Page 1
Philips Semiconductors Product specification
Triacs BTA140 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. UNIT envelope, intended for use in applications requiring high BTA140- 600 800 bidirectional transient and blocking V
DRM
voltage capability and high thermal voltages
cycling performance. Typical I
applications include motor control, I
T(RMS)
TSM
industrial and domestic lighting, current
heating and static switching.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 25 25 A
Non-repetitive peak on-state 190 190 A
PIN DESCRIPTION
tab
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 5001600
voltages
RMS on-state current full sine wave; Tmb ≤ 91 ˚C - 25 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 190 A
I2tI
2
t for fusing t = 10 ms - 180 A2s
t = 16.7 ms - 209 A
dIT/dt Repetitive rate of rise of ITM = 30 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
-500 -600 -800
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
May 2003 1 Rev 1.500
Page 2
Philips Semiconductors Product specification
Triacs BTA140 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 1.0 K/W
junction to mounting base half cycle - - 1.4 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 6 35 mA
T2+ G- - 10 35 mA
T2- G- - 11 35 mA
T2- G+ - 23 70 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 8 40 mA
T2+ G- - 30 60 mA
T2- G- - 18 40 mA
T2- G+ - 15 60 mA
Holding current VD = 12 V; IGT = 0.1 A
T2+ - 7 60 mA
T2- - 12 60 mA
On-state voltage IT = 30 A - 1.3 1.55 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dV
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; I
com
t
gt
commutating voltage dI
/dt = 9 A/ms; gate open circuit
com
Gate controlled turn-on ITM = 30 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 100 300 - V/µs
DRM(max)
= 25 A; - 10 - V/µs
T(RMS)
; IG = 0.1 A; - 2 - µs
DRM(max)
May 2003 2 Rev 1.500
Page 3
Philips Semiconductors Product specification
Triacs BTA140 series
Ptot / W
40
30
20
10
0
0 5 10 15 20 25 30
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
T2- G+ quadrant
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
dI /dt limit
T
I
T
T / s
Tmb(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
85
95
105
115
125
IT(RMS) / A
30
25
20
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus mounting base temperature Tmb.
IT(RMS) / A
50
40
30
20
10
0
0.01 0.1 1 10
BTA140
Tmb / C
surge duration / s
91 C
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tmb ≤ 91˚C.
ITSM / A
200
I
I
T
150
Tj initial = 25 C max
100
50
0
1 10 100 1000
Number of cycles at 50Hz
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
May 2003 3 Rev 1.500
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Philips Semiconductors Product specification
Triacs BTA140 series
IGT(Tj)
IGT(25 C)
5
4
3
2
1
0
-50 0 50 100 150
Tj / C
T2+ G+
T2+ GT2- G-
T2- G+
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
IT / A
80
Tj = 125 C
Tj = 25 C
70
60
Vo = 1.073 V
Rs = 0.015 ohms
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3
BTA140
typ max
VT / V
Fig.10. Typical and maximum on-state characteristic.
Zth j-mb (K/W)
10
1
0.1
0.01
BTA140
unidirectional
bidirectional
t
P
D
p
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
dV/dt (V/us)
1000
100
dIcom/dt =
25 A/ms
10
1
0 50 100 150
tp / s
pulse width tp.
20
12
Tj / C
9.015
7.0
, versus
th j-mb
off-state dV/dt limit
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
May 2003 4 Rev 1.500
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Philips Semiconductors Product specification
Triacs BTA140 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
4,5
max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
May 2003 5 Rev 1.500
Page 6
Philips Semiconductors Product specification
Triacs BTA140 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 2003 6 Rev 1.500
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