NXP BT 139/800E Datasheet

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Page 1

BT139 series E

Triacs; sensitive gate

Rev. 03 — 23 September 2004 Product data sheet

1. Product proﬁle

1.1 General description

Passivated, sensitive gate triacs in a SOT78 (TO-220AB) plastic package.

1.2 Features

■ High sensitivity in all four quadrants.

1.3 Applications

■ General purpose bidirectional switching ■ Phase control.

1.4 Quick reference data

■ V

■ I

≤ 600 V (BT139-600E) ■ I

DRM

≤ 800 V (BT139-800E) ■ IGT≤ 10 mA (T2+ G+; T2+ G−; T2− G−)

DRM

≤ 16 A ■ IGT≤ 25 mA (T2− G+).

T(RMS)

TSM

≤ 155 A

2. Pinning information

Table 1: Pinning

Pin Description Simpliﬁed outline Symbol

1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base, connected to main

terminal 2 (T2)

12mb3

SOT78 (TO-220AB)

sym051

T1 G

Page 2

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BT139-600E SC-46 plastic single-ended package; heatsink mounted; 1 mounting hole; BT139-800E

3-lead TO-220AB

SOT78

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DRM

T(RMS)

TSM

/dt repetitive rate of rise of on-state

G(AV)

stg

repetitive peak off-state voltage

[1]

BT139-600E

- 600 V

BT139-800E - 800 V

RMS on-state current full sinewave;

≤ 99 °C; Figure 4

and

Figure 5

-16A

non-repetitive peak on-state current full sine wave;

=25°C prior to

surge;

Figure 2 and

Figure 3

t = 20 ms - 155 A t = 16.7 ms - 170 A

t for fusing t = 10 ms - 120 A2s

ITM= 20 A; IG= 0.2 A;

current after triggering

/dt = 0.2 A/µs

T2+ G+ - 50 A/µs T2+ G− -50A/µs T2− G− -50A/µs

T2− G+ - 10 A/µs peak gate current - 2 A peak gate voltage - 5 V peak gate power - 5 W average gate power over any 20 ms period - 0.5 W storage temperature −40 +150 °C junction temperature - 125 °C

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthetriacmayswitch to the on-state. The

rate of rise of current should not exceed 15 A/µs.

Product data sheet Rev. 03 — 23 September 2004 2 of 12

Page 3

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

tot

(W)

0 2015105

α = conduction angle.

Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.

160

TSM

(A)

120

α = 180

120 90

T(RMS)

j(initial)

001aab093

(A)

001aab102

TSM

= 25 °C max

95 T

mb(max)

(°C)

101

107

113

119

125

1 10

f = 50 Hz.

Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;

maximum values.

Product data sheet Rev. 03 — 23 September 2004 3 of 12

Page 4

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

TSM

(A)

−2

(1)

(2)

−1

1010

tp≤ 20 ms. (1) dIT/dt limit. (2) T2− G+ quadrant.

Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.

T(RMS)

(A)

001aab090

T(RMS)

(A)

j(initial)

T (ms)

001aab092

TSM

= 25 °C max

001aab091

(1)

−2

−1

surge duration (s)

10110

f = 50 Hz; Tmb≤ 99 °C. (1) Tmb = 99 °C.

Fig 4. RMS on-state current as a function of surge

duration; maximum values.

−50 150100050 Tmb (°C)

Fig 5. RMS on-state current as a function of mounting

base temperature; maximum values.

Product data sheet Rev. 03 — 23 September 2004 4 of 12

Page 5

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

th(j-a)

thermal resistance from junction to mounting base

thermal resistance from junction to ambient

full cycle; Figure 6 - - 1.2 K/W half cycle;

Figure 6 - - 1.7 K/W

in free air - 60 - K/W

th(j-mb)

(K/W)

−1

−2

−3

−5

−4

−3

−2

(1) Unidirectional. (2) Bidirectional.

Fig 6. Transient thermal impedance as a function of pulse width.

001aab098

(1)

(2)

−1

11010

tp (s)

Product data sheet Rev. 03 — 23 September 2004 5 of 12

Page 6

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

Dynamic characteristics

/dt critical rate of rise of

gate trigger current VD= 12 V; IT= 0.1 A; Figure 8

T2+ G+ - 2.5 10 mA T2+ G− - 4 10 mA T2− G− - 5 10 mA T2− G+ - 1125mA

latching current VD= 12 V; IGT= 0.1 A;

Figure 10

T2+ G+ - 3.2 30 mA T2+ G− - 1640mA T2− G− - 4 30 mA T2− G+ - 5.5 40 mA

holding current VD= 12 V; IGT= 0.1 A;

- 4 45 mA

Figure 11

on-state voltage IT=20A;Figure 9 - 1.2 1.6 V gate trigger voltage VD= 12 V; IT= 0.1 A; Figure 7 - 0.7 1.5 V

off-state leakage

= 400 V; IT= 0.1 A;

= 125 °C

VD=V

DRM(max)

; Tj= 125 °C - 0.1 0.5 mA

0.25 0.4 - V

current

off-state voltage

VDM=67% V

= 125 °C; exponential

DRM(max)

;

-50-V/µs

waveform; gate open circuit gate controlled

turn-on time

ITM= 20 A; VD=V

= 0.1 A; dIG/dt = 5 A/µs

DRM(max)

;

-2-µs

Product data sheet Rev. 03 — 23 September 2004 6 of 12

Page 7

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

1.6

GT(Tj)

GT(25°C)

1.2

0.8

0.4

−50 150100050

001aab101

Tj (°C)

Fig 7. Normalized gate trigger voltage as a function of

junction temperature.

)

GT(Tj

GT(25°C)

(1)

(2)

−50 150100050

(3)

(4)

001aab448

Tj (°C)

(1) T2− G+. (2) T2+ G−. (3) T2− G−. (4) T2+ G+.

Fig 8. Normalized gate trigger current as a function of

junction temperature.

(A)

0321

(1) (3)(2)

001aab094

VT (V)

L(Tj)

L(25°C)

−50 150100050

001aab100

Tj (°C)

VO= 1.195 V.

Rs= 0.018 Ω. (1) Tj= 125 °C; typical values. (2) Tj=25°C; maximum values. (3) Tj= 125 °C; maximum values.

Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of

junction temperature.

Product data sheet Rev. 03 — 23 September 2004 7 of 12

Page 8

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

H(Tj)

H(25°C)

−50 150100050

001aab099

Tj (°C)

Fig 11. Normalized holding current as a function of

junction temperature.

dVD/dt

(V/µs)

0 15010050

001aab452

(°C)

Fig 12. Critical rate of rise of off-state voltage as a

function of junction temperature; minimum values.

Product data sheet Rev. 03 — 23 September 2004 8 of 12

Page 9

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

7. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

(1)

mounting

base

123

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

4.5

4.1

1.39

1.27

UNIT

Note

1. Terminals in this zone are not tinned.

OUTLINE

VERSION

SOT78 SC-463-lead TO-220AB

1.3

1.0

0.7

0.4

0.9

0.6

IEC JEDEC JEITA

15.8

6.4

15.2

5.9

REFERENCES

10.3

9.7

2.54

15.0

13.5

3.30

2.79

max.

3.0

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

01-02-16 03-01-22

Fig 13. Package outline; SOT78 (TO-220AB).

Product data sheet Rev. 03 — 23 September 2004 9 of 12

Page 10

Philips Semiconductors

BT139 series E

Triacs; sensitive gate

8. Revision history

Table 6: Revision history

Document ID Release

date

BT139_SERIES_E_3 20040923 Product data sheet - 9397 750 13437 BT139_SERIES_E_2 Modiﬁcations:

BT139_SERIES_E_2 20010701 Product speciﬁcation - - BT139_SERIES_E_1 BT139_SERIES_E_1 19971001 Product speciﬁcation - - -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors.

Data sheet status Change notice Doc. number Supersedes

Product data sheet Rev. 03 — 23 September 2004 10 of 12

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Philips Semiconductors

9. Data sheet status

BT139 series E

Triacs; sensitive gate

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This datasheet contains data fromthe preliminary speciﬁcation. Supplementary datawill be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty thatsuchapplications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a laterdate. Philips Semiconductors reserves the right to changethe speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes atany time in order to improve thedesign, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes norepresentations or warrantiesthat these productsare free frompatent, copyright, or maskwork right infringement, unless otherwise speciﬁed.

12. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Product data sheet Rev. 03 — 23 September 2004 11 of 12

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Philips Semiconductors

13. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

10 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information . . . . . . . . . . . . . . . . . . . . 11

BT139 series E

Triacs; sensitive gate

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 23 September 2004

Document number: 9397 750 13437