Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, 2 columns
M3D116
BYV95 series
Fast soft-recovery
controlled avalanche rectifiers
Product specification
Supersedes data of April 1982
1996 Jun 07
Page 2
Philips Semiconductors Product specification
Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
FEATURES
• Glass passivated
• High maximum operating
temperature
DESCRIPTION
Rugged glass SOD57 package,
using a high temperature alloyed
construction. This package is
• Low leakage current
• Excellent stability
ka
• Guaranteed avalanche energy
2/3 page (Datasheet)
absorption capability
• Available in ammo-pack.
Fig.1 Simplified outline (SOD57) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
repetitive peak reverse voltage
BYV95A − 200 V
BYV95B − 400 V
BYV95C − 600 V
V
R
continuous reverse voltage
BYV95A − 200 V
BYV95B − 400 V
BYV95C − 600 V
I
F(AV)
average forward current Ttp=65°C; lead length = 10 mm
see Fig. 2;
averaged over any 20 ms period;
see also Fig. 6
T
=65°C; PCB mounting (see
amb
Fig.11); see Fig. 3;
averaged over any 20 ms period;
see also Fig. 6
I
FRM
I
FSM
E
RSM
T
stg
T
j
repetitive peak forward current Ttp=65°C; see Fig. 4 − 17 A
T
=65°C; see Fig. 5 − 9A
amb
non-repetitive peak forward current t = 10 ms half sine wave;
non-repetitive peak reverse
avalanche energy
Tj=T
VR=V
L = 120 mH; Tj=T
surge; inductive load switched off
prior to surge;
j max
RRMmax
j max
storage temperature −65 +175 °C
junction temperature see Fig. 7 −65 +175 °C
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
MAM047
− 1.5 A
− 0.8 A
− 35 A
prior to
− 10 mJ
1996 Jun 07 2
Page 3
Philips Semiconductors Product specification
Fast soft-recovery
BYV95 series
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
V
(BR)R
I
R
t
rr
C
d
dI
R
-------dt
forward voltage IF= 3 A; Tj=T
I
= 3 A; see Fig. 8 −−1.60 V
F
reverse avalanche
IR= 0.1 mA
breakdown voltage
BYV95A 300 −−V
BYV95B 500 −−V
BYV95C 700 −−V
reverse current VR=V
RRMmax
see Fig. 9
V
R=VRRMmax
see Fig. 9
reverse recovery time when switched from IF= 0.5 A
to IR= 1 A; measured at
IR= 0.25 A; see Fig. 12
diode capacitance f = 1 MHz; VR= 0 V; see Fig. 10 − 45 − pF
maximum slope of
reverse recovery current
when switched from I
VR≥ 30 V and dIF/dt = −1A/µs;
see Fig.13
; see Fig. 8 −−1.35 V
j max
;
; Tj= 165 °C;
−−1µA
−−150 µA
−−250 ns
= 1 A to
F
−−7A/µs
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-tp
th j-a
thermal resistance from junction to tie-point lead length = 10 mm 46 K/W
thermal resistance from junction to ambient note 1 100 K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”
.
1996 Jun 07 3
Page 4
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
2.0
handbook, halfpage
I
F(AV)
(A)
1.6
1.2
0.8
0.4
0
0 200
a =1.42; VR=V
Switched mode application.
lead length 10 mm
; δ= 0.5.
RRMmax
100
o
Ttp ( C)
MGC581
1.2
handbook, halfpage
I
F(AV)
(A)
0.8
0.4
0
0
a =1.42; VR=V
Device mounted as shown in Fig.11.
Switched mode application.
RRMmax
; δ= 0.5.
BYV95 series
100
T
( C)
amb
MGC580
200
o
Fig.2 Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
20
handbook, full pagewidth
I
FRM
(A)
16
12
8
4
0
2
10
δ =
0.05
0.1
0.2
0.5
1
1
10
11010
Fig.3 Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGC578
2
3
10
tp (ms)
10
4
Ttp=65°C; R
V
during 1 −δ; curves include derating for T
RRMmax
th j-tp
= 46K/W.
j max
at V
RRM
= 600V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Jun 07 4
Page 5
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
10
handbook, full pagewidth
I
FRM
(A)
8
6
4
2
0
2
10
δ =
0.05
0.1
0.2
0.5
1
1
10
11010
2
BYV95 series
MGC579
3
10
tp (ms)
4
10
T
=65°C; R
amb
V
during 1 −δ; curves include derating for T
RRMmax
th j-a
= 100K/W.
j max
at V
RRM
= 600V.
Fig.5 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1.57
1.42
(A)
MGC576
200
handbook, halfpage
T
j
o
( C)
100
0
0 200 400 800
BAC
P
(W)
3
2
1
0
0
handbook, halfpage
2
2.5
a = 3
12
I
F(AV)
600
MGC575
VR (V)
a=I
F(RMS)/IF(AV)
; VR=V
RRMmax
; δ= 0.5.
Fig.6 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
1996 Jun 07 5
Solid line = VR.
Dotted line = V
RRM
; δ= 0.5.
Fig.7 Maximum permissible junction temperature
as a function of reverse voltage.
Page 6
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, halfpage
8
I
F
(A)
6
4
2
0
0123
V
F
MGC577
(V)
3
10
handbook, halfpage
I
R
(µA)
2
10
10
1
1
10
BYV95 series
100
Tj ( C)
MGC574
o
2000
Dotted line: Tj= 175°C.
Solid line: Tj=25°C.
Fig.8 Forward current as a function of forward
voltage; maximum values.
2
10
handbook, halfpage
C
d
(pF)
10
1
1
10 10
2
MGC582
VR (V)
VR=V
RRMmax
.
Fig.9 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
3
10
50
25
7
50
2
3
MGA200
f =1 MHz; Tj=25°C.
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
1996 Jun 07 6
Dimensions in mm.
Fig.11 Device mounted on a printed-circuit board.
Page 7
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
handbook, full pagewidth
10 Ω
25 V
DUT
+
1 Ω
50 Ω
I
(A)
0.25
R
I
(A)
0.5
0.5
1.0
BYV95 series
F
t
rr
0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22pF; tr≤ 7ns.
Source impedance: 50 Ω; tr≤ 15ns.
Fig.12 Test circuit and reverse recovery time waveform and definition.
I
ndbook, halfpage
F
dI
F
dt
t
rr
dI
R
dt
I
R
10%
100%
t
MGC499
Fig.13 Reverse recovery definitions.
1996 Jun 07 7
Page 8
Philips Semiconductors Product specification
Fast soft-recovery
controlled avalanche rectifiers
PACKAGE OUTLINE
handbook, full pagewidth
3.81
max
Dimensions in mm.
The marking band indicates the cathode.
BYV95 series
ka
4.57
max
28 min28 min
Fig.14 SOD57.
0.81
max
MBC880
DEFINITIONS
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 07 8
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