NXP BTA416Y Technical data
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BTA416Y series B and C
16 A Three-quadrant triacs, insulated, high commutation,high
temperature
Rev. 01 — 3 October 2007 Product data sheet
1. Product profile
1.1 General description
Passivated, new generation, high commutation triacs in an internally insulated TO-220
plastic package.
1.2 Features
n Very high commutation performance n High immunity to dV/dt
n Isolated mounting base n 2500 V RMS isolation voltage
n High operating junction temperature
1.3 Applications
n Heating and cooking appliances n Non-linear rectifier-fed motor loads
n High power motor control e.g. vacuum
cleaners
n Solid-state relays
n Electronic thermostats for heating and
cooling loads
1.4 Quick reference data
n V
n V
n I
≤ 600 V (BTA416Y-600B and C) n IGT≤ 50 mA (BTA416Y series B)
DRM
≤ 800 V (BTA416Y-800B and C) n IGT≤ 35 mA (BTA416Y series C)
DRM
≤ 160 A (t = 20 ms) n I
TSM
T(RMS)
≤ 16 A
2. Pinning information
Table 1. Pinning
Pin Description Simplified outline Symbol
1 main terminal 1 (T1)
2 main terminal 2 (T2)
3 gate (G)
mb mounting base; isolated
T2
sym051
T1
G
12mb3
SOT78D (TO-220)
NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs, insulated, high commutation, high temperature
3. Ordering information
Table 2. Ordering information
Type number Package
Name Description Version
BTA416Y-600B TO-220 plastic single-ended package;isolated heatsink mounted; 1 mounting hole;
BTA416Y-600C
3-lead TO-220
SOT78D
BTA416Y-800B
BTA416Y-800C
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage BTA416Y-600B; BTA416Y-600C
BTA416Y-800B; BTA416Y-800C - 800 V
I
T(RMS)
RMS on-state current full sine wave; Tmb≤ 108 °C; see
Figure 4 and 5
I
TSM
non-repetitive peak on-state current full sine wave; Tj=25°C prior to
surge; see
Figure 2 and 3
t = 20 ms - 160 A
t = 16.7 ms - 176 A
2
tI
I
/dt rate of rise of on-state current ITM= 20 A; IG= 0.2 A;
dI
T
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
t for fusing t = 10 ms - 128 A2s
dI
/dt = 0.2 A/µs
G
peak gate current - 2 A
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 150 °C
[1]
- 600 V
-16A
- 100 A/µs
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthetriacmayswitch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 October 2007 2 of 12
NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs, insulated, high commutation, high temperature
20
P
(W)
conduction
tot
angle
(degrees)
16
12
30
60
90
120
180
8
4
0
024681012141618
form
factor
a
4
2.8
2.2
1.9
1.57
α
α = conduction angle
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values
180
I
TSM
(A)
150
003aab816
α = 180°
120°
90°
60°
30°
I
T(RMS)
003aab817
(A)
120
90
60
30
0
1 10 10
I
T
T
j(init)
2
n (number of cycles)
I
TSM
1/f
= 25 °C max
t
3
10
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 October 2007 3 of 12
NXP Semiconductors
BTA416Y series B and C
16 A 3-quadrant triacs, insulated, high commutation, high temperature
3
10
I
TSM
(A)
(1)
2
10
I
T
T
10
-5
10
-4
10
-3
10
-2
10
j(init)
tp≤ 20 ms
(1) dIT/dt limit
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
I
T(RMS)
(A)
60
50
003aab819
I
T(RMS)
(A)
20
16
003aab818
I
TSM
t
p
= 25 °C max
tp (s)
003aab820
t
-1
10
40
30
20
10
0
-2
10
-1
10
1 10
surge duration (s)
f = 50 Hz;
Tmb= 108 °C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
12
8
4
0
-50 0 50 100 150
T
(°C)
mb
Fig 5. RMSon-state current as a function of mounting
base temperature; maximum values
BTA416Y_SER_B_C_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 3 October 2007 4 of 12
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