Page 1
Philips Semiconductors Initial specification
Silicon Diffused Power Transistor BU2532AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.17 A - 5.0 V
Collector saturation current f = 82 kHz 7 - A
Storage time I
= 7.0 A; f = 82 kHz 1.4 1.8 µs
Csat
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Base current (DC) - 10 A
Base current peak value - 15 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-10A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.000
Page 2
Philips Semiconductors Initial specification
Silicon Diffused Power Transistor BU2532AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
V
h
h
EBO
CEsat
BEsat
FE
FE
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Base-emitter breakdown voltage IB = 1 mA 7.5 14 - V
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.17 A - - 5.0 V
Base-emitter saturation voltage IC = 7.0 A; IB = 1.17 A 0.80 0.88 0.97 V
DC current gain IC = 1 A; VCE = 5 V 9 17 27
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (82 kHz line I
t
s
t
f
deflection dynamic test circuit). VCC = 138 V; I
Turn-off storage time 1.4 1.8 µs
Turn-off fall time 0.06 0.1 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
IC = 7 A; VCE = 5 V 6 9 12.5
= 7.0 A; LC = 100 µH; Cfb = 3 nF;
Csat
B(end)
= 1.0 A
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.000
Page 3
Philips Semiconductors Initial specification
Silicon Diffused Power Transistor BU2532AW
I
TRANSISTOR
IC
DIODE
Csat
t
hFE BU2530/2AL
100
VCE = 1 V
Tj = 85 C
Tj = 25 C
IB
5us3.5us
12.2us
VCE
Fig.1. Switching times waveforms.
90 %
IC
10 %
IB
ts
IBend
tf
Fig.2. Switching times definitions.
ICsat
IBend
- IBM
t
t
10
1
0.01 0.1 1 10 100
IC / A
Fig.4. High and low DC current gain. hFE = f (IC)
VCE = 1 V
hFE BU2530/2AL
100
VCE = 5 V
t
10
Tj = 85 C
Tj = 25 C
t
1
0.01 0.1 1 10 100
IC / A
Fig.5. High and low DC current gain. hFE = f (IC)
VCE = 5 V
IBend
LB
T.U.T.
+ 150 v nominal
adjust for ICsat
Lc
Cfb
VCEsat / V BU2530/2AL
10
Tj = 85 C
Tj = 25 C
1
IC/IB = 10
0.1
IC/IB = 5
-VBB
0.01
Fig.3. Switching times test circuit
0.1 1 10 100
.
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/I
IC / A
B
September 1997 3 Rev 1.000
Page 4
Philips Semiconductors Initial specification
Silicon Diffused Power Transistor BU2532AW
VBEsat / V BU2530/2AL
1
IC = 9 A
0.9
0.8
0.7
0.6
01234
IC = 7 A
Tj = 85 C
Tj = 25 C
IB / A
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter I
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
Tmb / C
C
Fig.8. Normalised power dissipation.
PD% = 100⋅PD/P
D 25˚C
= f (Tmb)
VCC
LC
IBend
-VBB
LB
T.U.T.
Fig.10. Test Circuit RBSOA. VCC = 150 V;
-VBB = 1 - 5 V;
LC = 1.5 mH; VCL = 1450 V; LB = 0.3 - 2 µH;
CFB = 1 - 10 nF; I
IC / A
40
30
20
10
0
100 1000 1500
VCE / V
= 1.0 - 2.0 A
B(end)
BU2530/32AL
Area where
fails occur
Fig.11. Reverse bias safe operating area. Tj ≤ T
VCL
CFB
jmax
Zth / (K/W)
10
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
D = 0
0.001
1E-06 1E-04 1E-02 1E+00
t / s
P
D
t
p
T
BU2525A
t
p
D =
T
t
Fig.9. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
September 1997 4 Rev 1.000
Page 5
Philips Semiconductors Initial specification
Silicon Diffused Power Transistor BU2532AW
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
21
max
15.5
min
3.5
4.0
max
2.2 max
3.2 max
16 max
5.3
15.5
max
1
2
5.45
3
1.1
5.45
7.3
seating
0.4
5.3 max
1.8
o
plane
2.5
0.9 max
M
Fig.12. SOT429; pin 2 connected to mounting base.
3.5
max
Notes
1. Refer to mounting instructions for SOT429 envelope.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 5 Rev 1.000
Page 6
Philips Semiconductors Initial specification
Silicon Diffused Power Transistor BU2532AW
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.000
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