NXP BTA416Y Technical data

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BTA416Y series B and C

16 A Three-quadrant triacs, insulated, high commutation,high
temperature

Rev. 01 — 3 October 2007 Product data sheet

1. Product profile

1.1 General description

Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.

1.2 Features

n Very high commutation performance n High immunity to dV/dt
n Isolated mounting base n 2500 V RMS isolation voltage
n High operating junction temperature

1.3 Applications

n Heating and cooking appliances n Non-linear rectifier-fed motor loads
n High power motor control e.g. vacuum

cleaners

n Solid-state relays

n Electronic thermostats for heating and

cooling loads

1.4 Quick reference data

n V
n V
n I

≤ 600 V (BTA416Y-600B and C) n IGT≤ 50 mA (BTA416Y series B)

DRM

≤ 800 V (BTA416Y-800B and C) n IGT≤ 35 mA (BTA416Y series C)

DRM

≤ 160 A (t = 20 ms) n I

TSM

T(RMS)

≤ 16 A

2. Pinning information

Table 1. Pinning

Pin Description Simplified outline Symbol

1 main terminal 1 (T1)
2 main terminal 2 (T2)
3 gate (G)
mb mounting base; isolated

T2

sym051

T1
G

12mb3

SOT78D (TO-220)

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

3. Ordering information

Table 2. Ordering information

Type number Package

Name Description Version

BTA416Y-600B TO-220 plastic single-ended package;isolated heatsink mounted; 1 mounting hole;
BTA416Y-600C

3-lead TO-220

SOT78D

BTA416Y-800B
BTA416Y-800C

4. Limiting values

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

repetitive peak off-state voltage BTA416Y-600B; BTA416Y-600C

BTA416Y-800B; BTA416Y-800C - 800 V

I

T(RMS)

RMS on-state current full sine wave; Tmb≤ 108 °C; see

Figure 4 and 5

I

TSM

non-repetitive peak on-state current full sine wave; Tj=25°C prior to

surge; see

Figure 2 and 3

t = 20 ms - 160 A
t = 16.7 ms - 176 A

2

tI

I

/dt rate of rise of on-state current ITM= 20 A; IG= 0.2 A;

dI

T

I

GM

P

GM

P

G(AV)

T

stg

T

j

2

t for fusing t = 10 ms - 128 A2s

dI

/dt = 0.2 A/µs

G

peak gate current - 2 A
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 150 °C

[1]

- 600 V

-16A

- 100 A/µs

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthetriacmayswitch to the on-state. The

rate of rise of current should not exceed 15 A/µs.

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 2 of 12

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

20

P
(W)

conduction

tot

angle

(degrees)

16

12

30
60

90
120
180

8

4

0

024681012141618

form

factor

a
4

2.8

2.2

1.9

1.57

α

α = conduction angle

Fig 1. Total power dissipation as a function of RMS on-state current; maximum values

180

I

TSM

(A)

150

003aab816

α = 180°

120°

90°

60°

30°

I

T(RMS)

003aab817

(A)

120

90

60

30

0

1 10 10

I

T

T

j(init)

2

n (number of cycles)

I

TSM

1/f
= 25 °C max

t

3

10

f = 50 Hz

Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 3 of 12

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

3

10

I

TSM

(A)

(1)

2

10

I

T

T

10

-5

10

-4

10

-3

10

-2

10

j(init)

tp≤ 20 ms

(1) dIT/dt limit

Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values

I

T(RMS)

(A)

60

50

003aab819

I

T(RMS)

(A)

20

16

003aab818

I

TSM

t

p

= 25 °C max

tp (s)

003aab820

t

-1

10

40

30

20

10

0

-2

10

-1

10

1 10

surge duration (s)

f = 50 Hz;
Tmb= 108 °C

Fig 4. RMS on-state current as a function of surge

duration; maximum values

12

8

4

0

-50 0 50 100 150
T

(°C)

mb

Fig 5. RMSon-state current as a function of mounting

base temperature; maximum values

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 4 of 12

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

5. Thermal characteristics

Table 4. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to
mounting base

thermal resistance from junction to
ambient

full cycle; see Figure 6 - - 1.9 K/W

in free air - 60 - K/W

t

p

tp (s)

003aab821

t

Z

th(j-mb)

(K/W)

10

1

−1

10

−2

10

−3

10

−5

10

−4

10

−3

10

−2

10

−1

P

11010

Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Isolation characteristics

Table 5. Isolation limiting values and characteristics

Th = 25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

V

isol(RMS)

C

isol

RMS isolation voltage from all three terminals to

external heatsink; f = 50 Hz to
60 Hz; sinusoidal waveform;
RH ≤ 65 %; clean and dust free

isolation capacitance from pin 2 to external heatsink;

f=1MHz

- - 2500 V

-10-pF

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 5 of 12

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

7. Static characteristics

Table 6. Static characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions BTA416Y-600B

BTA416Y-800B

Min Typ Max Min Typ Max

I

GT

gate trigger
current

I

L

I

H

V

T

latching current VD=12V; IGT= 0.1 A; see Figure 10

holding current VD=12V; IGT= 0.1 A; see Figure 11 --60--35mA
on-state

voltage

V

GT

gate trigger
voltage

I

D

off-state current VD=V

VD=12V; IT= 0.1 A; see Figure 8

T2+ G+ 2 - 50 2 - 35 mA
T2+ G− 2 - 50 2 - 35 mA
T2− G− 2 - 50 2 - 35 mA

T2+ G+ - - 60 - - 50 mA
T2+ G− --90--60mA
T2− G− --60--50mA

IT= 20 A; see Figure 9 - 1.2 1.5 - 1.2 1.5 V

VD=12V; IT= 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V

= 400 V; IT= 0.1 A; Tj= 150 °C 0.25 0.4 - 0.25 0.4 - V

V

D

DRM(max)

V

D=VDRM(max)

; Tj= 125 °C - 0.1 0.5 - 0.1 0.5 mA
; Tj= 150 °C - 0.4 2 - 0.4 2 mA

BTA416Y-600C
BTA416Y-800C

Unit

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 6 of 12

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

8. Dynamic characteristics

Table 7. Dynamic characteristics

Symbol Parameter Conditions BTA416Y-600B

BTA416Y-800B

Min Typ Max Min Typ Max

/dt rate of rise of

dV

D

off-state voltage

/dt rate of change of

dI

com

commutating
current

t

gt

gate-controlled
turn-on time

VDM= 0.67 × V

DRM(max)

; exponential

waveform; gate open circuit

= 125 °C 1000 - - 500 - - V/µs

T

j

= 150 °C 600 - - 300 - - V/µs

T

j

VDM= 400 V; I

T(RMS)

= 16 A; without

snubber; gate open circuit

= 125 °C 15 - - 10 - - A/ms

T

j

= 150 °C 6 - - 4 - - A/ms

T

j

ITM=20A;VD=V
dI

/dt = 5 A/µs

G

DRM(max);IG

= 0.1 A;

-2--2-µs

BTA416Y-600C
BTA416Y-800C

Unit

001aag168

Tj (°C)

V

GT

V

GT(25°C)

1.6

1.2

0.8

0.4

−50 150100500

Fig 7. Normalized gate trigger voltage as a function of

junction temperature

3

I

GT

I

GT(25°C)

(1)

(2)

2

(3)

1

0

−50 150100050

(1) T2− G−
(2) T2+ G−
(3) T2+ G+

001aag165

Tj (°C)

Fig 8. Normalized gate trigger current as a function of

junction temperature

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 7 of 12

NXP Semiconductors

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

50

I

T

(A)

40

30

20

10

0

0 0.5 1 1.5 2

(1) (2) (3)

003aab822

V

(V)

T

Vo= 1.086 V

Rs= 0.017 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values

Fig 9. On-state current as a function of on-state

voltage

3

I

L

I

L(25°C)

2

1

0

−50 150100050

001aag166

Tj (°C)

Fig 10. Normalized latching current as a function of

junction temperature

3

I

H

I

H(25°C)

2

1

0

−50 150100050

001aag167

Tj (°C)

Fig 11. Normalized holding current as a function of junction temperature

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 8 of 12

NXP Semiconductors

9. Package outline

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220

E
p

mounting

q

D

1

D

L

1

b

2

L

b

1

base

SOT78D

A

A

1

Q

123

e e

DIMENSIONS (mm are the original dimensions)

UNIT A

4.7

mm

4.3

OUTLINE
VERSION

SOT78D TO-220

b c D

A

1.40

1.25

1

b

1

0.9

1.4

0.6

1.1

IEC JEDEC JEITA

1.72

1.32

2

0.6

16.0

0.4

15.2

REFERENCES

Fig 12. Package outline SOT78D (3-lead TO-220)

M

w

b

0 5 10 mm

scale

D

1

ref

6.5

E e

10.3

9.7

2.54

L

14.0

12.8

c

L

1

p

Q

ref

3.7

3.0 0.2

3.5

q

2.6

3.0

2.2

2.7

EUROPEAN

PROJECTION

wb

ISSUE DATE

07-04-04
07-07-10

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 9 of 12

NXP Semiconductors

16 A 3-quadrant triacs, insulated, high commutation, high temperature

BTA416Y series B and C

10. Revision history

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BTA416Y_SER_B_C_1 20071003 Product data sheet - -

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 10 of 12

NXP Semiconductors

11. Legal information

11.1 Data sheet status

BTA416Y series B and C

16 A 3-quadrant triacs, insulated, high commutation, high temperature

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document mayhave changed since this document was publishedand maydiffer incase of multiple devices. The latest productstatus

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shall have no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product type number(s)and title. Ashort datasheet is intended
for quickreference only and shouldnot be relied upon to contain detailedand
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However,NXP Semiconductors does not giveany representations or
warranties, expressed or implied, as tothe accuracy or completeness ofsuch
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This documentsupersedes and replaces all information suppliedprior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofa NXP Semiconductorsproduct can reasonablybe expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134) maycause permanent
damage tothe device. Limiting valuesare stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication ofany license under any copyrights, patents
or other industrial or intellectual property rights.

11.4 Trademarks

Notice: Allreferenced brands,product names, service namesand trademarks
are the property of their respective owners.

12. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [e-mail]

BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 01 — 3 October 2007 11 of 12

NXP Semiconductors

16 A 3-quadrant triacs, insulated, high commutation, high temperature

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

6 Isolation characteristics . . . . . . . . . . . . . . . . . . 5

7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information. . . . . . . . . . . . . . . . . . . . . 11

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

BTA416Y series B and C

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]

Document identifier: BTA416Y_SER_B_C_1

Date of release: 3 October 2007