage range: nominal

2.4 V to 75 V (E24 range)

package

[1]

--40W

[1]

ka

1

006aaa152

2

[1] The marking band indicates the cathode.

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BZV55-B2V4 to
BZV55-C75

[1] The series consists of 74 types with nominal working voltages from 2.4V to 75 V.

[1]

4. Marking

Table 4. Marking codes

Type number Marking code

BZV55-B2V4 to BZV55-C75 marking band

[1] blue: made in China

yellow: made in Philippines

BZV55 series

Voltage regulator diodes

Name Description Version

- hermetically sealed glass surface-mounted
package; 2 connectors

[1]

SOD80C

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

I

F

I

ZSM

forward current - 250 mA
non-repetitive peak reverse

current

P

ZSM

non-repetitive peak reverse
power dissipation

P

tot

T

stg

T

j

[1] tp= 100 µs; square wave; Tj=25°C prior to surge
[2] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

total power dissipation T

storage temperature −65 +200 °C
junction temperature −65 +200 °C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

R

th(j-a)

th(j-t)

thermal resistance from
junction to ambient

thermal resistance from
junction to tie-point

≤ 50 °C

amb

≤ 50 °C

T

tp

in free air

[1]

- see

Table 8

and

9

[1]

-40W

[2]

- 400 mW

[2]

- 500 mW

[1]

- - 380 K/W

- - 300 K/W

[1] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

BZV55_SER_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 19 July 2007 2 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

tp (ms)

006aab072

10

Z

th(j-a)

(K/W)

3

10

δ = 1

0.75

0.50

0.33

2

10

0.20

0.10

0.05

0.02

0.01

10

≤ 0.001

1

−1

10

110

2

10

3

10

4

10

Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

F

I

R

forward voltage IF= 10 mA - - 0.9 V
reverse current

BZV55-B/C2V4 V
BZV55-B/C2V7 V
BZV55-B/C3V0 V
BZV55-B/C3V3 V
BZV55-B/C3V6 V
BZV55-B/C3V9 V
BZV55-B/C4V3 V
BZV55-B/C4V7 V
BZV55-B/C5V1 V
BZV55-B/C5V6 V
BZV55-B/C6V2 V
BZV55-B/C6V8 V
BZV55-B/C7V5 V
BZV55-B/C8V2 V
BZV55-B/C9V1 V
BZV55-B/C10 V
BZV55-B/C11 V
BZV55-B/C12 V
BZV55-B/C13 V
BZV55-B/C15 to BZV55-B/C75 V

=1V --50µA

R

=1V --20µA

R

=1V --10µA

R

=1V --5µA

R

=1V --5µA

R

=1V --3µA

R

=1V --3µA

R

=2V --3µA

R

=2V --2µA

R

=2V --1µA

R

=4V --3µA

R

=4V --2µA

R

=5V --1µA

R

= 5 V - - 700 nA

R

= 6 V - - 500 nA

R

= 7 V - - 200 nA

R

= 8 V - - 100 nA

R

= 8 V - - 100 nA

R

= 8 V - - 100 nA

R

= 0.7V

R

Z(nom)

--50nA

5

BZV55_SER_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 19 July 2007 3 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24

Tj=25°C unless otherwise specified.

BZV55-xxxSel Working

voltage

(V)

V

Z

IZ=5mA IZ=1mA IZ=5mA IZ=5mA
Min Max Typ Max Typ Max Min Typ Max Max Max

2V4 B 2.35 2.45 275 600 70 100 −3.5 −1.6 0 450 6.0

C 2.2 2.6

2V7 B 2.65 2.75 300 600 75 100 −3.5 −2.0 0 450 6.0

C 2.5 2.9

3V0 B 2.94 3.06 325 600 80 95 −3.5 −2.1 0 450 6.0

C 2.8 3.2

3V3 B 3.23 3.37 350 600 85 95 −3.5 −2.4 0 450 6.0

C 3.1 3.5

3V6 B 3.53 3.67 375 600 85 90 −3.5 −2.4 0 450 6.0

C 3.4 3.8

3V9 B 3.82 3.98 400 600 85 90 −3.5 −2.5 0 450 6.0

C 3.7 4.1

4V3 B 4.21 4.39 410 600 80 90 −3.5 −2.5 0 450 6.0

C 4.0 4.6

4V7 B 4.61 4.79 425 500 50 80 −3.5 −1.4 0.2 300 6.0

C 4.4 5.0

5V1 B 5.0 5.2 400 480 40 60 −2.7 −0.8 1.2 300 6.0

C 4.8 5.4

5V6 B 5.49 5.71 80 400 15 40 −2.0 1.2 2.5 300 6.0

C 5.2 6.0

6V2 B 6.08 6.32 40 150 6 10 0.4 2.3 3.7 200 6.0

C 5.8 6.6

6V8 B 6.66 6.94 30 80 6 15 1.2 3.0 4.5 200 6.0

C 6.4 7.2

7V5 B 7.35 7.65 30 80 6 15 2.5 4.0 5.3 150 4.0

C 7.0 7.9

8V2 B 8.04 8.36 40 80 6 15 3.2 4.6 6.2 150 4.0

C 7.7 8.7

9V1 B 8.92 9.28 40 100 6 15 3.8 5.5 7.0 150 3.0

C 8.5 9.6

10 B 9.8 10.2 50 150 8 20 4.5 6.4 8.0 90 3.0

C 9.4 10.6

11 B 10.8 11.2 50 150 10 20 5.4 7.4 9.0 85 2.5

C 10.4 11.6

12 B 11.8 12.2 50 150 10 25 6.0 8.4 10.0 85 2.5

C 11.4 12.7

BZV55_SER_4 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 04 — 19 July 2007 4 of 12

Differential resistance

(Ω)

r

dif

Temperature
coefficient

(mV/K)

S

Z

Diode
capacitance

[1]

(pF)

C

d

Non-repetitive
peak reverse
current

ZSM

(A)

[2]

I