NXP BZV55 Technical data

BZV55 series

Voltage regulator diodes

Rev. 04 — 19 July 2007 Product data sheet

1. Product proﬁle

1.1 General description

Low-power voltage regulator diodes in small hermetically sealed glass SOD80C Surface-Mounted Device (SMD) packages. The diodes are available in the normalized E24 ±2 % (BZV55-B) and approximately ±5 % (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.

1.2 Features

n Non-repetitive peak reverse power

dissipation: ≤ 40 W

n Total power dissipation: ≤ 500 mW n Low differential resistance n Two tolerance series: ±2 % and ±5% n Small hermetically sealed glass SMD

1.3 Applications

n General regulation functions

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

ZSM

[1] tp= 100µs; square wave; Tj=25°C prior to surge

forward voltage IF= 10 mA - - 0.9 V non-repetitive peak reverse

power dissipation

2. Pinning information

Table 2. Pinning

Pin Description Simpliﬁed outline Symbol

1 cathode 2 anode

n Wide working voltage range: nominal

2.4 V to 75 V (E24 range)

package

[1]

--40W

[1]

006aaa152

[1] The marking band indicates the cathode.

NXP Semiconductors

3. Ordering information

Table 3. Ordering information

Type number Package

BZV55-B2V4 to BZV55-C75

[1] The series consists of 74 types with nominal working voltages from 2.4V to 75 V.

[1]

4. Marking

Table 4. Marking codes

Type number Marking code

BZV55-B2V4 to BZV55-C75 marking band

[1] blue: made in China

yellow: made in Philippines

BZV55 series

Voltage regulator diodes

Name Description Version

- hermetically sealed glass surface-mounted package; 2 connectors

[1]

SOD80C

5. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

ZSM

forward current - 250 mA non-repetitive peak reverse

current

ZSM

non-repetitive peak reverse power dissipation

tot

stg

[1] tp= 100 µs; square wave; Tj=25°C prior to surge [2] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

total power dissipation T

storage temperature −65 +200 °C junction temperature −65 +200 °C

6. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

th(j-t)

thermal resistance from junction to ambient

thermal resistance from junction to tie-point

≤ 50 °C

amb

≤ 50 °C

in free air

[1]

- see

Table 8

and

[1]

-40W

[2]

- 400 mW

[2]

- 500 mW

[1]

- - 380 K/W

- - 300 K/W

[1] Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm.

Product data sheet Rev. 04 — 19 July 2007 2 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

tp (ms)

006aab072

th(j-a)

(K/W)

δ = 1

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01

≤ 0.001

−1

110

Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. Characteristics

Table 7. Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

forward voltage IF= 10 mA - - 0.9 V reverse current

BZV55-B/C2V4 V BZV55-B/C2V7 V BZV55-B/C3V0 V BZV55-B/C3V3 V BZV55-B/C3V6 V BZV55-B/C3V9 V BZV55-B/C4V3 V BZV55-B/C4V7 V BZV55-B/C5V1 V BZV55-B/C5V6 V BZV55-B/C6V2 V BZV55-B/C6V8 V BZV55-B/C7V5 V BZV55-B/C8V2 V BZV55-B/C9V1 V BZV55-B/C10 V BZV55-B/C11 V BZV55-B/C12 V BZV55-B/C13 V BZV55-B/C15 to BZV55-B/C75 V

=1V --50µA

=1V --20µA

=1V --10µA

=1V --5µA

=1V --3µA

=2V --3µA

=2V --2µA

=2V --1µA

=4V --3µA

=4V --2µA

=5V --1µA

= 5 V - - 700 nA

= 6 V - - 500 nA

= 7 V - - 200 nA

= 8 V - - 100 nA

= 0.7V

Z(nom)

--50nA

Product data sheet Rev. 04 — 19 July 2007 3 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24

Tj=25°C unless otherwise speciﬁed.

BZV55-xxxSel Working

voltage

(V)

IZ=5mA IZ=1mA IZ=5mA IZ=5mA Min Max Typ Max Typ Max Min Typ Max Max Max

2V4 B 2.35 2.45 275 600 70 100 −3.5 −1.6 0 450 6.0

C 2.2 2.6

2V7 B 2.65 2.75 300 600 75 100 −3.5 −2.0 0 450 6.0

C 2.5 2.9

3V0 B 2.94 3.06 325 600 80 95 −3.5 −2.1 0 450 6.0

C 2.8 3.2

3V3 B 3.23 3.37 350 600 85 95 −3.5 −2.4 0 450 6.0

C 3.1 3.5

3V6 B 3.53 3.67 375 600 85 90 −3.5 −2.4 0 450 6.0

C 3.4 3.8

3V9 B 3.82 3.98 400 600 85 90 −3.5 −2.5 0 450 6.0

C 3.7 4.1

4V3 B 4.21 4.39 410 600 80 90 −3.5 −2.5 0 450 6.0

C 4.0 4.6

4V7 B 4.61 4.79 425 500 50 80 −3.5 −1.4 0.2 300 6.0

C 4.4 5.0

5V1 B 5.0 5.2 400 480 40 60 −2.7 −0.8 1.2 300 6.0

C 4.8 5.4

5V6 B 5.49 5.71 80 400 15 40 −2.0 1.2 2.5 300 6.0

C 5.2 6.0

6V2 B 6.08 6.32 40 150 6 10 0.4 2.3 3.7 200 6.0

C 5.8 6.6

6V8 B 6.66 6.94 30 80 6 15 1.2 3.0 4.5 200 6.0

C 6.4 7.2

7V5 B 7.35 7.65 30 80 6 15 2.5 4.0 5.3 150 4.0

C 7.0 7.9

8V2 B 8.04 8.36 40 80 6 15 3.2 4.6 6.2 150 4.0

C 7.7 8.7

9V1 B 8.92 9.28 40 100 6 15 3.8 5.5 7.0 150 3.0

C 8.5 9.6

10 B 9.8 10.2 50 150 8 20 4.5 6.4 8.0 90 3.0

C 9.4 10.6

11 B 10.8 11.2 50 150 10 20 5.4 7.4 9.0 85 2.5

C 10.4 11.6

12 B 11.8 12.2 50 150 10 25 6.0 8.4 10.0 85 2.5

C 11.4 12.7

Product data sheet Rev. 04 — 19 July 2007 4 of 12

Differential resistance

(Ω)

dif

Temperature coefﬁcient

(mV/K)

Diode capacitance

[1]

(pF)

Non-repetitive peak reverse current

ZSM

(A)

[2]

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 8. Characteristics per type; BZV55-B2V4 to BZV55-C24

…continued

Tj=25°C unless otherwise speciﬁed.

BZV55-xxxSel Working

voltage V

(V)

Differential resistance r

(Ω)

dif

Temperature coefﬁcient

(mV/K)

Diode capacitance

(pF)

[1]

Non-repetitive peak reverse current

ZSM

IZ=5mA IZ=1mA IZ=5mA IZ=5mA Min Max Typ Max Typ Max Min Typ Max Max Max

13 B 12.7 13.3 50 170 10 30 7.0 9.4 11.0 80 2.5

C 12.4 14.1

15 B 14.7 15.3 50 200 10 30 9.2 11.4 13.0 75 2.0

C 13.8 15.6

16 B 15.7 16.3 50 200 10 40 10.4 12.4 14.0 75 1.5

C 15.3 17.1

18 B 17.6 18.4 50 225 10 45 12.4 14.4 16.0 70 1.5

C 16.8 19.1

20 B 19.6 20.4 60 225 15 55 12.3 15.6 18.0 60 1.5

C 18.8 21.2

22 B 21.6 22.4 60 250 20 55 14.1 17.6 20.0 60 1.25

C 20.8 23.3

24 B 23.5 24.5 60 250 25 70 15.9 19.6 22.0 55 1.25

C 22.8 25.6

(A)

[2]

[1] f = 1 MHz; VR=0V [2] tp= 100 µs; square wave; Tj=25°C prior to surge

Product data sheet Rev. 04 — 19 July 2007 5 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

Table 9. Characteristics per type; BZV55-B27 to BZV55-C75

Tj=25°C unless otherwise speciﬁed.

BZV55-xxxSel Working

voltage

(V)

IZ=2mA IZ= 0.5 mA IZ=2mA IZ=2mA Min Max Typ Max Typ Max Min Typ Max Max Max

27 B 26.5 27.5 65 300 25 80 18.0 22.7 25.3 50 1.0

C 25.1 28.9

30 B 29.4 30.6 70 300 30 80 20.6 25.7 29.4 50 1.0

C 28.0 32.0

33 B 32.3 33.7 75 325 35 80 23.3 28.7 33.4 45 0.9

C 31.0 35.0

36 B 35.3 36.7 80 350 35 90 26.0 31.8 37.4 45 0.8

C 34.0 38.0

39 B 38.2 39.8 80 350 40 130 28.7 34.8 41.2 45 0.7

C 37.0 41.0

43 B 42.1 43.9 85 375 45 150 31.4 38.8 46.6 40 0.6

C 40.0 46.0

47 B 46.1 47.9 85 375 50 170 35.0 42.9 51.8 40 0.5

C 44.0 50.0

51 B 50.0 52.0 90 400 60 180 38.6 46.9 57.2 40 0.4

C 48.0 54.0

56 B 54.9 57.1 100 425 70 200 42.2 52.0 63.8 40 0.3

C 52.0 60.0

62 B 60.8 63.2 120 450 80 215 58.8 64.4 71.6 35 0.3

C 58.0 66.0

68 B 66.6 69.4 150 475 90 240 65.6 71.7 79.8 35 0.25

C 64.0 72.0

75 B 73.5 76.5 170 500 95 255 73.4 80.2 88.6 35 0.2

C 70.0 79.0

Differential resistance

(Ω)

dif

Temperature coefﬁcient

(mV/K)

Diode capacitance

[1]

(pF)

Non-repetitive peak reverse current

ZSM

(A)

[2]

[1] f = 1 MHz; VR=0V [2] tp= 100 µs; square wave; Tj=25°C prior to surge

Product data sheet Rev. 04 — 19 July 2007 6 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

tp (ms)

mbg801

ZSM

(W)

−1

(1)

(2)

(1) Tj=25°C (prior to surge) (2) Tj= 150 °C (prior to surge)

Fig 2. Non-repetitive peak reverse power dissipation

as a function of pulse duration; maximum values

mbg783

3V9

3V6

3V3

3V0

(mV/K)

4V3

−1

−2

300

(mA)

200

100

0.6 10.8

mbg781

VF (V)

Tj=25°C

Fig 3. Forward current as a function of forward

voltage; typical values

mbg782

(mV/K)

12 11

9V1 8V2

7V5 6V8

6V2 5V6 5V1

4V7

2V4 2V7

−3 060

20 40

(mA)

BZV55-B/C2V4 to BZV55-B/C4V3 Tj=25°C to 150 °C

Fig 4. Temperature coefﬁcient as a function of

working current; typical values

−5 02016

4812

(mA)

BZV55-B/C4V7 to BZV55-B/C12 Tj=25°C to 150 °C

Fig 5. Temperature coefﬁcient as a function of

working current; typical values

Product data sheet Rev. 04 — 19 July 2007 7 of 12

NXP Semiconductors

8. Package outline

BZV55 series

Voltage regulator diodes

Hermetically sealed glass surface-mounted package; 2 connectors

(1)

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. The marking band indicates the cathode.

1.60

1.45

OUTLINE VERSION

SOD80C 100H01

3.7

3.3

0.3

REFERENCES

IEC JEDEC JEITA

0 1 2 mm

scale

EUROPEAN

PROJECTION

SOD80C

ISSUE DATE

05-01-26 06-03-16

Fig 6. Package outline SOD80C

9. Packing information

Table 10. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

BZV55-B2V4 to BZV55-C75

[1] For further information and the availability of packing methods, seeSection 13.

[1]

2500 10000

SOD80C 4 mm pitch, 8 mm tape and reel -115 -135

Product data sheet Rev. 04 — 19 July 2007 8 of 12

NXP Semiconductors

10. Soldering

Fig 7. Reﬂow soldering footprint SOD80C

BZV55 series

Voltage regulator diodes

4.55

4.30

2.30 solder lands solder paste

1.601.702.25

0.90 (2x)

6.30

4.90

2.70

1.90

sod080c

solder resist occupied area

Dimensions in mm

1.702.90

Fig 8. Wave soldering footprint SOD80C

solder lands solder resist occupied area tracks

Dimensions in mm

sod080c

Product data sheet Rev. 04 — 19 July 2007 9 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

11. Revision history

Table 11. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BZV55_SER_4 20070719 Product data sheet CPCN200508022F BZV55_3 Modiﬁcations:

BZV55_3 20020228 Product speciﬁcation - BZV55_2 BZV55_2 19990521 Product speciﬁcation - BZV55_1 BZV55_1 19960426 Product speciﬁcation - -

• The format of this data sheet has been redesigned to comply with the new identity guidelines

of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Section 4 “Marking”: enhanced as per CPCN200508022F

• Table 5: I

• Table 6: R

continuous forward current redeﬁned to forward current

thermal resistance from junction to tie-point redeﬁned to R

th(j-tp)

th(j-t)

• Figure 1: amended

• Section 9 “Packing information”: added

• Section 12 “Legal information”: updated

Product data sheet Rev. 04 — 19 July 2007 10 of 12

NXP Semiconductors

12. Legal information

12.1 Data sheet status

BZV55 series

Voltage regulator diodes

Document status

Objective [short] data sheet Development This document contains data from the objective speciﬁcation for product development. Preliminary [short] data sheet Qualiﬁcation This document contains data from the preliminary speciﬁcation. Product [short] data sheet Production This document contains the product speciﬁcation.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Deﬁnitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modiﬁcations or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title.A short data sheet is intended for quick referenceonly andshould notbe reliedupon tocontain detailedand full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or warranties, expressedor implied, asto theaccuracy or completeness ofsuch information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation speciﬁcations and product descriptions, at any time and without notice. This document supersedes and replaces all informationsupplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Deﬁnition

malfunction of a NXPSemiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in the Absolute Maximum Ratings System of IEC 60134)may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at

http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conﬂict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyanceor implication of any license under any copyrights, patents or other industrial or intellectual property rights.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks are the property of their respective owners.

13. Contact information

For additional information, please visit: http://www.nxp.com For sales ofﬁce addresses, send an email to: salesaddresses@nxp.com

Product data sheet Rev. 04 — 19 July 2007 11 of 12

NXP Semiconductors

14. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

12.2 Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information. . . . . . . . . . . . . . . . . . . . . 11

14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BZV55 series

Voltage regulator diodes

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 19 July 2007

Document identifier: BZV55_SER_4

NXP BZV55 Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual

1.1 General description

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

6. Thermal characteristics

7. Characteristics

8. Package outline

9. Packing information

10. Soldering

11. Revision history

12. Legal information

12.1 Data sheet status

12.3 Disclaimers

12.4 Trademarks

13. Contact information

14. Contents