NXP BT 139/800E Datasheet
BT139 series E
Triacs; sensitive gate
Rev. 03 — 23 September 2004 Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package.
1.2 Features
■ High sensitivity in all four quadrants.
1.3 Applications
■ General purpose bidirectional switching ■ Phase control.
1.4 Quick reference data
■ V
■ V
■ I
≤ 600 V (BT139-600E) ■ I
DRM
≤ 800 V (BT139-800E) ■ IGT≤ 10 mA (T2+ G+; T2+ G−; T2− G−)
DRM
≤ 16 A ■ IGT≤ 25 mA (T2− G+).
T(RMS)
TSM
≤ 155 A
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 main terminal 1 (T1)
2 main terminal 2 (T2)
3 gate (G)
mb mounting base, connected to main
terminal 2 (T2)
12mb3
SOT78 (TO-220AB)
T2
sym051
T1
G
Philips Semiconductors
BT139 series E
Triacs; sensitive gate
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BT139-600E SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole;
BT139-800E
3-lead TO-220AB
SOT78
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
I
T(RMS)
I
TSM
2
tI
I
/dt repetitive rate of rise of on-state
dI
T
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
repetitive peak off-state voltage
[1]
BT139-600E
- 600 V
BT139-800E - 800 V
RMS on-state current full sinewave;
T
≤ 99 °C; Figure 4
mb
and
Figure 5
-16A
non-repetitive peak on-state current full sine wave;
T
=25°C prior to
j
surge;
Figure 2 and
Figure 3
t = 20 ms - 155 A
t = 16.7 ms - 170 A
2
t for fusing t = 10 ms - 120 A2s
ITM= 20 A; IG= 0.2 A;
current after triggering
dI
/dt = 0.2 A/µs
G
T2+ G+ - 50 A/µs
T2+ G− -50A/µs
T2− G− -50A/µs
T2− G+ - 10 A/µs
peak gate current - 2 A
peak gate voltage - 5 V
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthetriacmayswitch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
9397 750 13437 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 23 September 2004 2 of 12
Philips Semiconductors
BT139 series E
Triacs; sensitive gate
25
P
tot
(W)
20
15
10
5
0
0 2015105
α = conduction angle.
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
160
I
TSM
(A)
120
80
α =
180
120
90
60
30
I
T(RMS)
I
T
T
j(initial)
001aab093
α
α
(A)
001aab102
I
TSM
T
= 25 °C max
95
T
mb(max)
(°C)
101
107
113
119
125
t
40
0
1 10
10
2
10
n
3
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;
maximum values.
9397 750 13437 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 23 September 2004 3 of 12
Philips Semiconductors
BT139 series E
Triacs; sensitive gate
3
10
I
TSM
(A)
2
10
10
−2
10
(1)
(2)
T
−1
1
1010
tp≤ 20 ms.
(1) dIT/dt limit.
(2) T2− G+ quadrant.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
I
T(RMS)
(A)
50
40
001aab090
I
T(RMS)
(A)
20
15
I
T
j(initial)
T (ms)
001aab092
I
TSM
T
= 25 °C max
001aab091
(1)
t
2
10
30
20
10
0
−2
10
−1
surge duration (s)
10110
f = 50 Hz; Tmb≤ 99 °C. (1) Tmb = 99 °C.
Fig 4. RMS on-state current as a function of surge
duration; maximum values.
10
5
0
−50 150100050
Tmb (°C)
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values.
9397 750 13437 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 03 — 23 September 2004 4 of 12
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