NXP BYW 29E-200B Datasheet

Philips Semiconductors Product specification

Rectifier diodes BYW29E series
ultrafast, rugged

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop VR = 100V/ 150 V/ 200 V

• Fast switching

• Soft recovery characteristic VF ≤ 0.895 V

• Reverse surge capability

• High thermal cycling performance I

• Low thermal resistance

GENERAL DESCRIPTION PINNING SOD59 (TO220AC)

k a
12

= 8 A

F(AV)

I

≤ 0.2 A

RRM

trr ≤ 25 ns

Ultra-fast, epitaxial rectifier diodes PIN DESCRIPTION
intended foruse as output rectifiers

tab

in high frequency switched mode 1 cathode
power supplies.

2 anode
The BYW29E series is supplied in
the conventional leaded SOD59 tab cathode
(TO220AC) package.

1

2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V

I

F(AV)

I

FRM

I

FSM

I

RRM

I

RSM

T
T

RRM

RWM

R

j

stg

Peak repetitive reverse - 100 150 200 V
voltage
Working peak reverse - 100 150 200 V
voltage
Continuous reverse voltage - 100 150 200 V

Average rectified forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 8 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 128 ˚C - 16 A
current
Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A

sinusoidal; with reapplied V

Peak repetitive reverse tp = 2 µs; δ = 0.001 - 0.2 A
surge current
Peak non-repetitive reverse tp = 100 µs - 0.2 A
surge current
Operating junction - 150 ˚C
temperature
Storage temperature - 40 150 ˚C

BYW29E -100 -150 -200

RRM(max)

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

August 2001 1 Rev 1.400

Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ

Philips Semiconductors Product specification

Rectifier diodes BYW29E series
ultrafast, rugged

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

F

I

R

Q

rr

t

rr1

t

rr2

V

fr

Thermal resistance junction - - 2.7 K/W
to mounting base
Thermal resistance junction in free air - 60 - K/W
to ambient

Forward voltage IF = 8 A; Tj = 150˚C - 0.8 0.895 V

IF = 8 A - 0.92 1.05 V

IF = 20 A - 1.1 1.3 V

Reverse current VR = V
Reverse recovered charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-411nC

VR = V

RWM

; Tj = 100˚C - 0.2 0.6 mA

RWM

-210µA

Reverse recovery time IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs2025ns
Reverse recovery time IF = 0.5 A to IR = 1 A; I
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V

= 0.25 A - 15 20 ns

rec

August 2001 2 Rev 1.400

Philips Semiconductors Product specification

Rectifier diodes BYW29E series
ultrafast, rugged

I

F

dI

F

dt

t

rr

time

Q

s

I

R

I

F

I

rrm

Fig.1. Definition of t

, Qs and I

rr1

10%

rrm

100%

time

V

F

V

fr

V

F

time

Fig.2. Definition of V

fr

0.5A

IF

0A

I = 0.25A

rec

IR

trr2

I = 1A

R

Fig.4. Definition of t

PF / W

12

Vo = 0.791 V
Rs = 0.013 Ohms

10

8

6

4

2

0

024681012

0.1

BYW29

0.2

IF(AV) / A

rr2

Tmb(max) / C

D = 1.0

0.5

p

p

t

I

t

D =

T

t

T

Fig.5. Maximum forward dissipation PF = f(I

square current waveform where I

F(AV)

=I

F(RMS)

108

115

122

129

136

143

150

);

F(AV)

x √D.

2.2

F(AV)

Tmb(max) / C

a = 1.57

1.9

.

122

125.5
129

132.5
136

139.5
143

146.5
150

F(AV)

);

R

Voltage Pulse Source

Current
shunt

Fig.3. Circuit schematic for t

D.U.T.

to ’scope

rr2

PF / W

8

Vo = 0.791 V
Rs = 0.013 Ohms

7
6
5
4
3
2
1
0

012345678

BYW29

2.8

4

IF(AV) / A

Fig.6. Maximum forward dissipation PF = f(I

sinusoidal current waveform where a = form

factor = I

F(RMS)

/ I

August 2001 3 Rev 1.400

Philips Semiconductors Product specification

Rectifier diodes BYW29E series
ultrafast, rugged

trr / ns

1000

100

10

1

1 10 100

IF=10A

IF=1A

dIF/dt (A/us)

Fig.7. Maximum trr at Tj = 25 ˚C.

Irrm / A

10

IF=10A

1

IF=1A

0.1

Qs / nC

100

IF=10A

5A
2A
1A

10

1.0

1.0 10 100

-dIF/dt (A/us)

Fig.10. Maximum Qs at Tj = 25 ˚C.

Transient thermal impedance, Zth j-mb (K/W)

10

1

0.1

p

0.01

p

t

P

D

D =

t
T

0.01
1

Fig.8. Maximum I

IF / A

30

Tj=150 C
Tj=25 C

20

10

0

0 1 2

typ

0.5 1.5

10 100

-dIF/dt (A/us)

at Tj = 25 ˚C.

rrm

max

VF / V

BYW29

Fig.9. Typical and maximum forward characteristic

IF = f(VF); parameter T

j

0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s

pulse width, tp (s)

T

PBYL1025

Fig.11. Transient thermal impedance; Z

t

th j-mb

= f(tp).

August 2001 4 Rev 1.400

Philips Semiconductors Product specification

Rectifier diodes BYW29E series
ultrafast, rugged

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220 SOD59

AE

P

D

1

D

(1)

L

2

b

1

L

q

L

1

12

b

e

A

1

Q

c

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE
VERSION

SOD59 97-06-112-lead TO-220

b

1

0.9

1.3

0.7

1.0

IEC JEDEC EIAJ

0.7

0.4

c

D

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

5.08

15.0

13.5

L

L

3.30

2.79

(1)

L

1

2

3.0

qQ

P

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

Fig.12. TO220AC; pin 1 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

August 2001 5 Rev 1.400

Philips Semiconductors Product specification

Rectifier diodes BYW29E series
ultrafast, rugged

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

August 2001 6 Rev 1.400