Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop VR = 100/ 150 V/ 200 V
• Fast switching
• Soft recovery characteristic VF ≤ 0.85 V
• Reverse surge capability
• High thermal cycling performance I
• Low thermal resistance
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
a1
a2
13
k
2
= 20 A
O(AV)
I
= 0.2 A
RRM
trr ≤ 25 ns
PIN DESCRIPTION
tab
tab
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab cathode (k)
1
2
123
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
O(AV)
RRM
RWM
R
Peaqk repetitive reverse - 100 150 200 V
voltage
Crest working reverse voltage - 100 150 200 V
Continuous reverse voltage - 100 150 200 V
Average rectified output current square wave; δ = 0.5; - 20 A
(both diodes conducting) Tmb ≤ 115 ˚C
I
I
FRM
FSM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A
per diode Tmb ≤ 115 ˚C
Non-repetitive peak forward t = 10 ms - 125 A
current per diode t = 8.3 ms - 137 A
sinusoidal; with reapplied
V
I
RRM
I
RSM
T
T
stg
j
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
per diode
Non-repetitive peak reverse tp = 100 µs - 0.2 A
current per diode
Storage temperature -40 150 ˚C
Operating junction temperature - 150 ˚C
1 It is not possible to make connection to pin 2 of the SOT404 package
BYV32E / BYV32EB -100 -150 -200
RWM(max)
August 2001 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
R
th j-mb
th j-a
Thermal resistance junction per diode - - 2.4 K/W
to mounting base both diodes - - 1.6 K/W
Thermal resistance junction SOT78 package, in free air - 60 - K/W
to ambient SOT404 and SOT428 packages, pcb - 50 - K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
Q
s
t
rr1
t
rr2
V
fr
Forward voltage IF = 8 A; Tj = 150˚C - 0.72 0.85 V
IF = 20 A - 1.00 1.15 V
Reverse current VR = V
VR = V
Reverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 8 12.5 nC
; Tj = 100 ˚C - 0.2 0.6 mA
RWM
RWM
-630µA
Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
Reverse recovery time IF = 0.5 A to IR = 1 A; I
= 0.25 A - 10 20 ns
rec
Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
August 2001 2 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
F
I
rrm
Fig.1. Definition of t
, Qs and I
rr1
10%
100%
rrm
time
V
F
V
fr
V
F
time
Fig.2. Definition of V
fr
0.5A
IF
0A
I = 0.25A
rec
IR
trr2
I = 1A
R
Fig.4. Definition of t
PF / W
15
Vo = 0.7 V
Rs = 0.0183 Ohms
10
0.1
5
0
0 5 10 15
BYV32
0.2
IF(AV) / A
rr2
Tmb(max) / C
D = 1.0
0.5
p
t
I
D =
T
Fig.5. Maximum forward dissipation PF = f(I
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x √D.
t
T
p
t
F(AV)
114
126
138
150
) per
Tmb(max) / C
1.9
a = 1.57
126
130.8
135.6
140.4
Voltage Pulse Source
R
D.U.T.
PF / W
10
Vo = 0.7 V
Rs = 0.0183 Ohms
8
6
4
BYV32
2.2
2.8
4
Current
shunt
Fig.3. Circuit schematic for t
to ’scope
rr2
2
0
0246810
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(I
F(AV)
145.2
150
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
August 2001 3 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
trr / ns
1000
100
10
1
1 10 100
IF=10A
IF=1A
dIF/dt (A/us)
Fig.7. Maximum trr at Tj = 25 ˚C; per diode
Irrm / A
10
IF=10A
1
IF=1A
0.1
Qs / nC
100
IF=10A
5A
2A
1A
10
1.0
1.0 10 100
-dIF/dt (A/us)
Fig.10. Maximum Qs at Tj = 25 ˚C; per diode
Transient thermal impedance, Zth j-mb (K/W)
10
1
0.1
p
0.01
p
t
P
D
D =
t
T
0.01
1
Fig.8. Maximum I
IF / A
30
Tj=150 C
Tj=25 C
20
10
0
0 1
0.5 1.5
10 100
-dIF/dt (A/us)
at Tj = 25 ˚C; per diode
rrm
typ
max
VF / V
Fig.9. Typical and maximum forward characteristic
per diode; IF = f(VF); parameter T
j
0.001
1us 10us 100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
T
t
BYV32E
Fig.11. Transient thermal impedance; per diode;
Z
= f(tp).
th j-mb
August 2001 4 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
4,5
max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2001 5 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
11.5
2.5
Notes
1. Epoxy meets UL94 V0 at 1/8".
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : soldering pattern for surface mounting.
August 2001 6 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes BYV32E, BYV32EB series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 2001 7 Rev 1.300
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