NXP BZT52H-B10, BZT52H-B11, BZT52H-B12, BZT52H-B13, BZT52H-B15 Schematic [ru]
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BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010 Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Total power dissipation: ≤ 83 0 mW Low differential resistance
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Small plastic package suitable for
surface-mounted design
AEC-Q101 qualified
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
F
P
tot
[1] Pulse test: tp≤ 300μs; δ≤0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
forward voltage IF=10mA
total power dissipation T
footprint.
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode
2 anode
amb
≤ 25 °C
[1]
[1]
--0.9V
[2]
--375mW
[3]
--830mW
21
1
2
006aaa15
[1] The marking bar indicates the cathode.
NXP Semiconductors
3. Ordering information
Table 3. Ordering information
Type number Package
BZT52H-B2V4 to
BZT52H-C75
[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
[1]
4. Marking
BZT52H series
Single Zener diodes in a SOD123F package
Name Description Version
- plastic surface-mounted package; 2 leads SOD123F
code
Type number Marking
code
Ty pe numb er Marking
code
Type number Marking
code
Table 4. Marking codes
Type number Marking
BZT52H-B2V4 DC BZT52H-B15 DX BZT52H-C2V4 B3 BZT52H-C15 BN
BZT52H-B2V7 DD BZT52H-B16 DY BZT52H-C2V7 B4 BZT52H-C16 BP
BZT52H-B3V0 DE BZT52H-B18 DZ BZT52H-C3V0 B5 BZT52H-C18 BQ
BZT52H-B3V3 DF BZT52H-B20 E1 BZT52H-C3V3 B6 BZT52H-C20 BR
BZT52H-B3V6 DG BZT52H-B22 E2 BZT52H-C3V6 B7 BZT52H-C22 BS
BZT52H-B3V9 DH BZT52H-B24 E3 BZT52H-C3V9 B8 BZT52H-C24 BT
BZT52H-B4V3 DJ BZT52H-B27 E4 BZT52H-C4V3 B9 BZT52H-C27 BU
BZT52H-B4V7 DK BZT52H-B30 E5 BZT52H-C4V7 BA BZT52H-C30 BV
BZT52H-B5V1 DL BZT52H-B33 E6 BZT52H-C5V1 BB BZT52H-C33 BW
BZT52H-B5V6 DM BZT52H-B36 E7 BZT52H-C5V6 BC BZT52H-C36 BX
BZT52H-B6V2 DN BZT52H-B39 E8 BZT52H-C6V2 BD BZT52H-C39 BY
BZT52H-B6V8 DP BZT52H-B43 E9 BZT52H-C6V8 BE BZT52H-C43 BZ
BZT52H-B7V5 DQ BZT52H-B47 EA BZT52H-C7V5 BF BZT52H-C47 C1
BZT52H-B8V2 DR BZT52H-B51 EB BZT52H-C8V2 BG BZT52H-C51 C2
BZT52H-B9V1 DS BZT52H-B56 EC BZT52H-C9V1 BH BZT52H-C56 C3
BZT52H-B10 DT BZT52H-B62 ED BZT52H-C10 BJ BZT52H-C62 C4
BZT52H-B11 DU BZT52H-B68 EE BZT52H-C11 BK BZT52H-C68 C5
BZT52H-B12 DV BZT52H-B75 EF BZT52H-C12 BL BZT52H-C75 C6
BZT52H-B13 DW - - BZT52H-C13 BM - -
BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 2 of 13
NXP Semiconductors
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1] tp=100μs; square wave; Tj=25°C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
BZT52H series
Single Zener diodes in a SOD123F package
forward current - 250 mA
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation T
amb
≤ 25 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
- see
Table 8, 9
10
and
[1]
-40W
[2]
- 375 mW
[3]
- 830 mW
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
R
th(j-sp)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Soldering point of cathode tab.
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
in free air
[1]
--330K/W
[2]
--150K/W
[3]
--70K/W
BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 3 of 13
NXP Semiconductors
7. Characteristics
Table 7. Ch aracteristics
Tj=25°C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
[1] Pulse test: tp≤ 300 μs; δ≤0.02.
forward voltage IF=10mA
BZT52H series
Single Zener diodes in a SOD123F package
[1]
--0.9V
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Tj=25°C unless otherwise specified.
BZT52H
-xxx
Sel Working
voltage
(V);
V
Z
IZ=5mA
Maximum differential
resistance r
dif
(Ω)
Reverse
current IR(μA)
Temperature
coefficient
(mV/K);
S
Z
IZ=5mA
Diode
capacitance
[1]
(pF)
C
d
Non-repetitive
peak reverse
current
I
Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max
2V4 B 2.35 2.45 400 85 50 1 −3.5 0.0 450 6.0
C2.22.6
2V7 B 2.65 2.75 500 83 20 1 −3.5 0.0 450 6.0
C2.52.9
3V0 B 2.94 3.06 500 95 10 1 −3.5 0.0 450 6.0
C2.83.2
3V3 B 3.23 3.37 500 95 5 1 −3.5 0.0 450 6.0
C3.13.5
3V6 B 3.53 3.67 500 95 5 1 −3.5 0.0 450 6.0
C3.43.8
3V9 B 3.82 3.98 500 95 3 1 −3.5 0.0 450 6.0
C3.74.1
4V3 B 4.21 4.39 500 95 3 1 −3.5 0.0 450 6.0
C4.04.6
4V7 B 4.61 4.79 500 78 3 2 −3.5 0.2 300 6.0
C4.45.0
5V1 B 5.0 5.2 480 60 2 2 −2.7 1.2 300 6.0
C4.85.4
5V6 B 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0
C5.26.0
6V2 B 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0
C5.86.6
6V8 B 6.66 6.94 80 8 2 4 1.2 4.5 200 6.0
C6.47.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3 150 4.0
C7.07.9
8V2 B 8.04 8.36 80 10 0.7 5 3.2 6.2 150 4.0
C7.78.7
ZSM
(A)
[2]
BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 4 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24
…continued
Tj=25°C unless otherwise specified.
BZT52H
-xxx
Sel Working
voltage
VZ(V);
=5mA
I
Z
Maximum differential
resistance r
dif
(Ω)
Reverse
current IR(μA)
Temperature
coefficient
SZ(mV/K);
=5mA
I
Z
Diode
capacitance
Cd(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
Min Max IZ=1mA IZ=5mA Max VR(V) Min Max Max Max
9V1 B 8.92 9.28 100 10 0.5 6 3.8 7.0 150 3.0
C8.59.6
10 B 9.8 10.2 70 10 0.2 7 4.5 8.0 90 3.0
C 9.4 10.6
11 B 10.8 11.2 70 10 0.1 8 5.4 9.0 85 2.5
C 10.4 11.6
12 B 11.8 12.2 90 10 0.1 8 6.0 10.0 85 2.5
C 11.4 12.7
13 B 12.7 13.3 110 10 0.1 8 7.0 11.0 80 2.5
C 12.4 14.1
15 B 14.7 15.3 110 15 0.05 10.5 9.2 13.0 75 2.0
C 13.8 15.6
16 B 15.7 16.3 170 20 0.05 11.2 10.4 14.0 75 1.5
C 15.3 17.1
18 B 17.6 18.4 170 20 0.05 12.6 12.4 16.0 70 1.5
C 16.8 19.1
20 B 19.6 20.4 220 20 0.05 14 14.4 18.0 60 1.5
C 18.8 21.2
22 B 21.6 22.4 220 25 0.05 15.4 16.4 20.0 60 1.25
C 20.8 23.3
24 B 23.5 24.5 220 30 0.05 16.8 18.4 22.0 55 1.25
C 22.8 25.6
(A)
[2]
[1] f = 1 MHz; VR=0V.
= 100 μs; T
[2] t
p
BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 5 of 13
amb
=25°C.
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