NXP BT 139/500, BT 139-600 NXP Datasheet

Philips Semiconductors Product specification

Triacs BT139 series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT
intendedforuseinapplicationsrequiring
high bidirectional transient and blocking BT139- 600 800
voltage capability and high thermal BT139- 600F 800F
cycling performance. Typical BT139- 800G
applications include motor control, V
industrial and domestic lighting, heating voltages
and static switching. I

DRM

T(RMS)

I

TSM

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Repetitive peak off-state 600 800 V
RMS on-state current 16 16 A

Non-repetitive peak on-state 140 140 A
current

PIN DESCRIPTION

tab

1 main terminal 1
2 main terminal 2
3 gate

tab main terminal 2

123

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-600 -800

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 600
voltages

RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 16 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge

t = 20 ms - 140 A

I2tI

2

t for fusing t = 10 ms - 98 A2s

t = 16.7 ms - 150 A

dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs

I
V
P
P
T
T

GM

GM
GM

G(AV)
stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs

1

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

July 2001 1 Rev 1.400

Philips Semiconductors Product specification

Triacs BT139 series

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

I

D

Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient

BT139- ... ...F ...G

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 10 35 25 50 mA
T2- G+ - 22 70 70 100 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 7 40 40 60 mA
T2+ G- - 20 60 60 90 mA
T2- G- - 8 40 40 60 mA
T2- G+ - 10 60 60 90 mA

Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA
On-state voltage IT = 20 A - 1.2 1.6 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C

Off-state leakage current VD = V

Tj = 125 ˚C

; - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BT139- ... ...F ...G

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage Tj = 125 ˚C; exponential

waveform; gate open
circuit

dV

/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µs

com

t

gt

commutating voltage I

= 16 A;

T(RMS)

dI

/dt = 7.2 A/ms; gate

com

open circuit
Gate controlled turn-on ITM = 20 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs

; 100 50 200 250 - V/µs

DRM(max)

;- - - 2 - µs

DRM(max)

July 2001 2 Rev 1.400

Philips Semiconductors Product specification

Triacs BT139 series

Ptot / W

25

20

15

10

5

0

0 5 10 15 20

1

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

100

T2- G+ quadrant

10

10us 100us 1ms 10ms 100ms

, where α = conduction angle.

T(RMS)

dI /dt limit

T

I

T

T / s

Tmb(max) / C

= 180

120

90

60

30

, versus rms

tot

I

TSM

time

T

Tj initial = 25 C max

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

, versus pulse width tp, for

TSM

95

101

107

113

119

125

IT(RMS) / A

20

15

10

5

0

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus mounting base temperature Tmb.

IT(RMS) / A

50

40

30

20

10

0

0.01 0.1 1 10

BT139

Tmb / C

surge duration / s

99 C

T(RMS)

,

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 99˚C.

ITSM / A

150

I

I

T

100

50

0

1 10 100 1000

Number of cycles at 50Hz

Tj initial = 25 C max

TSM

T

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150
Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

July 2001 3 Rev 1.400

Philips Semiconductors Product specification

Triacs BT139 series

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

T2+ G+
T2+ G­T2- G­T2- G+

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)

IL(25 C)

3

2.5

2

1.5

1

0.5

IT / A

50

Tj = 125 C

Tj = 25 C

40

Vo = 1.195 V
Rs = 0.018 Ohms

30

20

10

0

0 0.5 1 1.5 2 2.5 3

typ max

VT / V

Fig.10. Typical and maximum on-state characteristic.

Zth j-mb (K/W)

10

1

0.1

0.01

unidirectional

bidirectional

t

P

p

D

t

0

-50 0 50 100 150
Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature Tj.

IH(Tj)

IH(25C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature Tj.

0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

dV/dt (V/us)

1000

100

dIcom/dt =

20 A/ms

10

1

0 50 100 150

tp / s

pulse width tp.

16

9.3

12 7.2

Tj / C

th j-mb

off-state dV/dt limit

BT139...G SERIES

BT139 SERIES

BT139...F SERIES

5.6

, versus

Fig.12. Typical commutation dV/dt versus junction

temperature, parameter commutation dIT/dt. The triac

should commutate when the dV/dt is below the value

on the appropriate curve for pre-commutation dIT/dt.

July 2001 4 Rev 1.400

Philips Semiconductors Product specification

Triacs BT139 series

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

July 2001 5 Rev 1.400

Philips Semiconductors Product specification

Triacs BT139 series

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

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consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

2

STATUS

3

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

July 2001 6 Rev 1.400